Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IAUZ40N06S5L050ATMA1

IAUZ40N06S5L050ATMA1

MOSFET_)40V 60V) PG-TSDSON-8

Infineon Technologies
3,199 -

RFQ

IAUZ40N06S5L050ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 60 V 90A (Tj) 4.5V, 10V 5mOhm @ 20A, 10V 2.2V @ 29µA 36.7 nC @ 10 V ±16V 2500 pF @ 30 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI80N04S3-04

IPI80N04S3-04

N-CHANNEL POWER MOSFET

Infineon Technologies
2,318 -

RFQ

IPI80N04S3-04

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
IPB45N06S4L08ATMA3

IPB45N06S4L08ATMA3

MOSFET N-CH 60V 45A TO263-3

Infineon Technologies
3,924 -

RFQ

IPB45N06S4L08ATMA3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS®-T2 Active N-Channel MOSFET (Metal Oxide) 60 V 45A (Tc) 4.5V, 10V 7.9mOhm @ 45A, 10V 2.2V @ 35µA 64 nC @ 10 V ±16V 4780 pF @ 25 V - 71W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IP165R660CFD

IP165R660CFD

N-CHANNEL POWER MOSFET

Infineon Technologies
2,393 -

RFQ

IP165R660CFD

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
BSC016N03LSGATMA1

BSC016N03LSGATMA1

MOSFET N-CH 30V 32A/100A TDSON

Infineon Technologies
2,227 -

RFQ

BSC016N03LSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Not For New Designs N-Channel MOSFET (Metal Oxide) 30 V 32A (Ta), 100A (Tc) 4.5V, 10V 1.6mOhm @ 30A, 10V 2.2V @ 250µA 131 nC @ 10 V ±20V 10000 pF @ 15 V - 2.5W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRL530NSTRRPBF

IRL530NSTRRPBF

MOSFET N-CH 100V 17A D2PAK

Infineon Technologies
2,257 -

RFQ

IRL530NSTRRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Not For New Designs N-Channel MOSFET (Metal Oxide) 100 V 17A (Tc) 4V, 10V 100mOhm @ 9A, 10V 2V @ 250µA 34 nC @ 5 V ±20V 800 pF @ 25 V - 3.8W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ISZ080N10NM6ATMA1

ISZ080N10NM6ATMA1

TRENCH >=100V PG-TSDSON-8

Infineon Technologies
2,322 -

RFQ

ISZ080N10NM6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 13A (Ta), 75A (Tc) 8V, 10V 8.04mOhm @ 20A, 10V 3.3V @ 36µA 24 nC @ 10 V ±20V 1800 pF @ 50 V - 3W (Ta), 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD70P04P4L08ATMA1

IPD70P04P4L08ATMA1

MOSFET P-CH 40V 70A TO252-3

Infineon Technologies
2,295 -

RFQ

IPD70P04P4L08ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Not For New Designs P-Channel MOSFET (Metal Oxide) 40 V 70A (Tc) 4.5V, 10V 7.8mOhm @ 70A, 10V 2.2V @ 120µA 92 nC @ 10 V ±16V 5430 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD70P04P409ATMA2

IPD70P04P409ATMA2

MOSFET P-CH 40V 73A TO252-3

Infineon Technologies
2,702 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 40 V 73A (Tc) - 8.9mOhm @ 70A, 10V 4V @ 120µA 70 nC @ 10 V ±20V 4810 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPLK80R750P7ATMA1

IPLK80R750P7ATMA1

MOSFET 800V TDSON-8

Infineon Technologies
2,624 -

RFQ

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active - MOSFET (Metal Oxide) 800 V - - - - - - - - - - Surface Mount
IRFB812PBF

IRFB812PBF

MOSFET N CH 500V 3.6A TO220AB

Infineon Technologies
2,387 -

RFQ

IRFB812PBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 5V @ 250µA 20 nC @ 10 V ±20V 810 pF @ 25 V - 78W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI4410ZGPBF

IRFI4410ZGPBF

MOSFET N-CH 100V 43A TO220AB FP

Infineon Technologies
2,293 -

RFQ

IRFI4410ZGPBF

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 43A (Tc) 10V 9.3mOhm @ 26A, 10V 4V @ 150µA 110 nC @ 10 V ±30V 4910 pF @ 50 V - 47W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRLH6224TR2PBF

IRLH6224TR2PBF

MOSFET N CH 20V 28A PQFN 5X6 MM

Infineon Technologies
2,302 -

RFQ

IRLH6224TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 28A (Ta), 105A (Tc) - 3mOhm @ 20A, 4.5V 1.1V @ 50µA 86 nC @ 10 V - 3710 pF @ 10 V - - - Surface Mount
IRF6811STR1PBF

IRF6811STR1PBF

MOSFET N CH 25V 19A DIRECTFET

Infineon Technologies
2,630 -

RFQ

IRF6811STR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 19A (Ta), 74A (Tc) 4.5V, 10V 3.7mOhm @ 19A, 10V 2.1V @ 35µA 17 nC @ 4.5 V ±16V 1590 pF @ 13 V - 2.1W (Ta), 32W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6894MTR1PBF

IRF6894MTR1PBF

MOSFET N-CH 25V 32A DIRECTFET

Infineon Technologies
2,245 -

RFQ

IRF6894MTR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 32A (Ta), 160A (Tc) 4.5V, 10V 1.3mOhm @ 33A, 10V 2.1V @ 100µA 39 nC @ 4.5 V ±16V 4160 pF @ 13 V Schottky Diode (Body) 2.1W (Ta), 54W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6898MTR1PBF

IRF6898MTR1PBF

MOSFET N-CH 25V 35A DIRECTFET

Infineon Technologies
3,333 -

RFQ

IRF6898MTR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 35A (Ta), 213A (Tc) 4.5V, 10V 1.1mOhm @ 35A, 10V 2.1V @ 100µA 62 nC @ 4.5 V ±16V 5435 pF @ 13 V Schottky Diode (Body) 2.1W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF8306MTR1PBF

IRF8306MTR1PBF

MOSFET N-CH 30V 23A DIRECTFET

Infineon Technologies
3,931 -

RFQ

IRF8306MTR1PBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta), 140A (Tc) 4.5V, 10V 2.5mOhm @ 23A, 10V 2.35V @ 100µA 38 nC @ 4.5 V ±20V 4110 pF @ 15 V Schottky Diode (Body) 2.1W (Ta), 75W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IPD11DP10NMATMA1

IPD11DP10NMATMA1

TRENCH >=100V PG-TO252-3

Infineon Technologies
2,844 -

RFQ

IPD11DP10NMATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 100 V 3.4A (Ta), 22A (Tc) 10V 111mOhm @ 18A, 10V 4V @ 1.7mA 74 nC @ 10 V ±20V 3200 pF @ 50 V - 3W (Ta), 125W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPI80N03S4L-04

IPI80N03S4L-04

N-CHANNEL POWER MOSFET

Infineon Technologies
3,449 -

RFQ

IPI80N03S4L-04

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPB049N06L3G

IPB049N06L3G

N-CHANNEL POWER MOSFET

Infineon Technologies
3,226 -

RFQ

IPB049N06L3G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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