Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF3707Z

IRF3707Z

MOSFET N-CH 30V 59A TO220AB

Infineon Technologies
3,841 -

RFQ

IRF3707Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 59A (Tc) 4.5V, 10V 9.5mOhm @ 21A, 10V 2.25V @ 250µA 15 nC @ 4.5 V ±20V 1210 pF @ 15 V - 57W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3707ZL

IRF3707ZL

MOSFET N-CH 30V 59A TO262

Infineon Technologies
2,677 -

RFQ

IRF3707ZL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 59A (Tc) 4.5V, 10V 9.5mOhm @ 21A, 10V 2.25V @ 250µA 15 nC @ 4.5 V ±20V 1210 pF @ 15 V - 57W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3711ZCL

IRF3711ZCL

MOSFET N-CH 20V 92A TO262

Infineon Technologies
3,860 -

RFQ

IRF3711ZCL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 92A (Tc) 4.5V, 10V 6mOhm @ 15A, 10V 2.45V @ 250µA 24 nC @ 4.5 V ±20V 2150 pF @ 10 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF7484Q

IRF7484Q

MOSFET N-CH 40V 14A 8SO

Infineon Technologies
3,268 -

RFQ

IRF7484Q

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 14A (Ta) 7V 10mOhm @ 14A, 7V 2V @ 250µA 100 nC @ 7 V ±8V 3520 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFZ44VZ

IRFZ44VZ

MOSFET N-CH 60V 57A TO220AB

Infineon Technologies
2,762 -

RFQ

IRFZ44VZ

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 57A (Tc) 10V 12mOhm @ 34A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1690 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3709ZCL

IRF3709ZCL

MOSFET N-CH 30V 87A TO262

Infineon Technologies
2,003 -

RFQ

IRF3709ZCL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 87A (Tc) 4.5V, 10V 6.3mOhm @ 21A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2130 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ48Z

IRFZ48Z

MOSFET N-CH 55V 61A TO220AB

Infineon Technologies
3,731 -

RFQ

IRFZ48Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 61A (Tc) 10V 11mOhm @ 37A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1720 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ44ZS

IRFZ44ZS

MOSFET N-CH 55V 51A D2PAK

Infineon Technologies
2,646 -

RFQ

IRFZ44ZS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.9mOhm @ 31A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 1420 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ44ZL

IRFZ44ZL

MOSFET N-CH 55V 51A TO262

Infineon Technologies
2,037 -

RFQ

IRFZ44ZL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.9mOhm @ 31A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 1420 pF @ 25 V - 80W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ46ZS

IRFZ46ZS

MOSFET N-CH 55V 51A D2PAK

Infineon Technologies
2,245 -

RFQ

IRFZ46ZS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.6mOhm @ 31A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1460 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ46ZL

IRFZ46ZL

MOSFET N-CH 55V 51A TO262

Infineon Technologies
3,116 -

RFQ

IRFZ46ZL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 51A (Tc) 10V 13.6mOhm @ 31A, 10V 4V @ 250µA 46 nC @ 10 V ±20V 1460 pF @ 25 V - 82W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ44VZS

IRFZ44VZS

MOSFET N-CH 60V 57A D2PAK

Infineon Technologies
2,844 -

RFQ

IRFZ44VZS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 57A (Tc) 10V 12mOhm @ 34A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1690 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFZ48ZL

IRFZ48ZL

MOSFET N-CH 55V 61A TO262

Infineon Technologies
2,871 -

RFQ

IRFZ48ZL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 61A (Tc) 10V 11mOhm @ 37A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1720 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ44VZL

IRFZ44VZL

MOSFET N-CH 60V 57A TO262

Infineon Technologies
3,822 -

RFQ

IRFZ44VZL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 57A (Tc) 10V 12mOhm @ 34A, 10V 4V @ 250µA 65 nC @ 10 V ±20V 1690 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFZ48ZS

IRFZ48ZS

MOSFET N-CH 55V 61A D2PAK

Infineon Technologies
2,499 -

RFQ

IRFZ48ZS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 61A (Tc) 10V 11mOhm @ 37A, 10V 4V @ 250µA 64 nC @ 10 V ±20V 1720 pF @ 25 V - 91W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF540ZS

IRF540ZS

MOSFET N-CH 100V 36A D2PAK

Infineon Technologies
3,027 -

RFQ

IRF540ZS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 10V 26.5mOhm @ 22A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1770 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF540ZL

IRF540ZL

MOSFET N-CH 100V 36A TO262

Infineon Technologies
3,639 -

RFQ

IRF540ZL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 36A (Tc) 10V 26.5mOhm @ 22A, 10V 4V @ 250µA 63 nC @ 10 V ±20V 1770 pF @ 25 V - 92W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3709ZL

IRF3709ZL

MOSFET N-CH 30V 87A TO262

Infineon Technologies
3,115 -

RFQ

IRF3709ZL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 87A (Tc) 4.5V, 10V 6.3mOhm @ 21A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2130 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF3709ZS

IRF3709ZS

MOSFET N-CH 30V 87A D2PAK

Infineon Technologies
2,658 -

RFQ

IRF3709ZS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 87A (Tc) 4.5V, 10V 6.3mOhm @ 21A, 10V 2.25V @ 250µA 26 nC @ 4.5 V ±20V 2130 pF @ 15 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF4104L

IRF4104L

MOSFET N-CH 40V 75A TO262

Infineon Technologies
3,945 -

RFQ

IRF4104L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 5.5mOhm @ 75A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 3000 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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