Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SPB02N60S5

SPB02N60S5

N-CHANNEL POWER MOSFET

Infineon Technologies
2,326 -

RFQ

SPB02N60S5

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IAUC100N04S6N022ATMA1

IAUC100N04S6N022ATMA1

IAUC100N04S6N022ATMA1

Infineon Technologies
3,045 -

RFQ

IAUC100N04S6N022ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 100A (Tc) 7V, 10V 2.26mOhm @ 50A, 10V 3V @ 32µA 39 nC @ 10 V ±20V 2421 pF @ 25 V - 75W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPLK70R1K2P7ATMA1

IPLK70R1K2P7ATMA1

MOSFET N-CH 700V TDSON-8

Infineon Technologies
3,166 -

RFQ

IPLK70R1K2P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V - - - - - - - - - - Surface Mount
BUZ73AE3046

BUZ73AE3046

N-CHANNEL POWER MOSFET

Infineon Technologies
2,447 -

RFQ

BUZ73AE3046

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IPLK70R900P7ATMA1

IPLK70R900P7ATMA1

MOSFET N-CH 700V TDSON-8

Infineon Technologies
2,578 -

RFQ

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V - - - - - - - - - - Surface Mount
IRFR7746PBF-INF

IRFR7746PBF-INF

MOSFET N-CH 75V 56A DPAK

Infineon Technologies
3,056 -

RFQ

IRFR7746PBF-INF

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 75 V 56A (Tc) - 11.2mOhm @ 35A, 10V 3.7V @ 100µA 89 nC @ 10 V ±20V 3107 pF @ 25 V - 99W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ISZ230N10NM6ATMA1

ISZ230N10NM6ATMA1

TRENCH >=100V PG-TSDSON-8

Infineon Technologies
3,960 -

RFQ

ISZ230N10NM6ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 7.7A (Ta), 31A (Tc) 8V, 10V 23mOhm @ 10A, 10V 3.3V @ 13µA 9.3 nC @ 10 V ±20V 690 pF @ 50 V - 3W (Ta), 48W (Tc) -55°C ~ 175°C (TJ) Surface Mount
ISC0803NLSATMA1

ISC0803NLSATMA1

MOSFET N-CH 100V 8.8A/37A 8TDSON

Infineon Technologies
3,341 -

RFQ

ISC0803NLSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 100 V 8.8A (Ta), 37A (Tc) 4.5V, 10V 16.9mOhm @ 20A, 10V 2.3V @ 18µA 15 nC @ 10 V ±20V 1000 pF @ 50 V - 2.5W (Ta), 43W (Tc) -55°C ~ 150°C (TJ) Surface Mount
ISZ0702NLSATMA1

ISZ0702NLSATMA1

MOSFET N-CH 60V 17A/86A TSDSON

Infineon Technologies
2,035 -

RFQ

ISZ0702NLSATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) OptiMOS™ 5 Active N-Channel MOSFET (Metal Oxide) 60 V 17A (Ta), 86A (Tc) 4.5V, 10V 4.5mOhm @ 20A, 10V 2.3V @ 26µA 39 nC @ 10 V ±20V 2500 pF @ 30 V - 2.5W (Ta), 65W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IAUC41N06S5N102ATMA1

IAUC41N06S5N102ATMA1

MOSFET_)40V 60V) PG-TDSON-8

Infineon Technologies
2,171 -

RFQ

IAUC41N06S5N102ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, OptiMOS™-5 Active N-Channel MOSFET (Metal Oxide) 60 V 47A (Tj) 7V, 10V 10.2mOhm @ 20A, 10V 3.4V @ 13µA 16.3 nC @ 10 V ±20V 1112.1 pF @ 30 V - 42W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPLK80R2K0P7ATMA1

IPLK80R2K0P7ATMA1

MOSFET 800V TDSON-8

Infineon Technologies
3,230 -

RFQ

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active - MOSFET (Metal Oxide) 800 V - - - - - - - - - - Surface Mount
IPB45N04S4L08ATMA1

IPB45N04S4L08ATMA1

MOSFET N-CH 40V 45A TO263-3-2

Infineon Technologies
3,088 -

RFQ

IPB45N04S4L08ATMA1

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 40 V 45A (Tc) 4.5V, 10V 7.6mOhm @ 45A, 10V 2.2V @ 17µA 30 nC @ 10 V +20V, -16V 2340 pF @ 25 V - 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD100N06S403ATMA1

IPD100N06S403ATMA1

MOSFET N-CH 60V 100A TO252-3-11

Infineon Technologies
3,446 -

RFQ

IPD100N06S403ATMA1

Ficha técnica

Tape & Reel (TR),Bulk OptiMOS™ Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 60 V 100A (Tc) 10V 3.5mOhm @ 100A, 10V 4V @ 90µA 128 nC @ 10 V ±20V 10400 pF @ 25 V - 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IPD65R660CFDBTMA1

IPD65R660CFDBTMA1

MOSFET N-CH 650V 6A TO252-3

Infineon Technologies
3,964 -

RFQ

IPD65R660CFDBTMA1

Ficha técnica

Tape & Reel (TR),Bulk CoolMOS™ Obsolete N-Channel MOSFET (Metal Oxide) 650 V 6A (Tc) 10V 660mOhm @ 2.1A, 10V 4.5V @ 200µA 22 nC @ 10 V ±20V 615 pF @ 100 V - 62.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
BSS84PH6327XTSA1

BSS84PH6327XTSA1

MOSFET P-CH 60V 170MA SOT23-3

Infineon Technologies
3,480 -

RFQ

BSS84PH6327XTSA1

Ficha técnica

Tape & Reel (TR) SIPMOS® Obsolete P-Channel MOSFET (Metal Oxide) 60 V 170mA (Ta) 4.5V, 10V 8Ohm @ 170mA, 10V 2V @ 20µA 1.5 nC @ 10 V ±20V 19 pF @ 25 V - 360mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
BUZ30AHXKSA1

BUZ30AHXKSA1

MOSFET N-CH 200V 21A TO220-3

Infineon Technologies
3,512 -

RFQ

BUZ30AHXKSA1

Ficha técnica

Bulk,Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 21A (Tc) 10V 130mOhm @ 13.5A, 10V 4V @ 1mA - ±20V 1900 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
BUZ31HXKSA1

BUZ31HXKSA1

MOSFET N-CH 200V 14.5A TO220-3

Infineon Technologies
4,554 -

RFQ

BUZ31HXKSA1

Ficha técnica

Tube,Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 14.5A (Tc) 5V 200mOhm @ 9A, 5V 4V @ 1mA - ±20V 1120 pF @ 25 V - 95W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPLK70R750P7ATMA1

IPLK70R750P7ATMA1

MOSFET N-CH 700V TDSON-8

Infineon Technologies
3,153 -

RFQ

IPLK70R750P7ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolMOS™ P7 Active N-Channel MOSFET (Metal Oxide) 700 V - - - - - - - - - - Surface Mount
IPI80CN10NG

IPI80CN10NG

N-CHANNEL POWER MOSFET

Infineon Technologies
3,557 -

RFQ

IPI80CN10NG

Ficha técnica

Bulk OptiMOS™ Active N-Channel MOSFET (Metal Oxide) 100 V 13A (Tc) 10V 80mOhm @ 13A, 10V 4V @ 12µA 11 nC @ 10 V ±20V 716 pF @ 50 V - 31W (Tc) -55°C ~ 175°C (TJ) Through Hole
BUZ31L H

BUZ31L H

MOSFET N-CH 200V 13.5A TO220-3

Infineon Technologies
3,117 -

RFQ

BUZ31L H

Ficha técnica

Tube SIPMOS® Obsolete N-Channel MOSFET (Metal Oxide) 200 V 13.5A (Tc) 5V 200mOhm @ 7A, 5V 2V @ 1mA - ±20V 1600 pF @ 25 V - 95W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+ Média diária de RFQ
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1800+ Fabricantes em todo o mundo
15,000+
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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