Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF4104S

IRF4104S

MOSFET N-CH 40V 75A D2PAK

Infineon Technologies
3,750 -

RFQ

IRF4104S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 10V 5.5mOhm @ 75A, 10V 4V @ 250µA 100 nC @ 10 V ±20V 3000 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1010ZL

IRF1010ZL

MOSFET N-CH 55V 75A TO262

Infineon Technologies
2,917 -

RFQ

IRF1010ZL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7.5mOhm @ 75A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1010EZL

IRF1010EZL

MOSFET N-CH 60V 75A TO262

Infineon Technologies
3,334 -

RFQ

IRF1010EZL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 8.5mOhm @ 51A, 10V 4V @ 100µA 86 nC @ 10 V ±20V 2810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF1010ZS

IRF1010ZS

MOSFET N-CH 55V 75A D2PAK

Infineon Technologies
3,919 -

RFQ

IRF1010ZS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 75A (Tc) 10V 7.5mOhm @ 75A, 10V 4V @ 250µA 95 nC @ 10 V ±20V 2840 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF1010EZS

IRF1010EZS

MOSFET N-CH 60V 75A D2PAK

Infineon Technologies
3,593 -

RFQ

IRF1010EZS

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 75A (Tc) 10V 8.5mOhm @ 51A, 10V 4V @ 100µA 86 nC @ 10 V ±20V 2810 pF @ 25 V - 140W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFP1405

IRFP1405

MOSFET N-CH 55V 95A TO247AC

Infineon Technologies
2,208 -

RFQ

IRFP1405

Ficha técnica

Bag HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 95A (Tc) 10V 5.3mOhm @ 95A, 10V 4V @ 250µA 180 nC @ 10 V ±20V 5600 pF @ 25 V - 310W (Tc) -55°C ~ 175°C (TJ) Through Hole
64-8016

64-8016

MOSFET N-CH 40V 75A TO220AB

Infineon Technologies
2,262 -

RFQ

64-8016

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL1404ZL

IRL1404ZL

MOSFET N-CH 40V 75A TO262

Infineon Technologies
2,686 -

RFQ

IRL1404ZL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 40 V 75A (Tc) 4.5V, 10V 3.1mOhm @ 75A, 10V 2.7V @ 250µA 110 nC @ 5 V ±16V 5080 pF @ 25 V - 230W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3714Z

IRL3714Z

MOSFET N-CH 20V 36A TO220AB

Infineon Technologies
2,645 -

RFQ

IRL3714Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V 2.55V @ 250µA 7.2 nC @ 4.5 V ±20V 550 pF @ 10 V - 35W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3714ZL

IRL3714ZL

MOSFET N-CH 20V 36A TO262

Infineon Technologies
3,167 -

RFQ

IRL3714ZL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V 2.55V @ 250µA 7.2 nC @ 4.5 V ±20V 550 pF @ 10 V - 35W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3715Z

IRL3715Z

MOSFET N-CH 20V 50A TO220AB

Infineon Technologies
3,898 -

RFQ

IRL3715Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 4.5V, 10V 11mOhm @ 15A, 10V 2.55V @ 250µA 11 nC @ 4.5 V ±20V 870 pF @ 10 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3715ZL

IRL3715ZL

MOSFET N-CH 20V 50A TO262

Infineon Technologies
3,990 -

RFQ

IRL3715ZL

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 50A (Tc) 4.5V, 10V 11mOhm @ 15A, 10V 2.55V @ 250µA 11 nC @ 4.5 V ±20V 870 pF @ 10 V - 45W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL8113

IRL8113

MOSFET N-CH 30V 105A TO220AB

Infineon Technologies
2,255 -

RFQ

IRL8113

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 105A (Tc) 4.5V, 10V 6mOhm @ 21A, 10V 2.25V @ 250µA 35 nC @ 4.5 V ±20V 2840 pF @ 15 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL8113L

IRL8113L

MOSFET N-CH 30V 105A TO262

Infineon Technologies
3,305 -

RFQ

IRL8113L

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 105A (Tc) 4.5V, 10V 6mOhm @ 21A, 10V 2.25V @ 250µA 35 nC @ 4.5 V ±20V 2840 pF @ 15 V - 110W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL8113S

IRL8113S

MOSFET N-CH 30V 105A D2PAK

Infineon Technologies
3,762 -

RFQ

IRL8113S

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 105A (Tc) 4.5V, 10V 6mOhm @ 21A, 10V 2.25V @ 250µA 35 nC @ 4.5 V ±20V 2840 pF @ 15 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLU3714Z

IRLU3714Z

MOSFET N-CH 20V 37A I-PAK

Infineon Technologies
2,892 -

RFQ

IRLU3714Z

Ficha técnica

Tube HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 37A (Tc) 4.5V, 10V 15mOhm @ 15A, 10V 2.55V @ 250µA 7.1 nC @ 4.5 V ±20V 560 pF @ 10 V - 35W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRL3714ZSTRR

IRL3714ZSTRR

MOSFET N-CH 20V 36A D2PAK

Infineon Technologies
3,176 -

RFQ

IRL3714ZSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 36A (Tc) 4.5V, 10V 16mOhm @ 15A, 10V 2.55V @ 250µA 7.2 nC @ 4.5 V ±20V 550 pF @ 10 V - 35W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR3714ZTRR

IRLR3714ZTRR

MOSFET N-CH 20V 37A DPAK

Infineon Technologies
3,204 -

RFQ

IRLR3714ZTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 37A (Tc) 4.5V, 10V 15mOhm @ 15A, 10V 2.55V @ 250µA 7.1 nC @ 4.5 V ±20V 560 pF @ 10 V - 35W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRLR4343TR

IRLR4343TR

MOSFET N-CH 55V 26A DPAK

Infineon Technologies
2,492 -

RFQ

IRLR4343TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 26A (Tc) 4.5V, 10V 50mOhm @ 4.7A, 10V 1V @ 250µA 42 nC @ 10 V ±20V 740 pF @ 50 V - 79W (Tc) -40°C ~ 175°C (TJ) Surface Mount
IRLR4343TRR

IRLR4343TRR

MOSFET N-CH 55V 26A DPAK

Infineon Technologies
2,849 -

RFQ

IRLR4343TRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 55 V 26A (Tc) 4.5V, 10V 50mOhm @ 4.7A, 10V 1V @ 250µA 42 nC @ 10 V ±20V 740 pF @ 50 V - 79W (Tc) -40°C ~ 175°C (TJ) Surface Mount
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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