Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRF9620STRR

IRF9620STRR

MOSFET P-CH 200V 3.5A D2PAK

Vishay Siliconix
2,046 -

RFQ

IRF9620STRR

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 200 V 3.5A (Tc) 10V 1.5Ohm @ 1.5A, 10V 4V @ 250µA 22 nC @ 10 V ±20V 350 pF @ 25 V - 3W (Ta), 40W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9630L

IRF9630L

MOSFET P-CH 200V 6.5A I2PAK

Vishay Siliconix
2,811 -

RFQ

IRF9630L

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 6.5A (Tc) 10V 800mOhm @ 3.9A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 700 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
IRF9630STRL

IRF9630STRL

MOSFET P-CH 200V 6.5A D2PAK

Vishay Siliconix
3,917 -

RFQ

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 6.5A (Tc) 10V 800mOhm @ 3.9A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 700 pF @ 25 V - 3W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9630STRR

IRF9630STRR

MOSFET P-CH 200V 6.5A D2PAK

Vishay Siliconix
3,152 -

RFQ

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 6.5A (Tc) 10V 800mOhm @ 3.9A, 10V 4V @ 250µA 29 nC @ 10 V ±20V 700 pF @ 25 V - 3W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9640L

IRF9640L

MOSFET P-CH 200V 11A I2PAK

Vishay Siliconix
2,009 -

RFQ

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 3W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9640STRR

IRF9640STRR

MOSFET P-CH 200V 11A D2PAK

Vishay Siliconix
2,590 -

RFQ

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 11A (Tc) 10V 500mOhm @ 6.6A, 10V 4V @ 250µA 44 nC @ 10 V ±20V 1200 pF @ 25 V - 3W (Ta), 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRF9Z14L

IRF9Z14L

MOSFET P-CH 60V 6.7A I2PAK

Vishay Siliconix
2,923 -

RFQ

IRF9Z14L

Ficha técnica

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) 10V 500mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRF9Z14STRL

IRF9Z14STRL

MOSFET P-CH 60V 6.7A D2PAK

Vishay Siliconix
2,846 -

RFQ

IRF9Z14STRL

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) 10V 500mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9Z14STRR

IRF9Z14STRR

MOSFET P-CH 60V 6.7A D2PAK

Vishay Siliconix
3,462 -

RFQ

IRF9Z14STRR

Ficha técnica

Tape & Reel (TR) - Active P-Channel MOSFET (Metal Oxide) 60 V 6.7A (Tc) 10V 500mOhm @ 4A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 3.7W (Ta), 43W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFL1006TR

IRFL1006TR

MOSFET N-CH 60V 1.6A SOT223

Infineon Technologies
2,772 -

RFQ

IRFL1006TR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete N-Channel MOSFET (Metal Oxide) 60 V 1.6A (Ta) 10V 220mOhm @ 1.6A, 10V 4V @ 250µA 8 nC @ 10 V ±20V 160 pF @ 25 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
IRFL214TR

IRFL214TR

MOSFET N-CH 250V 790MA SOT223

Vishay Siliconix
3,471 -

RFQ

IRFL214TR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 250 V 790mA (Tc) 10V 2Ohm @ 470mA, 10V 4V @ 250µA 8.2 nC @ 10 V ±20V 140 pF @ 25 V - 2W (Ta), 3.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFL31N20D

IRFL31N20D

MOSFET N-CH 200V 31A D2PAK

Vishay Siliconix
3,042 -

RFQ

Tube - Discontinued at Mosen N-Channel MOSFET (Metal Oxide) 200 V 31A (Ta) - - - - - - - - - Surface Mount
IRFPC50LC

IRFPC50LC

MOSFET N-CH 600V 11A TO247-3

Vishay Siliconix
2,794 -

RFQ

IRFPC50LC

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 11A (Tc) 10V 600mOhm @ 6.6A, 10V 4V @ 250µA 84 nC @ 10 V ±30V 2300 pF @ 25 V - 190W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRF9Z24NSTRL

IRF9Z24NSTRL

MOSFET P-CH 55V 12A D2PAK

Infineon Technologies
2,847 -

RFQ

IRF9Z24NSTRL

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 12A (Tc) 10V 175mOhm @ 7.2A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9Z24NSTRR

IRF9Z24NSTRR

MOSFET P-CH 55V 12A D2PAK

Infineon Technologies
3,850 -

RFQ

IRF9Z24NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 12A (Tc) 10V 175mOhm @ 7.2A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 3.8W (Ta), 45W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9Z24STRL

IRF9Z24STRL

MOSFET P-CH 60V 11A D2PAK

Vishay Siliconix
2,711 -

RFQ

IRF9Z24STRL

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 11A (Tc) 10V 280mOhm @ 6.6A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 570 pF @ 25 V - 3.7W (Ta), 60W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9Z34NSTRR

IRF9Z34NSTRR

MOSFET P-CH 55V 19A D2PAK

Infineon Technologies
2,006 -

RFQ

IRF9Z34NSTRR

Ficha técnica

Tape & Reel (TR) HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 19A (Tc) 10V 100mOhm @ 10A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 620 pF @ 25 V - 3.8W (Ta), 68W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRF9Z34STRR

IRF9Z34STRR

MOSFET P-CH 60V 18A D2PAK

Vishay Siliconix
3,895 -

RFQ

IRF9Z34STRR

Ficha técnica

Tape & Reel (TR) - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 18A (Tc) 10V 140mOhm @ 11A, 10V 4V @ 250µA 34 nC @ 10 V ±20V 1100 pF @ 25 V - 3.7W (Ta), 88W (Tc) -55°C ~ 175°C (TJ) Surface Mount
IRFBC20STRL

IRFBC20STRL

MOSFET N-CH 600V 2.2A D2PAK

Vishay Siliconix
3,458 -

RFQ

IRFBC20STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 2.2A (Tc) 10V 4.4Ohm @ 1.3A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC20STRR

IRFBC20STRR

MOSFET N-CH 600V 2.2A D2PAK

Vishay Siliconix
3,604 -

RFQ

IRFBC20STRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 2.2A (Tc) 10V 4.4Ohm @ 1.3A, 10V 4V @ 250µA 18 nC @ 10 V ±20V 350 pF @ 25 V - 3.1W (Ta), 50W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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