Transistores - FETs, MOSFETs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus FETType Technology DraintoSourceVoltage(Vdss) Current-ContinuousDrain(Id)@25°C DriveVoltage(MaxRdsOnMinRdsOn) RdsOn(Max)@IdVgs Vgs(th)(Max)@Id GateCharge(Qg)(Max)@Vgs Vgs(Max) InputCapacitance(Ciss)(Max)@Vds FETFeature PowerDissipation(Max) OperatingTemperature MountingType
IRFBC30AL

IRFBC30AL

MOSFET N-CH 600V 3.6A I2PAK

Vishay Siliconix
3,648 -

RFQ

IRFBC30AL

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4.5V @ 250µA 23 nC @ 10 V ±30V 510 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC30ASTRL

IRFBC30ASTRL

MOSFET N-CH 600V 3.6A D2PAK

Vishay Siliconix
3,427 -

RFQ

IRFBC30ASTRL

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4.5V @ 250µA 23 nC @ 10 V ±30V 510 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC30ASTRR

IRFBC30ASTRR

MOSFET N-CH 600V 3.6A D2PAK

Vishay Siliconix
2,191 -

RFQ

IRFBC30ASTRR

Ficha técnica

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4.5V @ 250µA 23 nC @ 10 V ±30V 510 pF @ 25 V - 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC30STRL

IRFBC30STRL

MOSFET N-CH 600V 3.6A D2PAK

Vishay Siliconix
2,675 -

RFQ

IRFBC30STRL

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC30STRR

IRFBC30STRR

MOSFET N-CH 600V 3.6A D2PAK

Vishay Siliconix
2,802 -

RFQ

IRFBC30STRR

Ficha técnica

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 3.6A (Tc) 10V 2.2Ohm @ 2.2A, 10V 4V @ 250µA 31 nC @ 10 V ±20V 660 pF @ 25 V - 3.1W (Ta), 74W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC40AL

IRFBC40AL

MOSFET N-CH 600V 6.2A I2PAK

Vishay Siliconix
3,985 -

RFQ

IRFBC40AL

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 1036 pF @ 25 V - - - Through Hole
IRFBC40ASTRL

IRFBC40ASTRL

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
3,519 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 1036 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC40ASTRR

IRFBC40ASTRR

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
3,638 -

RFQ

Tape & Reel (TR) - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 42 nC @ 10 V ±30V 1036 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC40LCL

IRFBC40LCL

MOSFET N-CH 600V 6.2A I2PAK

Vishay Siliconix
3,636 -

RFQ

IRFBC40LCL

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC40LC

IRFBC40LC

MOSFET N-CH 600V 6.2A TO220AB

Vishay Siliconix
3,264 -

RFQ

IRFBC40LC

Ficha técnica

Tube - Obsolete N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Through Hole
IRFBC40LCS

IRFBC40LCS

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
3,411 -

RFQ

IRFBC40LCS

Ficha técnica

Tube - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
IRFBC40LCSTRL

IRFBC40LCSTRL

MOSFET N-CH 600V 6.2A D2PAK

Vishay Siliconix
3,265 -

RFQ

Tape & Reel (TR) - Active N-Channel MOSFET (Metal Oxide) 600 V 6.2A (Tc) 10V 1.2Ohm @ 3.7A, 10V 4V @ 250µA 39 nC @ 10 V ±30V 1100 pF @ 25 V - 125W (Tc) -55°C ~ 150°C (TJ) Surface Mount
NXV100XPR

NXV100XPR

NXV100XP/SOT23/TO-236AB

Nexperia USA Inc.
180 -

RFQ

NXV100XPR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 30 V 1.5A (Ta) 1.8V, 4.5V 140mOhm @ 1.5A, 4.5V 900mV @ 250µA 6.4 nC @ 4.5 V ±12V 354 pF @ 15 V - 340mW (Ta), 2.1W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI2303CDS-T1-BE3

SI2303CDS-T1-BE3

MOSFET P-CH 30V 1.9A/2.7A SOT23

Vishay Siliconix
904 -

RFQ

SI2303CDS-T1-BE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active P-Channel MOSFET (Metal Oxide) 30 V 1.9A (Ta), 2.7A (Tc) 4.5V, 10V 190mOhm @ 1.9A, 10V 3V @ 250µA 8 nC @ 10 V ±20V 155 pF @ 15 V - 1W (Ta), 2.3W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMXB40UNEZ

PMXB40UNEZ

MOSFET N-CH 12V 3.2A DFN1010D-3

Nexperia USA Inc.
425 -

RFQ

PMXB40UNEZ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 12 V 3.2A (Ta) 1.2V, 4.5V 45mOhm @ 3.2A, 4.5V 900mV @ 250µA 11.6 nC @ 4.5 V ±8V 556 pF @ 10 V - 400mW (Ta), 8.33W (Tc) -55°C ~ 150°C (TJ) Surface Mount
DMP3130L-7

DMP3130L-7

MOSFET P-CH 30V 3.5A SOT23-3

Diodes Incorporated
335 -

RFQ

DMP3130L-7

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Not For New Designs P-Channel MOSFET (Metal Oxide) 30 V 3.5A (Ta) 2.5V, 10V 77mOhm @ 4.2A, 10V 1.3V @ 250µA 12 nC @ 10 V ±12V 432 pF @ 15 V - 700mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
PMX100UNZ

PMX100UNZ

PMX100UN/SOT8013/DFN0603-3

Nexperia USA Inc.
338 -

RFQ

PMX100UNZ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 20 V 1.3A (Ta) 1.8V, 4.5V 210mOhm @ 1A, 4.5V 900mV @ 250µA 2.3 nC @ 4.5 V ±12V 144 pF @ 10 V - 300mW (Ta), 4.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
PMZB950UPEYL

PMZB950UPEYL

MOSFET P-CH 20V 500MA DFN1006B-3

Nexperia USA Inc.
195 -

RFQ

PMZB950UPEYL

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active P-Channel MOSFET (Metal Oxide) 20 V 500mA (Ta) 1.2V, 4.5V 1.4Ohm @ 500mA, 4.5V 950mV @ 250µA 2.1 nC @ 4.5 V ±8V 43 pF @ 10 V - 360mW (Ta), 2.7W (Tc) -55°C ~ 150°C (TJ) Surface Mount
SI1032X-T1-GE3

SI1032X-T1-GE3

MOSFET N-CH 20V 200MA SC89-3

Vishay Siliconix
150 -

RFQ

SI1032X-T1-GE3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchFET® Active N-Channel MOSFET (Metal Oxide) 20 V 200mA (Ta) 1.5V, 4.5V 5Ohm @ 200mA, 4.5V 1.2V @ 250µA 0.75 nC @ 4.5 V ±6V - - 300mW (Ta) -55°C ~ 150°C (TJ) Surface Mount
MCM13N03-TP

MCM13N03-TP

N-CHANNEL MOSFET,DFN2020-6LE

Micro Commercial Co
130 -

RFQ

MCM13N03-TP

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active N-Channel MOSFET (Metal Oxide) 30 V 13A 4.5V, 10V 12mOhm @ 8A, 10V 2.5V @ 250µA 23.6 nC @ 10 V ±20V 1015 pF @ 15 V - 2.9W -55°C ~ 150°C (TJ) Surface Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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