Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF9530L

IRF9530L

MOSFET P-CH 100V 12A I2PAK

Vishay Siliconix
2,048 -

RFQ

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 300mOhm @ 7.2A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 860 pF @ 25 V - - -55°C ~ 175°C (TJ) Through Hole
IRF9530NSTRR

IRF9530NSTRR

MOSFET P-CH 100V 14A D2PAK

Infineon Technologies
2,824 -

RFQ

IRF9530NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 14A (Tc) 10V 200mOhm @ 8.4A, 10V 4V @ 250µA 58 nC @ 10 V ±20V 760 pF @ 25 V - 3.8W (Ta), 79W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9530STRR

IRF9530STRR

MOSFET P-CH 100V 12A D2PAK

Vishay Siliconix
3,976 -

RFQ

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 100 V 12A (Tc) 10V 300mOhm @ 7.2A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 860 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9540L

IRF9540L

MOSFET P-CH 100V 19A I2PAK

Vishay Siliconix
3,409 -

RFQ

IRF9540L

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 10V 200mOhm @ 11A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - - -55°C ~ 175°C (TJ) Through Hole
IRF9540NSTRR

IRF9540NSTRR

MOSFET P-CH 100V 23A D2PAK

Infineon Technologies
3,116 -

RFQ

IRF9540NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 23A (Tc) 10V 117mOhm @ 11A, 10V 4V @ 250µA 97 nC @ 10 V ±20V 1300 pF @ 25 V - 3.8W (Ta), 140W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9540STRR

IRF9540STRR

MOSFET P-CH 100V 19A D2PAK

Vishay Siliconix
3,353 -

RFQ

IRF9540STRR

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 100 V 19A (Tc) 10V 200mOhm @ 11A, 10V 4V @ 250µA 61 nC @ 10 V ±20V 1400 pF @ 25 V - 3.7W (Ta), 150W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9610L

IRF9610L

MOSFET P-CH 200V 1.8A I2PAK

Vishay Siliconix
3,419 -

RFQ

IRF9610L

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 1.8A (Tc) 10V 3Ohm @ 900mA, 10V 4V @ 250µA 11 nC @ 10 V ±20V 170 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
IRF9610STRL

IRF9610STRL

MOSFET P-CH 200V 1.8A D2PAK

Vishay Siliconix
3,033 -

RFQ

IRF9610STRL

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 200 V 1.8A (Tc) 10V 3Ohm @ 900mA, 10V 4V @ 250µA 11 nC @ 10 V ±20V 170 pF @ 25 V - 3W (Ta), 20W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9610STRR

IRF9610STRR

MOSFET P-CH 200V 1.8A D2PAK

Vishay Siliconix
2,907 -

RFQ

IRF9610STRR

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 200 V 1.8A (Tc) 10V 3Ohm @ 900mA, 10V 4V @ 250µA 11 nC @ 10 V ±20V 170 pF @ 25 V - 3W (Ta), 20W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9620L

IRF9620L

MOSFET P-CH 200V 3.5A I2PAK

Vishay Siliconix
3,439 -

RFQ

IRF9620L

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
NX3008PBK,215

NX3008PBK,215

MOSFET P-CH 30V 230MA TO236AB

Nexperia USA Inc.
2,848 -

RFQ

NX3008PBK,215

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active P-Channel MOSFET (Metal Oxide) 30 V 230mA (Ta) 2.5V, 4.5V 4.1Ohm @ 200mA, 4.5V 1.1V @ 250µA 0.72 nC @ 4.5 V ±8V 46 pF @ 15 V - 350mW (Ta), 1.14W (Tc) -55°C ~ 150°C (TJ) Surface Mount
RSC002P03T316

RSC002P03T316

MOSFET P-CH 30V 250MA SST3

Rohm Semiconductor
153 -

RFQ

RSC002P03T316

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 250mA (Ta) 4V, 10V 1.4Ohm @ 250mA, 10V 2.5V @ 1mA - ±20V 30 pF @ 10 V - 200mW (Ta) 150°C (TJ) Surface Mount
IRF9620STRL

IRF9620STRL

MOSFET P-CH 200V 3.5A D2PAK

Vishay Siliconix
2,472 -

RFQ

IRF9620STRL

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 3W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
XP233N05013R-G

XP233N05013R-G

MOSFET N-CH 30V 500MA SOT323-3

Torex Semiconductor Ltd
116 -

RFQ

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 500mA (Ta) 2.5V, 4.5V 1.5Ohm @ 100mA, 4.5V 1.7V @ 250µA 0.78 nC @ 10 V ±20V 40 pF @ 10 V - 350mW (Ta) 150°C (TJ) Surface Mount
PMH260UNEH

PMH260UNEH

MOSFET N-CH 20V 1.2A DFN0606-3

Nexperia USA Inc.
213 -

RFQ

PMH260UNEH

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 20 V 1.2A (Ta) 1.5V, 4.5V 310mOhm @ 700mA, 4.5V 950mV @ 250µA 0.95 nC @ 4.5 V ±8V 41 pF @ 10 V - 360mW (Ta), 2.23W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMH550UPEH

PMH550UPEH

MOSFET P-CH 20V 800MA DFN0606-3

Nexperia USA Inc.
516 -

RFQ

PMH550UPEH

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, TrenchMOS™ Active P-Channel MOSFET (Metal Oxide) 20 V 800mA (Ta) 1.8V, 4.5V 640mOhm @ 600mA, 4.5V 950mV @ 250µA 0.9 nC @ 4.5 V ±8V 54.8 pF @ 10 V - 360mW (Ta), 2.23W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIUD403ED-T1-GE3

SIUD403ED-T1-GE3

MOSFET P-CH 20V 500MA PPAK 0806

Vishay Siliconix
115 -

RFQ

SIUD403ED-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen III Active P-Channel MOSFET (Metal Oxide) 20 V 500mA (Ta) 1.5V, 4.5V 1.25Ohm @ 300mA, 4.5V 900mV @ 250µA 1 nC @ 4.5 V ±8V 31 pF @ 10 V - 1.25W (Ta) -55°C ~ 150°C (TJ) Surface Mount
MMBF2201NT1G

MMBF2201NT1G

MOSFET N-CH 20V 300MA SC70-3

onsemi
305 -

RFQ

MMBF2201NT1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs N-Channel MOSFET (Metal Oxide) 20 V 300mA (Ta) 4.5V, 10V 1Ohm @ 300mA, 10V 2.4V @ 250µA - ±20V 45 pF @ 5 V - 150mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
SSM3K56FS,LF

SSM3K56FS,LF

MOSFET N-CH 20V 800MA SSM

Toshiba Semiconductor and Storage
749,990 -

RFQ

SSM3K56FS,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII-H Active N-Channel MOSFET (Metal Oxide) 20 V 800mA (Ta) 1.5V, 4.5V 235mOhm @ 800mA, 4.5V 1V @ 1mA 1 nC @ 4.5 V ±8V 55 pF @ 10 V - 150mW (Ta) 150°C (TJ) Surface Mount
SSM6K504NU,LF

SSM6K504NU,LF

MOSFET N-CH 30V 9A 6UDFNB

Toshiba Semiconductor and Storage
2,075 -

RFQ

SSM6K504NU,LF

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) U-MOSVII Active N-Channel MOSFET (Metal Oxide) 30 V 9A (Ta) 4.5V, 10V 19.5mOhm @ 4A, 10V 2.5V @ 100µA 4.8 nC @ 4.5 V ±20V 620 pF @ 15 V - 1.25W (Ta) 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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