Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IPP60R520E6

IPP60R520E6

N-CHANNEL POWER MOSFET

Infineon Technologies
3,410 -

RFQ

IPP60R520E6

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 8.1A (Tc) 10V 520mOhm @ 2.8A, 10V 3.5V @ 230µA 23.4 nC @ 10 V ±20V 512 pF @ 100 V - 66W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPB04N60C3

SPB04N60C3

N-CHANNEL POWER MOSFET

Infineon Technologies
2,198 -

RFQ

SPB04N60C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 4.5A (Tc) 10V 950mOhm @ 2.8A, 10V 3.9V @ 200µA 25 nC @ 10 V ±20V 490 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SPD50N03S2L-06G

SPD50N03S2L-06G

N-CHANNEL POWER MOSFET

Infineon Technologies
2,054 -

RFQ

SPD50N03S2L-06G

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPP084N06L3GXK

IPP084N06L3GXK

N-CHANNEL POWER MOSFET

Infineon Technologies
3,544 -

RFQ

IPP084N06L3GXK

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 50A (Tc) 4.5V, 10V 8.4mOhm @ 50A, 10V 2.2V @ 34µA 29 nC @ 4.5 V ±20V 4900 pF @ 30 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IPP60R450E6

IPP60R450E6

N-CHANNEL POWER MOSFET

Infineon Technologies
3,657 -

RFQ

IPP60R450E6

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 9.2A (Tc) 10V 450mOhm @ 3.4A, 10V 3.5V @ 280µA 28 nC @ 10 V ±20V 620 pF @ 100 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPA08N50C3XK

SPA08N50C3XK

N-CHANNEL POWER MOSFET

Infineon Technologies
3,131 -

RFQ

SPA08N50C3XK

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 560 V 7.6A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 32 nC @ 10 V ±20V 750 pF @ 25 V - 32W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPI08N50C3

SPI08N50C3

N-CHANNEL POWER MOSFET

Infineon Technologies
2,256 -

RFQ

SPI08N50C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 560 V 7.6A (Tc) 10V 600mOhm @ 4.6A, 10V 3.9V @ 350µA 32 nC @ 10 V ±20V 750 pF @ 25 V - 83W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPI08N50C3IN

SPI08N50C3IN

N-CHANNEL POWER MOSFET

Infineon Technologies
3,711 -

RFQ

SPI08N50C3IN

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPI07N60S5IN

SPI07N60S5IN

N-CHANNEL POWER MOSFET

Infineon Technologies
2,529 -

RFQ

SPI07N60S5IN

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
SPP06N60C3

SPP06N60C3

N-CHANNEL POWER MOSFET

Infineon Technologies
3,972 -

RFQ

SPP06N60C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 750mOhm @ 3.9A, 10V 3.9V @ 260µA 31 nC @ 10 V ±20V 620 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
SPPO4N80C3

SPPO4N80C3

N-CHANNEL POWER MOSFET

Infineon Technologies
3,033 -

RFQ

SPPO4N80C3

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 800 V 4A (Tc) 10V 1.3Ohm @ 2.5A, 10V 3.9V @ 240µA 31 nC @ 10 V ±20V 570 pF @ 100 V - 63W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFR812PBF

IRFR812PBF

MOSFET N-CH 500V 3.6A DPAK

Infineon Technologies
2,221 -

RFQ

IRFR812PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 500 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 5V @ 250µA 20 nC @ 10 V ±20V 810 pF @ 25 V - 78W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR825PBF

IRFR825PBF

MOSFET N-CH 500V 6A DPAK

Infineon Technologies
3,956 -

RFQ

IRFR825PBF

Ficha técnica

Tube HEXFET® Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 500 V 6A (Tc) 10V 1.3Ohm @ 3.7A, 10V 5V @ 250µA 34 nC @ 10 V ±20V 1346 pF @ 25 V - 119W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLH7134TRPBF

IRLH7134TRPBF

MOSFET N-CH 40V 26A/85A 8PQFN

Infineon Technologies
3,117 -

RFQ

IRLH7134TRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 26A (Ta), 85A (Tc) 4.5V, 10V 3.3mOhm @ 50A, 10V 2.5V @ 100µA 58 nC @ 4.5 V ±16V 3720 pF @ 25 V - 3.6W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRLH7134TR2PBF

IRLH7134TR2PBF

MOSFET N-CH 40V 26A 8PQFN

Infineon Technologies
3,715 -

RFQ

IRLH7134TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 40 V 26A (Ta), 85A (Tc) - 3.3mOhm @ 50A, 10V 2.5V @ 100µA 58 nC @ 4.5 V - 3720 pF @ 25 V - - - Surface Mount
IRFH7107TRPBF

IRFH7107TRPBF

MOSFET N-CH 75V 14A/75A 8PQFN

Infineon Technologies
3,228 -

RFQ

IRFH7107TRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 75 V 14A (Ta), 75A (Tc) 10V 8.5mOhm @ 45A, 10V 4V @ 100µA 72 nC @ 10 V ±20V 3110 pF @ 25 V - 3.6W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFH7107TR2PBF

IRFH7107TR2PBF

MOSFET N-CH 75V 14A 8PQFN

Infineon Technologies
2,992 -

RFQ

IRFH7107TR2PBF

Ficha técnica

Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 75 V 14A (Ta), 75A (Tc) - 8.5mOhm @ 45A, 10V 4V @ 100µA 72 nC @ 10 V - 3110 pF @ 25 V - - - Surface Mount
BSC205N10LS G

BSC205N10LS G

MOSFET N-CH 100V 7.4A/45A TDSON

Infineon Technologies
3,400 -

RFQ

BSC205N10LS G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 100 V 7.4A (Ta), 45A (Tc) 4.5V, 10V 20.5mOhm @ 45A, 10V 2.4V @ 43µA 41 nC @ 10 V ±20V 2900 pF @ 50 V - 76W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC240N12NS3 G

BSC240N12NS3 G

MOSFET N-CH 120V 37A TDSON-8-1

Infineon Technologies
714 -

RFQ

BSC240N12NS3 G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 120 V 37A (Tc) 10V 24mOhm @ 31A, 10V 4V @ 35µA 27 nC @ 10 V ±20V 1900 pF @ 60 V - 66W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSC882N03MSGATMA1

BSC882N03MSGATMA1

MOSFET N-CH 34V 22A/100A TDSON

Infineon Technologies
35,000 -

RFQ

BSC882N03MSGATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 34 V 22A (Ta), 100A (Tc) 4.5V, 10V 2.6mOhm @ 30A, 10V 2V @ 250µA 55 nC @ 10 V ±20V 4300 pF @ 15 V - 2.5W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1500+ Média diária de RFQ
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1800+ Fabricantes em todo o mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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