Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IAUC100N04S6N015ATMA1

IAUC100N04S6N015ATMA1

IAUC100N04S6N015ATMA1

Infineon Technologies
2,848 -

RFQ

IAUC100N04S6N015ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 7V, 10V 1.55mOhm @ 50A, 10V 3V @ 50µA 55 nC @ 10 V ±20V 3470 pF @ 25 V - 100W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPLK80R1K4P7ATMA1

IPLK80R1K4P7ATMA1

MOSFET 800V TDSON-8

Infineon Technologies
2,784 -

RFQ

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active - MOSFET (Metal Oxide) 800 V - - - - - - - - - - Surface Mount
IPLK70R600P7ATMA1

IPLK70R600P7ATMA1

MOSFET N-CH 700V TDSON-8

Infineon Technologies
3,335 -

RFQ

IPLK70R600P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V - - - - - - - - - - Surface Mount
ISZ0804NLSATMA1

ISZ0804NLSATMA1

MOSFET N-CH 100V 11A/58A TSDSON

Infineon Technologies
2,554 -

RFQ

ISZ0804NLSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 11A (Ta), 58A (Tc) 4.5V, 10V 11.5mOhm @ 20A, 10V 2.3V @ 28µA 24 nC @ 10 V ±20V 1600 pF @ 50 V - 2.1W (Ta), 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPD19DP10NMATMA1

IPD19DP10NMATMA1

TRENCH >=100V PG-TO252-3

Infineon Technologies
3,407 -

RFQ

IPD19DP10NMATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 100 V 2.6A (Ta), 13.7A (Tc) 10V 186mOhm @ 12A, 10V 4V @ 1.04mA 45 nC @ 10 V ±20V 2000 pF @ 50 V - 3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD18DP10LMATMA1

IPD18DP10LMATMA1

TRENCH >=100V PG-TO252-3

Infineon Technologies
2,437 -

RFQ

IPD18DP10LMATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active P-Channel MOSFET (Metal Oxide) 100 V 2.5A (Ta), 13.9A (Tc) 4.5V, 10V 178mOhm @ 13A, 10V 2V @ 1.04mA 42 nC @ 10 V ±20V 2100 pF @ 50 V - 3W (Ta), 83W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD90N04S403ATMA1

IPD90N04S403ATMA1

MOSFET N-CH 40V 90A TO252-3

Infineon Technologies
2,494 -

RFQ

IPD90N04S403ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 90A (Tc) 10V 3.2mOhm @ 90A, 10V 4V @ 53µA 66.8 nC @ 10 V ±20V 5260 pF @ 25 V - 94W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD50P03P4L11ATMA2

IPD50P03P4L11ATMA2

MOSFET P-CH 30V 50A TO252-31

Infineon Technologies
3,337 -

RFQ

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS®-P2 Active P-Channel MOSFET (Metal Oxide) 30 V 50A (Tc) - 10.5mOhm @ 50A, 10V 2V @ 85µA 55 nC @ 10 V +5V, -16V 3770 pF @ 25 V - 58W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPLK80R1K2P7ATMA1

IPLK80R1K2P7ATMA1

MOSFET 800V TDSON-8

Infineon Technologies
3,506 -

RFQ

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active - MOSFET (Metal Oxide) 800 V - - - - - - - - - - Surface Mount
ISK036N03LM5AULA1

ISK036N03LM5AULA1

TRENCH <= 40V PG-VSON-6

Infineon Technologies
2,322 -

RFQ

Tape & Reel (TR),Cut Tape (CT) * Active - - - - - - - - - - - - - -
ISC0603NLSATMA1

ISC0603NLSATMA1

MOSFET N-CH 80V 12.3A/56A TDSON

Infineon Technologies
2,124 -

RFQ

ISC0603NLSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 80 V 12.3A (Ta), 56A (Tc) 4.5V, 10V 8.9mOhm @ 20A, 10V 2.3V @ 24µA 24 nC @ 10 V ±20V 1600 pF @ 40 V - 2.5W (Ta), 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF8306MTRPBF

IRF8306MTRPBF

MOSFET N-CH 30V 23A DIRECTFET

Infineon Technologies
9,600 -

RFQ

IRF8306MTRPBF

Ficha técnica

Tape & Reel (TR),Bulk HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 23A (Ta), 140A (Tc) 4.5V, 10V 2.5mOhm @ 23A, 10V 2.35V @ 100µA 38 nC @ 4.5 V ±20V 4110 pF @ 15 V Schottky Diode (Body) 2.1W (Ta), 75W (Tc) -40°C ~ 150°C (TJ) Surface Mount
IRF6898MTRPBF

IRF6898MTRPBF

MOSFET N-CH 25V 35A DIRECTFET

Infineon Technologies
2,766 -

RFQ

IRF6898MTRPBF

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 25 V 35A (Ta), 213A (Tc) 4.5V, 10V 1.1mOhm @ 35A, 10V 2.1V @ 100µA 62 nC @ 4.5 V ±16V 5435 pF @ 13 V Schottky Diode (Body) 2.1W (Ta), 78W (Tc) -40°C ~ 150°C (TJ) Surface Mount
SPA06N60C3IN

SPA06N60C3IN

N-CHANNEL POWER MOSFET

Infineon Technologies
3,763 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BSC014NE2LSIATMA1

BSC014NE2LSIATMA1

MOSFET N-CH 25V 33A/100A TDSON

Infineon Technologies
10,000 -

RFQ

BSC014NE2LSIATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 33A (Ta), 100A (Tc) 4.5V, 10V 1.4mOhm @ 30A, 10V 2V @ 250µA 39 nC @ 10 V ±20V 2700 pF @ 12 V - 2.5W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ISC0602NLSATMA1

ISC0602NLSATMA1

MOSFET N-CH 80V 14A/66A TDSON-8

Infineon Technologies
2,165 -

RFQ

ISC0602NLSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 80 V 14A (Ta), 66A (Tc) 4.5V, 10V 7.3mOhm @ 20A, 10V 2.3V @ 29µA 22 nC @ 10 V ±20V 1800 pF @ 40 V - 2.5W (Ta), 60W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IPLK80R900P7ATMA1

IPLK80R900P7ATMA1

MOSFET 800V TDSON-8

Infineon Technologies
2,175 -

RFQ

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active - MOSFET (Metal Oxide) 800 V - - - - - - - - - - Surface Mount
BSZ039N06NSATMA1

BSZ039N06NSATMA1

MOSFET N-CH 60V 18A/40A TSDSON

Infineon Technologies
2,048 -

RFQ

BSZ039N06NSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 60 V 18A (Ta), 40A (Tc) 6V, 10V 3.9mOhm @ 20A, 10V 3.3V @ 36µA 34 nC @ 10 V ±20V 2500 pF @ 30 V - 2.1W (Ta), 69W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFR1010ZTRPBF

IRFR1010ZTRPBF

MOSFET N-CH 55V 42A DPAK

Infineon Technologies
2,064 -

RFQ

IRFR1010ZTRPBF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) HEXFET® Active N-Channel MOSFET (Metal Oxide) 55 V 42A (Tc) 10V 7.5mOhm @ 42A, 10V 4V @ 100µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
BSZ017NE2LS5IATMA1

BSZ017NE2LS5IATMA1

MOSFET N-CH 25V 27A/40A TSDSON

Infineon Technologies
3,889 -

RFQ

BSZ017NE2LS5IATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT),Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 25 V 27A (Ta), 40A (Tc) 4.5V, 10V 1.7mOhm @ 20A, 10V 2V @ 250µA 30 nC @ 10 V ±16V 2000 pF @ 12 V - 2.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
Total 8399 Record«Prev1... 226227228229230231232233...420Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário