Diodos - Retificadores de Ponte

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
TT6JL

TT6JL

MEDIUM/HIGH POWER BRIDGE TTL T&R

Diodes Incorporated
2,856 -

RFQ

TT6JL

Ficha técnica

Tape & Reel (TR) - Active Single Phase Standard 600 V 6 A 0.9 V @ 3 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
GBLA06-M3/51

GBLA06-M3/51

BRIDGE RECT 1PHASE 600V 4A GBL

Vishay General Semiconductor - Diodes Division
3,146 -

RFQ

GBLA06-M3/51

Ficha técnica

Tray - Active Single Phase Standard 600 V 4 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA08-M3/51

GBLA08-M3/51

BRIDGE RECT 1PHASE 800V 4A GBL

Vishay General Semiconductor - Diodes Division
3,160 -

RFQ

GBLA08-M3/51

Ficha técnica

Tray - Active Single Phase Standard 800 V 4 A 1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA10-M3/51

GBLA10-M3/51

BRIDGE RECT 1PHASE 1KV 4A GBL

Vishay General Semiconductor - Diodes Division
2,364 -

RFQ

GBLA10-M3/51

Ficha técnica

Tray - Active Single Phase Standard 1 kV 4 A 1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA06-M3/45

GBLA06-M3/45

BRIDGE RECT 1PHASE 600V 4A GBL

Vishay General Semiconductor - Diodes Division
2,340 -

RFQ

GBLA06-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 4 A 1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBLA08-M3/45

GBLA08-M3/45

BRIDGE RECT 1PHASE 800V 4A GBL

Vishay General Semiconductor - Diodes Division
2,606 -

RFQ

GBLA08-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 4 A 1 V @ 4 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
DF1502S

DF1502S

BRIDGE RECT 1P 200V 1.5A DF-S

Diodes Incorporated
2,013 -

RFQ

DF1502S

Ficha técnica

Bulk - Active Single Phase Standard 200 V 1.5 A 1.1 V @ 1.5 A 10 µA @ 100 V -65°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
KBU10005

KBU10005

BRIDGE RECT 1PHASE 50V 10A KBU

GeneSiC Semiconductor
2,245 -

RFQ

KBU10005

Ficha técnica

Bulk - Active Single Phase Standard 50 V 10 A 1.05 V @ 10 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU1001

KBU1001

BRIDGE RECT 1PHASE 100V 10A KBU

GeneSiC Semiconductor
3,188 -

RFQ

KBU1001

Ficha técnica

Bulk - Active Single Phase Standard 100 V 10 A 1.05 V @ 10 A 10 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU1002

KBU1002

BRIDGE RECT 1PHASE 200V 10A KBU

GeneSiC Semiconductor
3,202 -

RFQ

KBU1002

Ficha técnica

Bulk - Active Single Phase Standard 200 V 10 A 1.05 V @ 10 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU1004

KBU1004

BRIDGE RECT 1PHASE 400V 10A KBU

GeneSiC Semiconductor
2,449 -

RFQ

KBU1004

Ficha técnica

Bulk - Active Single Phase Standard 400 V 10 A 1.05 V @ 10 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU1006

KBU1006

BRIDGE RECT 1PHASE 600V 10A KBU

GeneSiC Semiconductor
2,636 -

RFQ

KBU1006

Ficha técnica

Bulk - Active Single Phase Standard 600 V 10 A 1.05 V @ 10 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU1008

KBU1008

BRIDGE RECT 1PHASE 800V 10A KBU

GeneSiC Semiconductor
3,833 -

RFQ

KBU1008

Ficha técnica

Bulk - Active Single Phase Standard 800 V 10 A 1.05 V @ 10 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
KBU1010

KBU1010

BRIDGE RECT 1PHASE 1KV 10A KBU

GeneSiC Semiconductor
3,260 -

RFQ

KBU1010

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 10 A 1.05 V @ 10 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBU
G3SBA20-M3/45

G3SBA20-M3/45

BRIDGE RECT 1PHASE 200V 2.3A GBU

Vishay General Semiconductor - Diodes Division
2,799 -

RFQ

G3SBA20-M3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 2.3 A 1 V @ 2 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G3SBA20-M3/51

G3SBA20-M3/51

BRIDGE RECT 1PHASE 200V 2.3A GBU

Vishay General Semiconductor - Diodes Division
2,215 -

RFQ

G3SBA20-M3/51

Ficha técnica

Tray - Active Single Phase Standard 200 V 2.3 A 1 V @ 2 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G3SBA80-M3/45

G3SBA80-M3/45

BRIDGE RECT 1PHASE 800V 2.3A GBU

Vishay General Semiconductor - Diodes Division
2,680 -

RFQ

G3SBA80-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 2.3 A 1 V @ 2 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G3SBA80-M3/51

G3SBA80-M3/51

BRIDGE RECT 1PHASE 800V 2.3A GBU

Vishay General Semiconductor - Diodes Division
2,752 -

RFQ

G3SBA80-M3/51

Ficha técnica

Tray - Active Single Phase Standard 800 V 2.3 A 1 V @ 2 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
KBJ401G

KBJ401G

BRIDGE RECT 1PHASE 100V 4A KBJ

Diodes Incorporated
3,721 -

RFQ

KBJ401G

Ficha técnica

Tube - Active Single Phase Standard 100 V 4 A 1 V @ 2 A 5 µA @ 100 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBJ15005

GBJ15005

BRIDGE RECT 1PHASE 50V 15A GBJ

SMC Diode Solutions
2,351 -

RFQ

GBJ15005

Ficha técnica

Tube - Active Single Phase Standard 50 V 15 A 1.1 V @ 7.5 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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