Transistores - IGBTs - Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus IGBTType Voltage-CollectorEmitterBreakdown(Max) Current-Collector(Ic)(Max) Current-CollectorPulsed(Icm) Vce(on)(Max)@VgeIc Power-Max SwitchingEnergy InputType GateCharge Td(on/off)@25°C TestCondition ReverseRecoveryTime(trr) OperatingTemperature MountingType
MGP19N35CL

MGP19N35CL

IGBT, 19A, 380V, N-CHANNEL

onsemi
2,594 -

RFQ

MGP19N35CL

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
MGP20N14CL

MGP20N14CL

IGBT, 20A, 135V, N-CHANNEL

onsemi
2,369 -

RFQ

MGP20N14CL

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FGS15N40LTF

FGS15N40LTF

IGBT, 400V, N-CHANNEL

Fairchild Semiconductor
2,061 -

RFQ

FGS15N40LTF

Ficha técnica

Bulk - Obsolete Trench 400 V - 130 A 8V @ 4V, 130A 2 W - Standard - - - - -40°C ~ 150°C (TJ) Surface Mount
SGS13N60UFDTU

SGS13N60UFDTU

IGBT, 13A, 600V, N-CHANNEL

Fairchild Semiconductor
3,200 -

RFQ

SGS13N60UFDTU

Ficha técnica

Tube - Obsolete - 600 V 13 A 52 A 2.6V @ 15V, 6.5A 45 W 85µJ (on), 95µJ (off) Standard 25 nC 20ns/70ns 300V, 6.5A, 50Ohm, 15V 55 ns -55°C ~ 150°C (TJ) Through Hole
IRG4BC30FD-SPBF

IRG4BC30FD-SPBF

IGBT, 31A I(C), 600V V(BR)CES, N

International Rectifier
3,815 -

RFQ

IRG4BC30FD-SPBF

Ficha técnica

Bulk - Active - 600 V 31 A 124 A 1.8V @ 15V, 17A 100 W 630µJ (on), 1.39mJ (off) Standard 51 nC 42ns/230ns 480V, 17A, 23Ohm, 15V 42 ns -55°C ~ 150°C (TJ) Surface Mount
IRGP4640PBF

IRGP4640PBF

IGBT

International Rectifier
3,478 -

RFQ

IRGP4640PBF

Ficha técnica

Bulk - Active - 600 V 65 A 72 A 1.9V @ 15V, 24A 250 W 100µJ (on), 600µJ (off) Standard 75 nC 40ns/105ns 400V, 24A, 10Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
FGA20S125P

FGA20S125P

IGBT, 40A, 1250V, N-CHANNEL

Fairchild Semiconductor
3,942 -

RFQ

FGA20S125P

Ficha técnica

Tube - Obsolete Trench Field Stop 1250 V 40 A 60 A 2.5V @ 15V, 20A 250 W - Standard 129 nC - - - - Through Hole
AIGB30N65F5ATMA1

AIGB30N65F5ATMA1

DISCRETE SWITCHES

Infineon Technologies
3,276 -

RFQ

AIGB30N65F5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active NPT 650 V 30 A - - - - Standard - - - - - Surface Mount
AIGB30N65H5ATMA1

AIGB30N65H5ATMA1

DISCRETE SWITCHES

Infineon Technologies
2,553 -

RFQ

AIGB30N65H5ATMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) - Active NPT 650 V 30 A - - - - Standard - - - - - Surface Mount
IRG4BC40KPBF

IRG4BC40KPBF

IRG4BC40 - DISCRETE IGBT WITHOUT

International Rectifier
2,940 -

RFQ

IRG4BC40KPBF

Ficha técnica

Bulk * Active - - - - - - - - - - - - - -
FGA30N65SMD

FGA30N65SMD

INSULATED GATE BIPOLAR TRANSISTO

Fairchild Semiconductor
3,039 -

RFQ

FGA30N65SMD

Ficha técnica

Bulk - Active Field Stop 650 V 60 A 90 A 2.5V @ 15V, 30A 300 W 716µJ (on), 208µJ (off) Standard 87 nC 14ns/102ns 400V, 30A, 6Ohm, 15V 35 ns -55°C ~ 175°C (TJ) Through Hole
IRG4BC40W-LPBF

IRG4BC40W-LPBF

IRG4BC40 - DISCRETE IGBT WITHOUT

International Rectifier
2,374 -

RFQ

IRG4BC40W-LPBF

Ficha técnica

Bulk - Obsolete - 600 V 40 A 160 A 2.5V @ 15V, 20A 160 W 110µJ (on), 230µJ (off) Standard 98 nC 27ns/100ns 480V, 20A, 10Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IGW15T120

IGW15T120

IGW15T120 - DISCRETE IGBT WITHOU

Infineon Technologies
2,755 -

RFQ

IGW15T120

Ficha técnica

Bulk - Active - 1200 V 30 A 45 A 2.2V @ 15V, 15A 110 W 1.3mJ (on), 1.4mJ (off) Standard 85 nC 50ns/520ns 600V, 15A, 56Ohm, 15V - -40°C ~ 150°C (TJ) Through Hole
SGS10N60RUFTU

SGS10N60RUFTU

IGBT, 16A, 600V, N-CHANNEL

Fairchild Semiconductor
2,650 -

RFQ

SGS10N60RUFTU

Ficha técnica

Tube - Obsolete - 600 V 16 A 30 A 2.8V @ 15V, 10A 55 W 141µJ (on), 215µJ (off) Standard 30 nC 15ns/36ns 300V, 10A, 20Ohm, 15V - -55°C ~ 150°C (TJ) Through Hole
IGP01N120H2

IGP01N120H2

POWER BIPOLAR TRANSISTOR NPN

Infineon Technologies
2,988 -

RFQ

IGP01N120H2

Ficha técnica

Bulk - Active - 1200 V 3.2 A 3.5 A 2.8V @ 15V, 1A 28 W 140µJ Standard 8.6 nC 13ns/370ns 800V, 1A, 241Ohm, 15V - -40°C ~ 150°C (TJ) Through Hole
IGP06N60TATMA1

IGP06N60TATMA1

IGBT WITHOUT ANTI-PARALLEL DIODE

Infineon Technologies
2,991 -

RFQ

IGP06N60TATMA1

Ficha técnica

Bulk * Active Trench Field Stop 600 V 12 A 18 A 2.05V @ 15V, 6A 88 W - Standard 42 nC 9ns/130ns 400V, 6A, 23Ohm, 15V - -40°C ~ 175°C (TJ) Through Hole
SKB02N60

SKB02N60

IGBT, 6A, 600V, N-CHANNEL

Infineon Technologies
3,988 -

RFQ

SKB02N60

Ficha técnica

Bulk - Active NPT 600 V 6 A 12 A 2.4V @ 15V, 2A 30 W 64µJ Standard 14 nC 20ns/259ns 400V, 2A, 118Ohm, 15V 130 ns -55°C ~ 150°C (TJ) Surface Mount
NGB8206ANT4G

NGB8206ANT4G

IGBT, 20A, 390V, N-CHANNEL

onsemi
2,969 -

RFQ

NGB8206ANT4G

Ficha técnica

Bulk - Active - 390 V 20 A 50 A 1.9V @ 4.5V, 20A 150 W - Logic - -/5µs 300V, 9A, 1kOhm, 5V - -55°C ~ 175°C (TJ) Surface Mount
IGD10N65T6ARMA1

IGD10N65T6ARMA1

IGD10N65T6ARMA1

Infineon Technologies
2,879 -

RFQ

IGD10N65T6ARMA1

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) TrenchStop™ Not For New Designs Trench Field Stop 650 V 23 A 42.5 A 1.9V @ 15V, 8.5A 75 W 200µJ (on), 70µJ (off) Standard 27 nC 30ns/106ns 400V, 8.5A, 47Ohm, 15V - -40°C ~ 175°C (TJ) Surface Mount
TIG064E8-TL-H-ON

TIG064E8-TL-H-ON

N-CHANNEL IGBT FOR LIGHT-CONTROL

onsemi
3,489 -

RFQ

TIG064E8-TL-H-ON

Ficha técnica

Bulk - Active - 400 V - 150 A 7V @ 2.5V, 100A - - Standard - - - - 150°C (TJ) Surface Mount
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1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

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