Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
R6024ENXC7G

R6024ENXC7G

600V 24A TO-220FM, LOW-NOISE POW

Rohm Semiconductor
1,000 -

RFQ

R6024ENXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Ta) 10V 165mOhm @ 11.3A, 10V 4V @ 1mA 70 nC @ 10 V ±20V 1650 pF @ 25 V - 74W (Tc) 150°C (TJ) Through Hole
R6024KNXC7G

R6024KNXC7G

600V 24A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor
1,000 -

RFQ

R6024KNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Ta) 10V 165mOhm @ 11.3A, 10V 5V @ 1mA 45 nC @ 10 V ±20V 2000 pF @ 25 V - 74W (Tc) 150°C (TJ) Through Hole
R6524ENXC7G

R6524ENXC7G

650V 24A TO-220FM, LOW-NOISE POW

Rohm Semiconductor
1,000 -

RFQ

R6524ENXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 185mOhm @ 11.3A, 10V 4V @ 750µA 70 nC @ 10 V ±20V 1650 pF @ 25 V - 74W (Tc) 150°C (TJ) Through Hole
R6524KNXC7G

R6524KNXC7G

650V 24A TO-220FM, HIGH-SPEED SW

Rohm Semiconductor
990 -

RFQ

R6524KNXC7G

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Ta) 10V 185mOhm @ 11.3A, 10V 5V @ 750µA 45 nC @ 10 V ±20V 1850 pF @ 25 V - 74W (Tc) 150°C (TJ) Through Hole
NP82N04MDG-S18-AY

NP82N04MDG-S18-AY

MOSFET N-CH 40V 82A TO220-3

Renesas Electronics America Inc
700 -

RFQ

NP82N04MDG-S18-AY

Ficha técnica

Tube Automotive, AEC-Q101 Obsolete N-Channel MOSFET (Metal Oxide) 40 V 82A (Tc) - 4.2mOhm @ 41A, 10V 2.5V @ 250µA 150 nC @ 10 V ±20V 9000 pF @ 25 V - 1.8W (Ta), 143W (Tc) 175°C Through Hole
R6024VNX3C16

R6024VNX3C16

600V 24A TO-220AB, PRESTOMOS WIT

Rohm Semiconductor
2,501 -

RFQ

R6024VNX3C16

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 24A (Tc) 10V, 15V 153mOhm @ 6A, 15V 6.5V @ 700µA 38 nC @ 10 V ±30V 1800 pF @ 100 V - 245W (Tc) 150°C (TJ) Through Hole
2SK3116-S-AZ

2SK3116-S-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
465 -

RFQ

2SK3116-S-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
RJK2017DPE-WS#J3

RJK2017DPE-WS#J3

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
680 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
BUZ331

BUZ331

N-CHANNEL POWER MOSFET

Infineon Technologies
215 -

RFQ

BUZ331

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRFS350A

IRFS350A

MOSFET N-CH 400V 11.5A TO3PF

Fairchild Semiconductor
188 -

RFQ

IRFS350A

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 11.5A (Tc) 10V 300mOhm @ 5.75A, 10V 4V @ 250µA 131 nC @ 10 V ±30V 2780 pF @ 25 V - 92W (Tc) -55°C ~ 150°C (TJ) Through Hole
R6524ENZ4C13

R6524ENZ4C13

650V 24A TO-247, LOW-NOISE POWER

Rohm Semiconductor
495 -

RFQ

R6524ENZ4C13

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 650 V 24A (Tc) 10V 185mOhm @ 11.3A, 10V 4V @ 750µA 70 nC @ 10 V ±20V 1650 pF @ 25 V - 245W (Tc) 150°C (TJ) Through Hole
2SK2133-Z-E1-AZ

2SK2133-Z-E1-AZ

POWER FIELD-EFFECT TRANSISTOR

Renesas Electronics America Inc
481 -

RFQ

2SK2133-Z-E1-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
HUF75939S3ST

HUF75939S3ST

N-CHANNEL POWER MOSFET

Fairchild Semiconductor
800 -

RFQ

HUF75939S3ST

Ficha técnica

Bulk UltraFET® Active N-Channel MOSFET (Metal Oxide) 200 V 22A (Tc) 10V 125mOhm @ 22A, 10V 4V @ 250µA 152 nC @ 20 V ±20V 2200 pF @ 25 V - 180W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXTA86N20T

IXTA86N20T

MOSFET N-CH 200V 86A TO263

IXYS
2,632 -

RFQ

IXTA86N20T

Ficha técnica

Tube Trench Active N-Channel MOSFET (Metal Oxide) 200 V 86A (Tc) 10V 29mOhm @ 500mA, 10V 5V @ 1mA 90 nC @ 10 V ±30V 4500 pF @ 25 V - 480W (Tc) -55°C ~ 175°C (TJ) Surface Mount
FK10KM-12-A8#B00

FK10KM-12-A8#B00

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
439 -

RFQ

Bulk * Active - - - - - - - - - - - - - -
2SK1400A-E

2SK1400A-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
240 -

RFQ

2SK1400A-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SJ493-AZ

2SJ493-AZ

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
234 -

RFQ

2SJ493-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
2SK551

2SK551

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
499 -

RFQ

2SK551

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FQAF70N15

FQAF70N15

MOSFET N-CH 150V 44A TO3PF

Fairchild Semiconductor
925 -

RFQ

FQAF70N15

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 150 V 44A (Tc) 10V 28mOhm @ 22A, 10V 4V @ 250µA 175 nC @ 10 V ±25V 5400 pF @ 25 V - 130W (Tc) -55°C ~ 175°C (TJ) Through Hole
FQPF90N10V2

FQPF90N10V2

MOSFET N-CH 100V 90A TO220F

Fairchild Semiconductor
809 -

RFQ

FQPF90N10V2

Ficha técnica

Tube QFET® Obsolete N-Channel MOSFET (Metal Oxide) 100 V 90A (Tc) 10V 10mOhm @ 45A, 10V 4V @ 250µA 191 nC @ 10 V ±30V 6150 pF @ 25 V - 83W (Tc) -55°C ~ 175°C (TJ) Through Hole
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1500+ Média diária de RFQ
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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