Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF640STRR

IRF640STRR

MOSFET N-CH 200V 18A D2PAK

Vishay Siliconix
2,058 -

RFQ

IRF640STRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 200 V 18A (Tc) 10V 180mOhm @ 11A, 10V 4V @ 250µA 70 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF644L

IRF644L

MOSFET N-CH 250V 14A I2PAK

Vishay Siliconix
3,448 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 280mOhm @ 8.4A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 1300 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
IRF644STRR

IRF644STRR

MOSFET N-CH 250V 14A D2PAK

Vishay Siliconix
3,069 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 14A (Tc) 10V 280mOhm @ 8.4A, 10V 4V @ 250µA 68 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF710L

IRF710L

MOSFET N-CH 400V 2A I2PAK

Vishay Siliconix
2,999 -

RFQ

IRF710L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.6Ohm @ 1.2A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 170 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
IRF710STRL

IRF710STRL

MOSFET N-CH 400V 2A D2PAK

Vishay Siliconix
3,790 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.6Ohm @ 1.2A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 170 pF @ 25 V - 3.1W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF710STRR

IRF710STRR

MOSFET N-CH 400V 2A D2PAK

Vishay Siliconix
3,951 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 2A (Tc) 10V 3.6Ohm @ 1.2A, 10V 4V @ 250µA 17 nC @ 10 V ±20V 170 pF @ 25 V - 3.1W (Ta), 36W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7207TR

IRF7207TR

MOSFET P-CH 20V 5.4A 8SO

Infineon Technologies
2,387 -

RFQ

IRF7207TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.4A (Tc) 2.7V, 4.5V 60mOhm @ 5.4A, 4.5V 700mV @ 250µA (Min) 22 nC @ 4.5 V ±12V 780 pF @ 15 V - 2.5W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF720L

IRF720L

MOSFET N-CH 400V 3.3A I2PAK

Vishay Siliconix
2,079 -

RFQ

IRF720L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 3.3A (Tc) 10V 1.8Ohm @ 2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 410 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF720STRL

IRF720STRL

MOSFET N-CH 400V 3.3A D2PAK

Vishay Siliconix
3,236 -

RFQ

IRF720STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 3.3A (Tc) 10V 1.8Ohm @ 2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 410 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF720STRR

IRF720STRR

MOSFET N-CH 400V 3.3A D2PAK

Vishay Siliconix
3,941 -

RFQ

IRF720STRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 3.3A (Tc) 10V 1.8Ohm @ 2A, 10V 4V @ 250µA 20 nC @ 10 V ±20V 410 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF730STRL

IRF730STRL

MOSFET N-CH 400V 5.5A D2PAK

Vishay Siliconix
4,000 -

RFQ

IRF730STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 700 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF730STRR

IRF730STRR

MOSFET N-CH 400V 5.5A D2PAK

Vishay Siliconix
2,175 -

RFQ

IRF730STRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 400 V 5.5A (Tc) 10V 1Ohm @ 3.3A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 700 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF7322D1

IRF7322D1

MOSFET P-CH 20V 5.3A 8SO

Infineon Technologies
2,875 -

RFQ

IRF7322D1

Ficha técnica

Tube FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.3A (Ta) 2.7V, 4.5V 62mOhm @ 2.9A, 4.5V 700mV @ 250µA (Min) 29 nC @ 4.5 V ±12V 780 pF @ 15 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7322D1TR

IRF7322D1TR

MOSFET P-CH 20V 5.3A 8SO

Infineon Technologies
3,852 -

RFQ

IRF7322D1TR

Ficha técnica

Tape & Reel (TR) FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 5.3A (Ta) 2.7V, 4.5V 62mOhm @ 2.9A, 4.5V 700mV @ 250µA (Min) 29 nC @ 4.5 V ±12V 780 pF @ 15 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7324D1TR

IRF7324D1TR

MOSFET P-CH 20V 2.2A 8SO

Infineon Technologies
2,635 -

RFQ

IRF7324D1TR

Ficha técnica

Tape & Reel (TR) FETKY™ Obsolete P-Channel MOSFET (Metal Oxide) 20 V 2.2A (Ta) 2.7V, 4.5V 270mOhm @ 1.2A, 4.5V 700mV @ 250µA (Min) 7.8 nC @ 4.5 V ±12V 260 pF @ 15 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF734L

IRF734L

MOSFET N-CH 450V 4.9A I2PAK

Vishay Siliconix
3,619 -

RFQ

IRF734L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 450 V 4.9A (Tc) 10V 1.2Ohm @ 2.9A, 10V 4V @ 250µA 45 nC @ 10 V ±20V 680 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
IRF7353D2

IRF7353D2

MOSFET N-CH 30V 6.5A 8SO

Infineon Technologies
2,189 -

RFQ

IRF7353D2

Ficha técnica

Tube FETKY™ Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta) 4.5V, 10V 29mOhm @ 5.8A, 10V 1V @ 250µA 33 nC @ 10 V ±20V 650 pF @ 25 V Schottky Diode (Isolated) 2W (Ta) -55°C ~ 150°C (TJ) Surface Mount
2SK1934-E

2SK1934-E

N-CHANNEL POWER MOSFET

Renesas Electronics America Inc
532 -

RFQ

2SK1934-E

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
IXFK220N15P

IXFK220N15P

MOSFET N-CH 150V 220A TO264AA

IXYS
3,509 -

RFQ

IXFK220N15P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 150 V 220A (Tc) 10V 9mOhm @ 500mA, 10V 4.5V @ 8mA 162 nC @ 10 V ±20V 15400 pF @ 25 V - 1250W (Tc) -55°C ~ 175°C (TJ) Through Hole
APT10050LVRG

APT10050LVRG

MOSFET N-CH 1000V 21A TO264

Microchip Technology
2,653 -

RFQ

APT10050LVRG

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 1000 V 21A (Tc) - 500mOhm @ 500mA, 10V 4V @ 2.5mA 500 nC @ 10 V - 7900 pF @ 25 V - - - Through Hole
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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