Transistores - IGBTs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
RGTH00TK65GC11

RGTH00TK65GC11

IGBT

Rohm Semiconductor
408 -

RFQ

RGTH00TK65GC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 35 A 200 A 2.1V @ 15V, 50A 72 W - Standard 94 nC 39ns/143ns 400V, 50A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
RGTV00TK65GVC11

RGTV00TK65GVC11

650V 50A FIELD STOP TRENCH IGBT

Rohm Semiconductor
450 -

RFQ

RGTV00TK65GVC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 45 A 200 A 1.9V @ 15V, 50A 94 W 1.17mJ (on), 940µJ (off) Standard 104 nC 41ns/142ns 400V, 50A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
IKW25N120T2FKSA1

IKW25N120T2FKSA1

IGBT TRENCH 1200V 50A TO247-3

Infineon Technologies
336 -

RFQ

IKW25N120T2FKSA1

Ficha técnica

Tube TrenchStop® Active Trench 1200 V 50 A 100 A 2.2V @ 15V, 25A 349 W 2.9mJ Standard 120 nC 27ns/265ns 600V, 25A, 16.4Ohm, 15V 195 ns -40°C ~ 175°C (TJ) Through Hole
APT25GR120BD15

APT25GR120BD15

IGBT 1200V 75A 521W TO247

Microchip Technology
122 -

RFQ

APT25GR120BD15

Ficha técnica

Tube - Active NPT 1200 V 75 A 100 A 3.2V @ 15V, 25A 521 W 742µJ (on), 427µJ (off) Standard 203 nC 16ns/122ns 600V, 25A, 4.3Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
RGTH00TK65DGC11

RGTH00TK65DGC11

IGBT

Rohm Semiconductor
450 -

RFQ

RGTH00TK65DGC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 35 A 200 A 2.1V @ 15V, 50A 72 W - Standard 94 nC 39ns/143ns 400V, 50A, 10Ohm, 15V 225 ns -40°C ~ 175°C (TJ) Through Hole
RGW00TK65DGVC11

RGW00TK65DGVC11

650V 50A FIELD STOP TRENCH IGBT

Rohm Semiconductor
315 -

RFQ

RGW00TK65DGVC11

Ficha técnica

Tube - Active Trench Field Stop 650 V 45 A 200 A 1.9V @ 15V, 50A 89 W 1.18mJ (on), 960µJ (off) Standard 141 nC 52ns/180ns 400V, 50A, 10Ohm, 15V 95 ns -40°C ~ 175°C (TJ) Through Hole
IXDH20N120

IXDH20N120

IGBT 1200V 38A 200W TO247AD

IXYS
2,397 -

RFQ

IXDH20N120

Ficha técnica

Tube - Active NPT 1200 V 38 A 50 A 3V @ 15V, 20A 200 W 3.1mJ (on), 2.4mJ (off) Standard 70 nC - 600V, 20A, 82Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXYH60N90C3

IXYH60N90C3

IGBT 900V 140A 750W C3 TO-247

IXYS
131 -

RFQ

IXYH60N90C3

Ficha técnica

Tube GenX3™, XPT™ Active - 900 V 140 A 310 A 2.7V @ 15V, 60A 750 W 2.7mJ (on), 1.55mJ (off) Standard 107 nC 30ns/87ns 450V, 60A, 3Ohm, 15V - -55°C ~ 175°C (TJ) Through Hole
IXDH20N120D1

IXDH20N120D1

IGBT 1200V 38A 200W TO247AD

IXYS
298 -

RFQ

IXDH20N120D1

Ficha técnica

Tube - Active NPT 1200 V 38 A 50 A 3V @ 15V, 20A 200 W 3.1mJ (on), 2.4mJ (off) Standard 70 nC - 600V, 20A, 82Ohm, 15V 40 ns -55°C ~ 150°C (TJ) Through Hole
IXYH16N170CV1

IXYH16N170CV1

IGBT 1.7KV 40A TO247

IXYS
2,411 -

RFQ

IXYH16N170CV1

Ficha técnica

Tube XPT™ Active - 1700 V 40 A 100 A 3.8V @ 15V, 16A 310 W 2.1mJ (on), 1.5mJ (off) Standard 56 nC 11ns/140ns 850V, 16A, 10Ohm, 15V 150 ns -55°C ~ 175°C (TJ) Through Hole
APT33GF120BRG

APT33GF120BRG

IGBT 1200V 52A 297W TO247

Microchip Technology
212 -

RFQ

APT33GF120BRG

Ficha técnica

Tube - Active NPT 1200 V 52 A 104 A 3.2V @ 15V, 25A 297 W 2.8mJ (on), 2.8mJ (off) Standard 170 nC 25ns/210ns - - -55°C ~ 150°C (TJ) Through Hole
IXYH24N170CV1

IXYH24N170CV1

IGBT 1.7KV 58A TO247

IXYS
721 -

RFQ

Tube XPT™ Active - 1700 V 58 A 140 A 4V @ 15V, 24A 500 W 3.6mJ (on), 1.76mJ (off) Standard 96 nC 16ns/155ns 850V, 24A, 5Ohm, 15V 170 ns -55°C ~ 175°C (TJ) Through Hole
APT50GN120L2DQ2G

APT50GN120L2DQ2G

IGBT 1200V 134A 543W TO264

Microchip Technology
162 -

RFQ

APT50GN120L2DQ2G

Ficha técnica

Tube - Active NPT, Trench Field Stop 1200 V 134 A 150 A 2.1V @ 15V, 50A 543 W 4495µJ (off) Standard 315 nC 28ns/320ns 800V, 50A, 2.2Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXGR72N60B3H1

IXGR72N60B3H1

IGBT 600V 75A 200W ISOPLUS247

IXYS
2,731 -

RFQ

IXGR72N60B3H1

Ficha técnica

Tube GenX3™ Active PT 600 V 75 A 450 A 1.8V @ 15V, 60A 200 W 1.4mJ (on), 1mJ (off) Standard 225 nC 31ns/152ns 480V, 50A, 3Ohm, 15V 140 ns -55°C ~ 150°C (TJ) Through Hole
HGTG40N60A4

HGTG40N60A4

IGBT 600V 75A TO247-3

onsemi
3,179 -

RFQ

HGTG40N60A4

Ficha técnica

Tube - Not For New Designs - 600 V 75 A 300 A 2.7V @ 15V, 40A 625 W 400µJ (on), 370µJ (off) Standard 350 nC 25ns/145ns 390V, 40A, 2.2Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IXBH20N300

IXBH20N300

IGBT 3000V 50A 250W TO247

IXYS
126 -

RFQ

IXBH20N300

Ficha técnica

Tube BIMOSFET™ Active - 3000 V 50 A 140 A 3.2V @ 15V, 20A 250 W - Standard 105 nC - - 1.35 µs -55°C ~ 150°C (TJ) Through Hole
IXYN30N170CV1

IXYN30N170CV1

1700V/85A HIGH VOLTAGE XPT IGBT

IXYS
564 -

RFQ

IXYN30N170CV1

Ficha técnica

Tube XPT™ Active - 1700 V 88 A 275 A 3.7V @ 15V, 30A 680 W 5.9mJ (on), 3.3mJ (off) Standard 140 nC 28ns/150ns 850V, 30A, 2.7Ohm, 15V 160 ns -55°C ~ 175°C (TJ) Chassis Mount
FGY160T65SPD-F085

FGY160T65SPD-F085

650V FS GEN3 TRENCH IGBT

onsemi
450 -

RFQ

FGY160T65SPD-F085

Ficha técnica

Tube Automotive, AEC-Q101 Active Trench Field Stop 650 V 240 A 480 A 2.05V @ 15V, 160A 882 W 12.4mJ (on), 5.7mJ (off) Standard - 53ns/98ns 400V, 160A, 15V 132 ns -55°C ~ 175°C (TJ) Through Hole
IXYH24N170C

IXYH24N170C

IGBT 1.7KV 58A TO247-3

IXYS
287 -

RFQ

IXYH24N170C

Ficha técnica

Tube XPT™ Active - 1700 V 58 A 145 A 3.8V @ 15V, 20A 500 W 4.9mJ (on), 1.95mJ (off) Standard 96 nC 12ns/160ns 960V, 30A, 15Ohm, 15V 30 ns -55°C ~ 175°C (TJ) Through Hole
AOK40B65M3

AOK40B65M3

IGBT 650V 40A TO247

Alpha & Omega Semiconductor Inc.
199 -

RFQ

AOK40B65M3

Ficha técnica

Tube Alpha IGBT™ Active - 650 V 80 A 120 A 2.45V @ 15V, 40A 300 W 1.3mJ (on), 500µJ (off) Standard 59 nC 40ns/125ns 400V, 40A, 7.5Ohm, 15V 365 ns -55°C ~ 175°C (TJ) Through Hole
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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