Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
SI3445DV

SI3445DV

P-CHANNEL MOSFET

Fairchild Semiconductor
33,310 -

RFQ

SI3445DV

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 5.5A (Ta) 1.8V, 4.5V 33mOhm @ 5.5A, 4.5V 1.5V @ 250µA 30 nC @ 4.5 V ±8V 1926 pF @ 10 V - 800mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SSU1N60BTU

SSU1N60BTU

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
30,809 -

RFQ

SSU1N60BTU

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 900mA (Tc) 10V 12Ohm @ 450mA, 10V 4V @ 250µA 7.7 nC @ 10 V ±30V 215 pF @ 25 V - 2.5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) Through Hole
SFR9214TF

SFR9214TF

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
59,206 -

RFQ

SFR9214TF

Ficha técnica

Bulk - Active P-Channel MOSFET (Metal Oxide) 250 V 1.53A (Tc) 10V 4Ohm @ 770mA, 10V 4V @ 250µA 11 nC @ 10 V ±30V 295 pF @ 25 V - 2.5W (Ta), 19W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI3442DV

SI3442DV

MOSFET N-CH 20V 4.1A SUPERSOT6

Fairchild Semiconductor
32,870 -

RFQ

SI3442DV

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 4.1A (Ta) 2.7V, 4.5V 60mOhm @ 4.1A, 4.5V 1V @ 250µA 14 nC @ 4.5 V 8V 365 pF @ 10 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDD6632

FDD6632

MOSFET N-CH 30V 9A DPAK

Fairchild Semiconductor
17,099 -

RFQ

FDD6632

Ficha técnica

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9A (Tc) 4.5V, 10V 70mOhm @ 9A, 10V 3V @ 250µA 4 nC @ 5 V ±20V 255 pF @ 15 V - 15W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDN372S

FDN372S

MOSFET N-CH 30V 2.6A SUPERSOT3

Fairchild Semiconductor
111,448 -

RFQ

FDN372S

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 2.6A (Ta) 4.5V, 10V 40mOhm @ 2.6A, 10V 3V @ 1mA 8.1 nC @ 5 V ±16V 630 pF @ 15 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDME0106NZT

FDME0106NZT

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor
21,625 -

RFQ

FDME0106NZT

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 9A (Ta) 1.8V, 4.5V 18mOhm @ 9A, 4.5V 1V @ 250µA 8.5 nC @ 4.5 V ±12V 865 pF @ 10 V - 700mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SI3455DV

SI3455DV

P-CHANNEL MOSFET

Fairchild Semiconductor
9,622 -

RFQ

SI3455DV

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 30 V 3.6A (Ta) 4.5V, 10V 75mOhm @ 3.6A, 10V 3V @ 250µA 5 nC @ 5 V ±20V 298 pF @ 15 V - 800mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDG329N

FDG329N

MOSFET N-CH 20V 1.5A SC88

Fairchild Semiconductor
383,936 -

RFQ

FDG329N

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 20 V 1.5A (Ta) 2.5V, 4.5V 90mOhm @ 1.5A, 4.5V 1.5V @ 250µA 4.6 nC @ 4.5 V ±12V 324 pF @ 10 V - 420mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SSP2N60B

SSP2N60B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
374,000 -

RFQ

SSP2N60B

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 2A (Tc) 10V 5Ohm @ 1A, 10V 4V @ 250µA 17 nC @ 10 V ±30V 490 pF @ 25 V - 54W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDFC2P100

FDFC2P100

MOSFET P-CH 20V 3A SUPERSOT6

Fairchild Semiconductor
115,946 -

RFQ

FDFC2P100

Ficha técnica

Bulk PowerTrench® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 2.5V, 4.5V 150mOhm @ 3A, 4.5V 1.5V @ 250µA 4.7 nC @ 10 V ±12V 445 pF @ 10 V Schottky Diode (Isolated) 1.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
NDS335N

NDS335N

MOSFET N-CH 20V 1.7A SUPERSOT3

Fairchild Semiconductor
103,522 -

RFQ

NDS335N

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 1.7A (Ta) 2.7V, 4.5V 110mOhm @ 1.7A, 4.5V 1V @ 250µA 9 nC @ 4.5 V 8V 240 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFS614B

IRFS614B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
80,881 -

RFQ

IRFS614B

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 2.8A (Tj) 10V 2Ohm @ 1.4A, 10V 4V @ 250µA 10.5 nC @ 10 V ±30V 275 pF @ 25 V - 22W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDN363N

FDN363N

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
58,788 -

RFQ

FDN363N

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 100 V 1A (Tc) 6V, 10V 240mOhm @ 1A, 10V 4V @ 250µA 5.2 nC @ 10 V ±20V 200 pF @ 25 V - 500mW (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFS634B

IRFS634B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
41,000 -

RFQ

IRFS634B

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 250 V 8.1A (Tj) 10V 450mOhm @ 4.05A, 10V 4V @ 250µA 38 nC @ 10 V ±30V 1000 pF @ 25 V - 38W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI3456DV

SI3456DV

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor
37,010 -

RFQ

SI3456DV

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 5.1A (Ta) 4.5V, 10V 45mOhm @ 5.1A, 10V 2V @ 250µA 12.6 nC @ 10 V ±20V 463 pF @ 15 V - 800mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF710B

IRF710B

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
31,593 -

RFQ

IRF710B

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.4Ohm @ 1A, 10V 4V @ 250µA 10 nC @ 10 V ±30V 330 pF @ 25 V - 36W (Tc) -55°C ~ 150°C (TJ) Through Hole
NDC631N

NDC631N

MOSFET N-CH 20V 4.1A SUPERSOT6

Fairchild Semiconductor
11,785 -

RFQ

NDC631N

Ficha técnica

Bulk - Obsolete N-Channel MOSFET (Metal Oxide) 20 V 4.1A (Ta) 2.7V, 4.5V 60mOhm @ 4.1A, 4.5V 1V @ 250µA 14 nC @ 4.5 V 8V 365 pF @ 10 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFW720BTMNL

IRFW720BTMNL

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
11,200 -

RFQ

IRFW720BTMNL

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 400 V 3.3A (Tc) 10V 1.75Ohm @ 1.65A, 10V 4V @ 250µA 18 nC @ 10 V ±30V 600 pF @ 25 V - 3.13W (Ta), 49W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SSR2N60BTF

SSR2N60BTF

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
196,048 -

RFQ

SSR2N60BTF

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 600 V 1.8A (Tc) 10V 5Ohm @ 900mA, 10V 4V @ 250µA 17 nC @ 10 V ±30V 490 pF @ 25 V - 2.5W (Ta), 44W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1500+ Média diária de RFQ
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20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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