Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IXTZ550N055T2

IXTZ550N055T2

MOSFET N-CH 55V 550A DE475

IXYS
2,485 -

RFQ

IXTZ550N055T2

Ficha técnica

Tube TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 55 V 550A (Tc) 10V 1mOhm @ 100A, 10V 4V @ 250µA 595 nC @ 10 V ±20V 40000 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IXFB82N60Q3

IXFB82N60Q3

MOSFET N-CH 600V 82A PLUS264

IXYS
3,056 -

RFQ

IXFB82N60Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 600 V 82A (Tc) 10V 75mOhm @ 41A, 10V 6.5V @ 8mA 275 nC @ 10 V ±30V 13500 pF @ 25 V - 1560W (Tc) -55°C ~ 150°C (TJ) Through Hole
MSC035SMA170S

MSC035SMA170S

MOSFET SIC 1700V 35 MOHM TO-268

Microchip Technology
2,622 -

RFQ

MSC035SMA170S

Ficha técnica

Bulk - Active N-Channel SiCFET (Silicon Carbide) 1700 V 59A (Tc) 20V 45mOhm @ 30A, 20V 3.25V @ 2.5mA (Typ) 178 nC @ 20 V +23V, -10V 3300 pF @ 1000 V - 278W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MSC080SMA120JS15

MSC080SMA120JS15

MOSFET SIC 1200V 80 MOHM 15A SOT

Microchip Technology
3,594 -

RFQ

Bulk - Active N-Channel SiCFET (Silicon Carbide) 1200 V 31A (Tc) 20V 100mOhm @ 15A, 20V 2.8V @ 1mA 64 nC @ 20 V +23V, -10V 838 pF @ 1000 V - 143W (Tc) -55°C ~ 175°C (TJ) Chassis Mount
MMIX1F230N20T

MMIX1F230N20T

MOSFET N-CH 200V 168A 24SMPD

IXYS
2,004 -

RFQ

MMIX1F230N20T

Ficha técnica

Tube GigaMOS™, HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 200 V 168A (Tc) 10V 8.3mOhm @ 60A, 10V 5V @ 8mA 378 nC @ 10 V ±20V 28000 pF @ 25 V - 600W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MMIX1F420N10T

MMIX1F420N10T

MOSFET N-CH 100V 334A 24SMPD

IXYS
3,262 -

RFQ

MMIX1F420N10T

Ficha técnica

Tube GigaMOS™, HiPerFET™, TrenchT2™ Active N-Channel MOSFET (Metal Oxide) 100 V 334A (Tc) 10V 2.6mOhm @ 60A, 10V 5V @ 8mA 670 nC @ 10 V ±20V 4700 pF @ 10 V - 680W (Tc) -55°C ~ 175°C (TJ) Surface Mount
MMIX1T550N055T2

MMIX1T550N055T2

MOSFET N-CH 55V 550A 24SMPD

IXYS
3,322 -

RFQ

MMIX1T550N055T2

Ficha técnica

Tube FRFET®, SupreMOS® Active N-Channel MOSFET (Metal Oxide) 55 V 550A (Tc) 10V 1.3mOhm @ 100A, 10V 3.8V @ 250µA 595 nC @ 10 V ±20V 40000 pF @ 25 V - 830W (Tc) -55°C ~ 175°C (TJ) Surface Mount
NTE2384

NTE2384

MOSFET N-CHANNEL 900V 6A TO3

NTE Electronics, Inc
2,482 -

RFQ

NTE2384

Ficha técnica

Bag - Active N-Channel MOSFET (Metal Oxide) 900 V 6A (Tc) 10V 1.4Ohm @ 3A, 10V 4.5V @ 250µA 130 nC @ 10 V ±20V 2600 pF @ 25 V - 180W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFR24N100Q3

IXFR24N100Q3

MOSFET N-CH 1000V 18A ISOPLUS247

IXYS
2,124 -

RFQ

IXFR24N100Q3

Ficha técnica

Tube HiPerFET™, Q3 Class Active N-Channel MOSFET (Metal Oxide) 1000 V 18A (Tc) 10V 490mOhm @ 12A, 10V 6.5V @ 4mA 140 nC @ 10 V ±30V 7200 pF @ 25 V - 500W (Tc) -55°C ~ 150°C (TJ) Through Hole
IXFB300N10P

IXFB300N10P

MOSFET N-CH 100V 300A PLUS264

IXYS
3,423 -

RFQ

IXFB300N10P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 100 V 300A (Tc) 10V 5.5mOhm @ 50A, 10V 5V @ 8mA 279 nC @ 10 V ±20V 23000 pF @ 25 V - 1500W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXFB210N20P

IXFB210N20P

MOSFET N-CH 200V 210A PLUS264

IXYS
2,833 -

RFQ

IXFB210N20P

Ficha técnica

Tube HiPerFET™, Polar Active N-Channel MOSFET (Metal Oxide) 200 V 210A (Tc) 10V 10.5mOhm @ 105A, 10V 4.5V @ 8mA 255 nC @ 10 V ±20V 18600 pF @ 25 V - 1500W (Tc) -55°C ~ 175°C (TJ) Through Hole
IXTF1N250

IXTF1N250

MOSFET N-CH 2500V 1A ISOPLUS I4

IXYS
3,952 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 2500 V 1A (Tc) 10V 40Ohm @ 500mA, 10V 4V @ 250µA 41 nC @ 10 V ±20V 1660 pF @ 25 V - 110W -55°C ~ 150°C (TJ) Through Hole
APT50M50JVFR

APT50M50JVFR

MOSFET N-CH 500V 77A ISOTOP

Microchip Technology
3,166 -

RFQ

APT50M50JVFR

Ficha técnica

Tube POWER MOS V® Active N-Channel MOSFET (Metal Oxide) 500 V 77A (Tc) - 50mOhm @ 500mA, 10V 4V @ 5mA 1000 nC @ 10 V - 19600 pF @ 25 V - - - Chassis Mount
IXTT2N300P3HV

IXTT2N300P3HV

MOSFET N-CH 3000V 2A TO268

IXYS
3,064 -

RFQ

IXTT2N300P3HV

Ficha técnica

Tube Polar P3™ Active N-Channel MOSFET (Metal Oxide) 3000 V 2A (Tc) 10V 21Ohm @ 1A, 10V 5V @ 250µA 73 nC @ 10 V ±20V 1890 pF @ 25 V - 520W (Tc) -55°C ~ 155°C (TJ) Surface Mount
IXTN17N120L

IXTN17N120L

MOSFET N-CH 1200V 15A SOT-227B

IXYS
2,321 -

RFQ

IXTN17N120L

Ficha técnica

Tube Linear Active N-Channel MOSFET (Metal Oxide) 1200 V 15A (Tc) 20V 900mOhm @ 8.5A, 20V 5V @ 250µA 155 nC @ 15 V ±30V 8300 pF @ 25 V - 540W (Tc) -55°C ~ 150°C (TJ) Chassis Mount
IXTL2N470

IXTL2N470

MOSFET N-CH 4700V 2A I5PAK

IXYS
3,308 -

RFQ

IXTL2N470

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 4700 V 2A (Tc) 10V 20Ohm @ 1A, 10V 6V @ 250µA 180 nC @ 10 V ±20V 6860 pF @ 25 V - 220W (Tc) -55°C ~ 150°C (TJ) Through Hole
SI8447DB-T2-E1

SI8447DB-T2-E1

MOSFET P-CH 20V 11A 6MICRO FOOT

Vishay Siliconix
125 -

RFQ

SI8447DB-T2-E1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Obsolete P-Channel MOSFET (Metal Oxide) 20 V 11A (Tc) 1.7V, 4.5V 75mOhm @ 1A, 4.5V 1.2V @ 250µA 25 nC @ 10 V ±12V 600 pF @ 10 V - 2.77W (Ta), 13W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SSM3J15FS,LF

SSM3J15FS,LF

MOSFET P-CH 30V 100MA SSM

Toshiba Semiconductor and Storage
413 -

RFQ

SSM3J15FS,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 100mA (Ta) 2.5V, 4V 12Ohm @ 10mA, 4V 1.7V @ 100µA - ±20V 9.1 pF @ 3 V - 100mW (Ta) 150°C Surface Mount
2N7002K-TP

2N7002K-TP

MOSFET N-CH 60V 340MA SOT23

Micro Commercial Co
2,783 -

RFQ

2N7002K-TP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 60 V 340mA (Ta) 4.5V, 10V 5Ohm @ 500mA, 10V 1V @ 1mA - ±20V 40 pF @ 10 V - 350mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRF7811TR

IRF7811TR

MOSFET N-CH 28V 14A 8SO

Infineon Technologies
3,393 -

RFQ

IRF7811TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 28 V 14A (Ta) 4.5V 11mOhm @ 15A, 4.5V 1V @ 250µA 23 nC @ 5 V ±12V 1800 pF @ 16 V - 3.5W (Ta) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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