Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
DMN2011UTS-13

DMN2011UTS-13

MOSFET N-CH 20V 21A 8TSSOP

Diodes Incorporated
236 -

RFQ

DMN2011UTS-13

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 21A (Tc) 1.5V, 4.5V 11mOhm @ 7A, 4.5V 1V @ 250µA 56 nC @ 10 V ±12V 2248 pF @ 10 V - 1.3W (Ta) -55°C ~ 150°C (TJ) Surface Mount
RTQ035N03TR

RTQ035N03TR

MOSFET N-CH 30V 3.5A TSMT6

Rohm Semiconductor
699 -

RFQ

RTQ035N03TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 3.5A (Ta) 2.5V, 4.5V 54mOhm @ 3.5A, 4.5V 1.5V @ 1mA 6.4 nC @ 4.5 V ±12V 285 pF @ 10 V - 1.25W (Ta) 150°C (TJ) Surface Mount
SISH472DN-T1-GE3

SISH472DN-T1-GE3

MOSFET N-CH 30V 15A/20A PPAK

Vishay Siliconix
472 -

RFQ

SISH472DN-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 30 V 15A (Ta), 20A (Tc) 4.5V, 10V 8.9mOhm @ 15A, 10V 2.5V @ 250µA 30 nC @ 10 V ±20V 997 pF @ 15 V - 3.5W (Ta), 28W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SIRA28BDP-T1-GE3

SIRA28BDP-T1-GE3

MOSFET N-CH 30V 18A/38A PPAK SO8

Vishay Siliconix
749 -

RFQ

SIRA28BDP-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Gen IV Active N-Channel MOSFET (Metal Oxide) 30 V 18A (Ta), 38A (Tc) 4.5V, 10V 7.5mOhm @ 10A, 10V 2.4V @ 250µA 14 nC @ 10 V +20V, -16V 582 pF @ 15 V - 3.8W (Ta), 17W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PXN6R7-30QLJ

PXN6R7-30QLJ

PXN6R7-30QL/SOT8002/MLPAK33

Nexperia USA Inc.
271 -

RFQ

PXN6R7-30QLJ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchMOS™ Active N-Channel MOSFET (Metal Oxide) 30 V 12.7A (Ta), 62A (Tc) 4.5V, 10V 6.7mOhm @ 12.7A, 10V 2.2V @ 250µA 24.8 nC @ 10 V ±20V 1150 pF @ 15 V - 1.7W (Ta), 40.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
FDC8884

FDC8884

MOSFET N-CH 30V 6.5/8A SUPERSOT6

onsemi
211 -

RFQ

FDC8884

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) PowerTrench® Obsolete N-Channel MOSFET (Metal Oxide) 30 V 6.5A (Ta), 8A (Tc) 4.5V, 10V 23mOhm @ 6.5A, 10V 3V @ 250µA 7.4 nC @ 10 V ±20V 465 pF @ 15 V - 1.6W (Ta) -55°C ~ 150°C (TJ) Surface Mount
BSP89,115

BSP89,115

MOSFET N-CH 240V 375MA SOT223

Nexperia USA Inc.
862 -

RFQ

BSP89,115

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 240 V 375mA (Ta) 4.5V, 10V 5Ohm @ 340mA, 10V 2V @ 1mA - ±20V 120 pF @ 25 V - 1.5W (Ta) 150°C (TJ) Surface Mount
RUL035N02TR

RUL035N02TR

MOSFET N-CH 20V 3.5A TUMT6

Rohm Semiconductor
683 -

RFQ

RUL035N02TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 3.5A (Ta) 1.5V, 4.5V 43mOhm @ 3.5A, 4.5V 1V @ 1mA 5.7 nC @ 4.5 V ±10V 460 pF @ 10 V - 320mW (Ta) 150°C (TJ) Surface Mount
DMP3013SFV-7

DMP3013SFV-7

MOSFET P-CH 30V 12A PWRDI3333

Diodes Incorporated
2,696 -

RFQ

DMP3013SFV-7

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 12A (Ta), 35A (Tc) 4.5V, 10V 9.5mOhm @ 11.5A, 10V 3V @ 250µA 33.7 nC @ 10 V ±25V 1674 pF @ 15 V - 940mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
RQ5C030TPTL

RQ5C030TPTL

MOSFET P-CH 20V 3A TSMT3

Rohm Semiconductor
253 -

RFQ

RQ5C030TPTL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 3A (Ta) 2.5V, 4.5V 75mOhm @ 3A, 4.5V 2V @ 1mA 9.3 nC @ 4.5 V ±12V 840 pF @ 10 V - 700mW (Ta) 150°C (TJ) Surface Mount
CEDM8004 TR PBFREE

CEDM8004 TR PBFREE

MOSFET P-CH 30V 450MA SOT883VL

Central Semiconductor Corp
539 -

RFQ

CEDM8004 TR PBFREE

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 450mA (Ta) 1.8V, 4.5V 1.1Ohm @ 430mA, 4.5V 1V @ 250µA 0.88 nC @ 4.5 V 8V 55 pF @ 25 V - 100mW (Ta) -65°C ~ 150°C (TJ) Surface Mount
RQ6E050AJTCR

RQ6E050AJTCR

MOSFET N-CH 30V 5A TSMT6

Rohm Semiconductor
466 -

RFQ

RQ6E050AJTCR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 5A (Ta) 2.5V, 4.5V 35mOhm @ 5A, 4.5V 1.5V @ 1mA 4.7 nC @ 4.5 V ±12V 520 pF @ 15 V - 950mW (Ta) 150°C (TJ) Surface Mount
IRFI610G

IRFI610G

MOSFET N-CH 200V 2.6A TO220-3

Vishay Siliconix
2,318 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 200 V 2.6A (Ta) - - - - - - - - - Through Hole
IRFI710G

IRFI710G

MOSFET N-CH 400V 1.6A TO220-3

Vishay Siliconix
2,765 -

RFQ

Tube - Active N-Channel MOSFET (Metal Oxide) 400 V 1.6A (Ta) - - 4V @ 250µA - - - - - - Through Hole
IRFI9520N

IRFI9520N

MOSFET P-CH 100V 5.5A TO220-3

Vishay Siliconix
2,872 -

RFQ

IRFI9520N

Ficha técnica

Tube - Active P-Channel MOSFET (Metal Oxide) 100 V 5.5A (Tc) 10V 480mOhm @ 4A, 10V 4V @ 250µA 27 nC @ 10 V ±20V 350 pF @ 25 V - 30W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI9530N

IRFI9530N

MOSFET P-CH 100V 7.7A TO220AB FP

Infineon Technologies
2,065 -

RFQ

IRFI9530N

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 100 V 7.7A (Ta) - 300mOhm @ 4.6A, 10V 4V @ 250µA 38 nC @ 10 V - 860 pF @ 25 V - - - Through Hole
IRFI9610G

IRFI9610G

MOSFET P-CH 200V 2A TO220-3

Vishay Siliconix
3,710 -

RFQ

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 200 V 2A (Tc) 10V 3Ohm @ 1.2A, 10V 4V @ 250µA 13 nC @ 10 V ±20V 180 pF @ 25 V - 27W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFI9Z14G

IRFI9Z14G

MOSFET P-CH 60V 5.3A TO220-3

Vishay Siliconix
2,353 -

RFQ

Tube - Obsolete P-Channel MOSFET (Metal Oxide) 60 V 5.3A (Tc) 10V 500mOhm @ 3.2A, 10V 4V @ 250µA 12 nC @ 10 V ±20V 270 pF @ 25 V - 27W (Tc) -55°C ~ 175°C (TJ) Through Hole
IRFI9Z24N

IRFI9Z24N

MOSFET P-CH 55V 9.5A TO220AB FP

Infineon Technologies
2,635 -

RFQ

IRFI9Z24N

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 9.5A (Tc) 10V 175mOhm @ 5.4A, 10V 4V @ 250µA 19 nC @ 10 V ±20V 350 pF @ 25 V - 29W (Tc) - Through Hole
IRFI9Z34N

IRFI9Z34N

MOSFET P-CH 55V 14A TO220AB FP

Infineon Technologies
2,118 -

RFQ

IRFI9Z34N

Ficha técnica

Tube HEXFET® Obsolete P-Channel MOSFET (Metal Oxide) 55 V 14A (Tc) 10V 100mOhm @ 7.8A, 10V 4V @ 250µA 35 nC @ 10 V ±20V 620 pF @ 25 V - 37W (Tc) - Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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