Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTH44P15T

IXTH44P15T

MOSFET P-CH 150V 44A TO247

IXYS
3,128 -

RFQ

IXTH44P15T

Ficha técnica

Tube TrenchP™ Active P-Channel MOSFET (Metal Oxide) 150 V 44A (Tc) 10V 65mOhm @ 500mA, 10V 4V @ 250µA 175 nC @ 10 V ±15V 13400 pF @ 25 V - 298W (Tc) -55°C ~ 150°C (TJ) Through Hole
IMZA65R057M1HXKSA1

IMZA65R057M1HXKSA1

SILICON CARBIDE MOSFET, PG-TO247

Infineon Technologies
3,723 -

RFQ

IMZA65R057M1HXKSA1

Ficha técnica

Tube CoolSiC™ Active N-Channel SiCFET (Silicon Carbide) 650 V 35A (Tc) 18V 74mOhm @ 16.7A, 18V 5.7V @ 5mA 28 nC @ 18 V +20V, -2V 930 pF @ 400 V - 133W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF630STRL

IRF630STRL

MOSFET N-CH 200V 9A D2PAK

Vishay Siliconix
2,659 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 5.4A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 800 pF @ 25 V - 3W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF630STRR

IRF630STRR

MOSFET N-CH 200V 9A D2PAK

Vishay Siliconix
2,231 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 9A (Tc) 10V 400mOhm @ 5.4A, 10V 4V @ 250µA 43 nC @ 10 V ±20V 800 pF @ 25 V - 3W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
2SK2371-A

2SK2371-A

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
302 -

RFQ

2SK2371-A

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF634L

IRF634L

MOSFET N-CH 250V 8.1A I2PAK

Vishay Siliconix
3,181 -

RFQ

IRF634L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 250 V 8.1A (Tc) 10V 450mOhm @ 5.1A, 10V 4V @ 250µA 41 nC @ 10 V ±20V 770 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
2SK1285-AZ

2SK1285-AZ

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
700 -

RFQ

2SK1285-AZ

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IRF634STRL

IRF634STRL

MOSFET N-CH 250V 8.1A D2PAK

Vishay Siliconix
3,209 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8.1A (Tc) 10V 450mOhm @ 5.1A, 10V 4V @ 250µA 41 nC @ 10 V ±20V 770 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF634STRR

IRF634STRR

MOSFET N-CH 250V 8.1A D2PAK

Vishay Siliconix
2,504 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 8.1A (Tc) 10V 450mOhm @ 5.1A, 10V 4V @ 250µA 41 nC @ 10 V ±20V 770 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
TW048N65C,S1F

TW048N65C,S1F

G3 650V SIC-MOSFET TO-247 48MOH

Toshiba Semiconductor and Storage
2,174 -

RFQ

TW048N65C,S1F

Ficha técnica

Tube - Active N-Channel SiC (Silicon Carbide Junction Transistor) 650 V 40A (Tc) 18V 65mOhm @ 20A, 18V 5V @ 1.6mA 41 nC @ 18 V +25V, -10V 1362 pF @ 400 V - 132W (Tc) 175°C Through Hole
IRF640L

IRF640L

MOSFET N-CH 200V 18A I2PAK

Vishay Siliconix
2,892 -

RFQ

IRF640L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF640STRL

IRF640STRL

MOSFET N-CH 200V 18A D2PAK

Vishay Siliconix
2,946 -

RFQ

IRF640STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NTE464

NTE464

MOSFET-P CHANNEL AMP/SW

NTE Electronics, Inc
3,957 -

RFQ

NTE464

Ficha técnica

Bag - Active P-Channel MOSFET (Metal Oxide) 25 V 10A 10V 600Ohm @ 0A, 10V 5V @ 10A - ±30V 5000 pF @ 10 V Standard 800mW (Tc) 175°C (TJ) Through Hole
IRF362

IRF362

N-CHANNEL HERMETIC MOS HEXFET

International Rectifier
160 -

RFQ

IRF362

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
APT38F80B2

APT38F80B2

MOSFET N-CH 800V 41A T-MAX

Microchip Technology
2,446 -

RFQ

APT38F80B2

Ficha técnica

Tube POWER MOS 8™ Active N-Channel MOSFET (Metal Oxide) 800 V 41A (Tc) 10V 240mOhm @ 20A, 10V 5V @ 2.5mA 260 nC @ 10 V ±30V 8070 pF @ 25 V - 1040W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXTH60N20L2

IXTH60N20L2

MOSFET N-CH 200V 60A TO247

IXYS
3,261 -

RFQ

IXTH60N20L2

Ficha técnica

Tube Linear L2™ Active N-Channel MOSFET (Metal Oxide) 200 V 60A (Tc) 10V 45mOhm @ 30A, 10V 4.5V @ 250µA 255 nC @ 10 V ±20V 10500 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Through Hole
FDH50N50

FDH50N50

MOSFET N-CH 500V 48A TO247-3

Fairchild Semiconductor
761 -

RFQ

FDH50N50

Ficha técnica

Tube UniFET™ Obsolete N-Channel MOSFET (Metal Oxide) 500 V 48A (Tc) 10V 105mOhm @ 24A, 10V 5V @ 250µA 137 nC @ 10 V ±30V 6460 pF @ 25 V - 625W (Tc) -55°C ~ 150°C (TJ) Through Hole
4AM14

4AM14

P-CHANNEL POWER MOSFET

Renesas Electronics America Inc
202 -

RFQ

4AM14

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IXFR44N80P

IXFR44N80P

MOSFET N-CH 800V 25A ISOPLUS247

IXYS
2,481 -

RFQ

IXFR44N80P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 800 V 25A (Tc) 10V 200mOhm @ 22A, 10V 5V @ 8mA 200 nC @ 10 V ±30V 12000 pF @ 25 V - 300W (Tc) -55°C ~ 150°C (TJ) Through Hole
GCMX080B120S1-E1

GCMX080B120S1-E1

SIC 1200V 80M MOSFET SOT-227

SemiQ
3,515 -

RFQ

GCMX080B120S1-E1

Ficha técnica

Tube - Active N-Channel SiCFET (Silicon Carbide) 1200 V 30A (Tc) 20V 100mOhm @ 20A, 20V 4V @ 10mA 58 nC @ 20 V +25V, -10V 1336 pF @ 1000 V - 142W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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