Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
NTR4502PT1G

NTR4502PT1G

MOSFET P-CH 30V 1.13A SOT23-3

onsemi
102 -

RFQ

NTR4502PT1G

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 1.13A (Ta) 4.5V, 10V 200mOhm @ 1.95A, 10V 3V @ 250µA 10 nC @ 10 V ±20V 200 pF @ 15 V - 400mW (Tj) -55°C ~ 150°C (TJ) Surface Mount
IRFBC40LCSTRR

IRFBC40LCSTRR

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
2,091 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC40STRL

IRFBC40STRL

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
2,660 -

RFQ

IRFBC40STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC40STRR

IRFBC40STRR

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
3,026 -

RFQ

IRFBC40STRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 60 nC @ 10 V ±20V 1300 pF @ 25 V - 3.1W (Ta), 130W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBE20L

IRFBE20L

MOSFET N-CH 800V 1.8A I2PAK

Vishay Siliconix
3,149 -

RFQ

IRFBE20L

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 800 V 1.8A (Tc) 10V 6.5Ohm @ 1.1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 530 pF @ 25 V - - -55°C ~ 150°C (TJ) Through Hole
IRFBE20S

IRFBE20S

MOSFET N-CH 800V 1.8A D2PAK

Vishay Siliconix
2,668 -

RFQ

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 1.8A (Tc) 10V 6.5Ohm @ 1.1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 530 pF @ 25 V - - -55°C ~ 150°C (TJ) Surface Mount
IRFBE20STRL

IRFBE20STRL

MOSFET N-CH 800V 1.8A D2PAK

Vishay Siliconix
3,892 -

RFQ

IRFBE20STRL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 800 V 1.8A (Tc) 10V 6.5Ohm @ 1.1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 530 pF @ 25 V - - -55°C ~ 150°C (TJ) Surface Mount
IRFBE20STRR

IRFBE20STRR

MOSFET N-CH 800V 1.8A D2PAK

Vishay Siliconix
3,458 -

RFQ

IRFBE20STRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 800 V 1.8A (Tc) 10V 6.5Ohm @ 1.1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 530 pF @ 25 V - - -55°C ~ 150°C (TJ) Surface Mount
IRFBE30L

IRFBE30L

MOSFET N-CH 800V 4.1A I2PAK

Vishay Siliconix
3,613 -

RFQ

IRFBE30L

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBE30S

IRFBE30S

MOSFET N-CH 800V 4.1A D2PAK

Vishay Siliconix
3,693 -

RFQ

IRFBE30S

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBE30STRL

IRFBE30STRL

MOSFET N-CH 800V 4.1A D2PAK

Vishay Siliconix
3,625 -

RFQ

IRFBE30STRL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBE30STRR

IRFBE30STRR

MOSFET N-CH 800V 4.1A D2PAK

Vishay Siliconix
3,045 -

RFQ

IRFBE30STRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 800 V 4.1A (Tc) 10V 3Ohm @ 2.5A, 10V 4V @ 250µA 78 nC @ 10 V ±20V 1300 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBF20STRL

IRFBF20STRL

MOSFET N-CH 900V 1.7A D2PAK

Vishay Siliconix
2,348 -

RFQ

IRFBF20STRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 3.1W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBF20STRR

IRFBF20STRR

MOSFET N-CH 900V 1.7A D2PAK

Vishay Siliconix
2,609 -

RFQ

IRFBF20STRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 900 V 1.7A (Tc) 10V 8Ohm @ 1A, 10V 4V @ 250µA 38 nC @ 10 V ±20V 490 pF @ 25 V - 3.1W (Ta), 54W (Tc) -55°C ~ 150°C (TJ) Surface Mount
AOSP21321

AOSP21321

MOSFET P-CH 30V 11A 8SOIC

Alpha & Omega Semiconductor Inc.
144 -

RFQ

AOSP21321

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 11A (Ta) 4.5V, 10V 17mOhm @ 11A, 10V 2.3V @ 250µA 34 nC @ 10 V ±25V 1180 pF @ 15 V - 3.1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RUL035N02FRATR

RUL035N02FRATR

MOSFET N-CH 20V 3.5A TUMT6

Rohm Semiconductor
315 -

RFQ

RUL035N02FRATR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 Active N-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 1.5V, 4.5V 43mOhm @ 3.5A, 4.5V 1V @ 1mA 5.7 nC @ 4.5 V ±10V 460 pF @ 10 V - 1W (Ta) 150°C (TJ) Surface Mount
CPH3348-TL-W

CPH3348-TL-W

MOSFET P-CH 12V 3A 3CPH

onsemi
284 -

RFQ

CPH3348-TL-W

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 12 V 3A (Ta) 1.8V, 4.5V 70mOhm @ 1.5A, 4.5V 1.4V @ 1mA 5.6 nC @ 4.5 V ±10V 405 pF @ 6 V - 1W (Ta) 150°C (TJ) Surface Mount
FDN335N

FDN335N

MOSFET N-CH 20V 1.7A SUPERSOT3

onsemi
2,333 -

RFQ

FDN335N

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Active N-Channel MOSFET (Metal Oxide) 20 V 1.7A (Ta) 2.5V, 4.5V 70mOhm @ 1.7A, 4.5V 1.5V @ 250µA 5 nC @ 4.5 V ±8V 310 pF @ 10 V - 500mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
DMP2540UCB9-7

DMP2540UCB9-7

MOSFET P-CH 25V 4A U-WLB1515-9

Diodes Incorporated
134 -

RFQ

DMP2540UCB9-7

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete P-Channel MOSFET (Metal Oxide) 25 V 4A (Ta) 1.8V, 4.5V 40mOhm @ 2A, 4.5V 1.1V @ 250µA 6 nC @ 4.5 V -6V 450 pF @ 10 V - 1W (Ta) -55°C ~ 150°C (TJ) Surface Mount
AOD5T40P

AOD5T40P

MOSFET N-CH 400V 3.9A TO252

Alpha & Omega Semiconductor Inc.
348 -

RFQ

AOD5T40P

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Obsolete N-Channel MOSFET (Metal Oxide) 400 V 3.9A (Tc) 10V 1.45Ohm @ 1A, 10V 5V @ 250µA 9 nC @ 10 V ±30V 273 pF @ 100 V - 52W (Tc) -55°C ~ 150°C (TJ) Surface Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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