Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTGS3441T1G

NTGS3441T1G

MOSFET P-CH 20V 1.65A 6TSOP

onsemi
321 -

RFQ

NTGS3441T1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 1.65A (Ta) 2.5V, 4.5V 90mOhm @ 3.3A, 4.5V 1.5V @ 250µA 14 nC @ 4.5 V ±8V 480 pF @ 5 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMP2045U-13

DMP2045U-13

MOSFET P-CH 20V 4.3A SOT23

Diodes Incorporated
2,561 -

RFQ

DMP2045U-13

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 4.3A (Ta) 1.8V, 4.5V 45mOhm @ 4A, 4.5V 1V @ 250µA 6.8 nC @ 4.5 V ±8V 634 pF @ 10 V - 800mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
RTM002P02T2L

RTM002P02T2L

MOSFET P-CH 20V 200MA VMT3

Rohm Semiconductor
832 -

RFQ

RTM002P02T2L

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 200mA (Ta) 2.5V, 4.5V 1.5Ohm @ 200mA, 4.5V 2V @ 1mA - ±12V 50 pF @ 10 V - 150mW (Ta) 150°C (TJ) Surface Mount
TPIC5424LDW

TPIC5424LDW

N-CHANNEL POWER MOSFET

Texas Instruments
600 -

RFQ

TPIC5424LDW

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFP351

IRFP351

N-CHANNEL POWER MOSFET

Harris Corporation
323 -

RFQ

IRFP351

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 350 V 16A (Tc) 10V 300mOhm @ 8.9A, 10V 4V @ 250µA 130 nC @ 10 V ±20V 2000 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
TPIC5621LDW

TPIC5621LDW

N-CHANNEL POWER MOSFET

Texas Instruments
290 -

RFQ

TPIC5621LDW

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFP251

IRFP251

N-CHANNEL POWER MOSFET

Harris Corporation
265 -

RFQ

IRFP251

Ficha técnica

Bulk - Active N-Channel MOSFET (Metal Oxide) 150 V 33A (Tc) 10V 85mOhm @ 17A, 10V 4V @ 250µA 120 nC @ 10 V ±20V 2000 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IPP50R199CPXK

IPP50R199CPXK

N-CHANNEL POWER MOSFET

Infineon Technologies
217 -

RFQ

IPP50R199CPXK

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SJ471-E

2SJ471-E

POWER MOSFET

Renesas Electronics America Inc
258 -

RFQ

2SJ471-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFF9221

IRFF9221

MOSFET N-CH 150V 2.5A TO205AF

International Rectifier
194 -

RFQ

IRFF9221

Ficha técnica

Bulk HEXFET® Active N-Channel MOSFET (Metal Oxide) 150 V 2.5A (Tc) - - - - - - - 20W - Through Hole
IXFA14N60P

IXFA14N60P

MOSFET N-CH 600V 14A TO263

IXYS
2,716 -

RFQ

IXFA14N60P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 600 V 14A (Tc) 10V 550mOhm @ 7A, 10V 5.5V @ 2.5mA 36 nC @ 10 V ±30V 2500 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Surface Mount
R6520KNXC7G

R6520KNXC7G

650V 20A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor
999 -

RFQ

R6520KNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 20A (Ta) 10V 205mOhm @ 9.5A, 10V 5V @ 630µA 40 nC @ 10 V ±20V 1550 pF @ 25 V - 68W (Tc) 150°C (TJ) Through Hole
R6020KNXC7G

R6020KNXC7G

600V 20A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor
989 -

RFQ

R6020KNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 20A (Ta) 10V 196mOhm @ 9.5A, 10V 5V @ 1mA 40 nC @ 10 V ±20V 1550 pF @ 25 V - 68W (Tc) 150°C (TJ) Through Hole
R6024VNXC7G

R6024VNXC7G

600V 13A TO-220FM, PRESTOMOS WIT

Rohm Semiconductor
2,078 -

RFQ

R6024VNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 13A (Tc) 10V, 15V 153mOhm @ 6A, 15V 6.5V @ 700µA 38 nC @ 10 V ±30V 1800 pF @ 100 V - 70W (Tc) 150°C (TJ) Through Hole
FDP5500-F085

FDP5500-F085

MOSFET N-CH 55V 80A TO220-3

Fairchild Semiconductor
175 -

RFQ

FDP5500-F085

Ficha técnica

Bulk Automotive, AEC-Q101, UltraFET™ Active N-Channel MOSFET (Metal Oxide) 55 V 80A (Tc) - 7mOhm @ 80A, 10V 4V @ 250µA 269 nC @ 20 V ±20V 3565 pF @ 25 V - 375W (Tc) -55°C ~ 175°C (TJ) Through Hole
2SK1313S-E

2SK1313S-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
1,000 -

RFQ

2SK1313S-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SJ302-Z-AZ

2SJ302-Z-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
740 -

RFQ

2SJ302-Z-AZ

Ficha técnica

Bulk * Obsolete - - - - - - - - - - - - - -
SPB11N60C2

SPB11N60C2

N-CHANNEL POWER MOSFET

Infineon Technologies
300 -

RFQ

SPB11N60C2

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SK1313-01L-E

2SK1313-01L-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
281 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
IPB80N04S2H4-ATMA2

IPB80N04S2H4-ATMA2

N-CHANNEL POWER MOSFET

Infineon Technologies
161 -

RFQ

IPB80N04S2H4-ATMA2

Ficha técnica

Bulk CoolMOS™ Active N-Channel MOSFET (Metal Oxide) 40 V 80A (Tc) 10V 3.7mOhm @ 80A, 10V 4V @ 250µA 148 nC @ 10 V ±20V 4400 pF @ 25 V - 300W (Tc) -55°C ~ 175°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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