Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
FDR836P

FDR836P

P-CHANNEL MOSFET

Fairchild Semiconductor
15,000 -

RFQ

FDR836P

Ficha técnica

Bulk PowerTrench® Active P-Channel MOSFET (Metal Oxide) 20 V 6.1A (Ta) 2.5V, 4.5V 30mOhm @ 6.1A, 4.5V 1V @ 250µA 44 nC @ 4.5 V ±8V 2200 pF @ 25 V - 900mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDMS8690

FDMS8690

MOSFET N-CH 30V 14A/27A 8MLP

Fairchild Semiconductor
433,080 -

RFQ

FDMS8690

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 14A (Ta), 27A (Tc) 4.5V, 10V 9mOhm @ 14A, 10V 3V @ 250µA 27 nC @ 10 V ±20V 1680 pF @ 15 V - 2.5W (Ta), 37.8W (Tc) -55°C ~ 150°C (TJ) Surface Mount
HUF76137P3

HUF76137P3

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
13,040 -

RFQ

HUF76137P3

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 30 V 75A (Tc) 4.5V, 10V 9mOhm @ 75A, 10V 3V @ 250µA 72 nC @ 10 V ±20V 2100 pF @ 25 V - 145W (Tc) -40°C ~ 150°C (TJ) Through Hole
FQPF16N25

FQPF16N25

MOSFET N-CH 250V 9.5A TO220F

Fairchild Semiconductor
79,828 -

RFQ

FQPF16N25

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 250 V 9.5A (Tc) 10V 230mOhm @ 4.75A, 10V 5V @ 250µA 35 nC @ 10 V ±30V 1200 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
FQPF9N50

FQPF9N50

MOSFET N-CH 500V 5.3A TO220F

Fairchild Semiconductor
43,450 -

RFQ

FQPF9N50

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5.3A (Tc) 10V 730mOhm @ 2.65A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 1450 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
HUFA76429D3ST

HUFA76429D3ST

MOSFET N-CH 60V 20A TO252AA

Fairchild Semiconductor
38,687 -

RFQ

HUFA76429D3ST

Ficha técnica

Bulk UltraFET™ Obsolete N-Channel MOSFET (Metal Oxide) 60 V 20A (Tc) 4.5V, 10V 23mOhm @ 20A, 10V 3V @ 250µA 46 nC @ 10 V ±16V 1480 pF @ 25 V - 110W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FDZ7064AS

FDZ7064AS

MOSFET N-CH 30V 13.5A 30BGA

Fairchild Semiconductor
34,720 -

RFQ

FDZ7064AS

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 13.5A (Ta) 4.5V, 10V 5.6mOhm @ 13.5A, 10V 3V @ 1mA 51 nC @ 10 V ±20V 1960 pF @ 15 V - 2.2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RFP15N05L

RFP15N05L

MOSFET N-CH 50V 15A TO220-3

Fairchild Semiconductor
32,443 -

RFQ

RFP15N05L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 50 V 15A (Tc) - 140mOhm @ 15A, 5V 2V @ 250µA - ±10V 900 pF @ 25 V - 60W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDPF7N50U

FDPF7N50U

MOSFET N-CH 500V 5A TO220F

Fairchild Semiconductor
335,595 -

RFQ

FDPF7N50U

Ficha técnica

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5A (Tc) 10V 1.5Ohm @ 2.5A, 10V 5V @ 250µA 16.6 nC @ 10 V ±30V 940 pF @ 25 V - 39W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDMS8660AS

FDMS8660AS

MOSFET N-CH 30V 28A/49A 8PQFN

Fairchild Semiconductor
134,018 -

RFQ

FDMS8660AS

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 28A (Ta), 49A (Tc) 4.5V, 10V 2.1mOhm @ 28A, 10V 3V @ 1mA 83 nC @ 10 V ±20V 5865 pF @ 15 V - 2.5W (Ta), 104W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NDS9435

NDS9435

P-CHANNEL POWER MOSFET

Fairchild Semiconductor
40,000 -

RFQ

NDS9435

Ficha técnica

Bulk SI9xxx Active P-Channel MOSFET (Metal Oxide) - 5.3A - - - - - - - 2W - Surface Mount
HUF75631SK8

HUF75631SK8

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
4,828 -

RFQ

HUF75631SK8

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 100 V 5.5A (Ta) 10V 39mOhm @ 5.5A, 10V 4V @ 250µA 79 nC @ 20 V ±20V 1225 pF @ 25 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS6680

FDS6680

MOSFET N-CH 30V 11.5A 8SOIC

Fairchild Semiconductor
58,328 -

RFQ

FDS6680

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 11.5A (Ta) 4.5V, 10V 10mOhm @ 11.5A, 10V 3V @ 250µA 27 nC @ 5 V ±20V 2070 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDS6670S

FDS6670S

SMALL SIGNAL N-CHANNEL MOSFET

Fairchild Semiconductor
28,785 -

RFQ

FDS6670S

Ficha técnica

Bulk PowerTrench® Active N-Channel MOSFET (Metal Oxide) 30 V 13.5A (Ta) 4.5V, 10V 9mOhm @ 13.5A, 10V 3V @ 1mA 34 nC @ 5 V ±20V 2674 pF @ 15 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQPF9N50YDTU

FQPF9N50YDTU

MOSFET N-CH 500V 5.3A TO220F-3

Fairchild Semiconductor
24,800 -

RFQ

FQPF9N50YDTU

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5.3A (Tc) 10V 730mOhm @ 2.65A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 1450 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
RF1S530SM9A

RF1S530SM9A

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
11,640 -

RFQ

RF1S530SM9A

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 160mOhm @ 8.3A, 10V 4V @ 250µA 30 nC @ 10 V ±20V 600 pF @ 25 V - 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FQPF9N50T

FQPF9N50T

MOSFET N-CH 500V 5.3A TO220F

Fairchild Semiconductor
11,000 -

RFQ

FQPF9N50T

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 500 V 5.3A (Tc) 10V 730mOhm @ 2.65A, 10V 5V @ 250µA 36 nC @ 10 V ±30V 1450 pF @ 25 V - 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDS6614A

FDS6614A

MOSFET N-CH 30V 9.3A 8SOIC

Fairchild Semiconductor
25,863 -

RFQ

FDS6614A

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 9.3A (Ta) 4.5V, 10V 18mOhm @ 9.3A, 10V 3V @ 250µA 17 nC @ 5 V ±20V 1160 pF @ 15 V - 2.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FDD6676AS

FDD6676AS

MOSFET N-CH 30V 90A TO252

Fairchild Semiconductor
209,310 -

RFQ

FDD6676AS

Ficha técnica

Bulk PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 90A (Ta) 4.5V, 10V 5.7mOhm @ 16A, 10V 3V @ 1mA 64 nC @ 10 V ±20V 2500 pF @ 15 V - 70W (Ta) -55°C ~ 150°C (TJ) Surface Mount
FQP2N60

FQP2N60

MOSFET N-CH 600V 2.4A TO220-3

Fairchild Semiconductor
84,915 -

RFQ

FQP2N60

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.4A (Tc) 10V 4.7Ohm @ 1.2A, 10V 4V @ 250µA 11 nC @ 10 V ±30V 350 pF @ 25 V - 64W (Tc) -55°C ~ 150°C (TJ) Through Hole
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1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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