Diodos - Retificadores de Ponte

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
BR108-BP

BR108-BP

BRIDGE RECT 1PHASE 800V 10A PB-6

Micro Commercial Co
2,823 -

RFQ

BR108-BP

Ficha técnica

Bulk - Active Single Phase Standard 800 V 10 A 1.1 V @ 5 A 10 µA @ 800 V -55°C ~ 150°C Through Hole 4-Square, PB-6
GBJ20005

GBJ20005

BRIDGE RECT 1PHASE 50V 20A GBJ

SMC Diode Solutions
2,764 -

RFQ

GBJ20005

Ficha técnica

Tube - Active Single Phase Standard 50 V 20 A 1.1 V @ 20 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP
GBJ2001

GBJ2001

BRIDGE RECT 1PHASE 100V 20A GBJ

SMC Diode Solutions
3,354 -

RFQ

GBJ2001

Ficha técnica

Tube - Active Single Phase Standard 100 V 20 A 1.1 V @ 20 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP
GBJ2002

GBJ2002

BRIDGE RECT 1PHASE 200V 20A GBJ

SMC Diode Solutions
2,477 -

RFQ

GBJ2002

Ficha técnica

Tube - Active Single Phase Standard 200 V 20 A 1.1 V @ 20 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP
GBJ2004

GBJ2004

BRIDGE RECT 1PHASE 400V 20A GBJ

SMC Diode Solutions
2,324 -

RFQ

GBJ2004

Ficha técnica

Tube - Active Single Phase Standard 400 V 20 A 1.1 V @ 20 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP
GBJ2008

GBJ2008

BRIDGE RECT 1PHASE 800V 20A GBJ

SMC Diode Solutions
2,188 -

RFQ

GBJ2008

Ficha técnica

Tube - Active Single Phase Standard 800 V 20 A 1.1 V @ 20 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-ESIP
GBL04-M3/45

GBL04-M3/45

4A 400V GPP INLINE BRIDGE

Vishay General Semiconductor - Diodes Division
3,967 -

RFQ

GBL04-M3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 3 A 1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL01-M3/51

GBL01-M3/51

BRIDGE RECT 1PHASE 100V 4A GBL

Vishay General Semiconductor - Diodes Division
3,270 -

RFQ

GBL01-M3/51

Ficha técnica

Tray - Active Single Phase Standard 100 V 4 A 1.1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL02-M3/51

GBL02-M3/51

BRIDGE RECT 1PHASE 200V 4A GBL

Vishay General Semiconductor - Diodes Division
2,452 -

RFQ

GBL02-M3/51

Ficha técnica

Tray - Active Single Phase Standard 200 V 4 A 1.1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL04-M3/51

GBL04-M3/51

BRIDGE RECT 1PHASE 400V 4A GBL

Vishay General Semiconductor - Diodes Division
2,449 -

RFQ

GBL04-M3/51

Ficha técnica

Tray - Active Single Phase Standard 400 V 4 A 1.1 V @ 4 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL06-M3/51

GBL06-M3/51

BRIDGE RECT 1PHASE 600V 4A GBL

Vishay General Semiconductor - Diodes Division
2,891 -

RFQ

GBL06-M3/51

Ficha técnica

Tray - Active Single Phase Standard 600 V 4 A 1.1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL08-M3/51

GBL08-M3/51

BRIDGE RECT 1PHASE 800V 4A GBL

Vishay General Semiconductor - Diodes Division
3,105 -

RFQ

GBL08-M3/51

Ficha técnica

Tray - Active Single Phase Standard 800 V 4 A 1 V @ 2 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL10-M3/51

GBL10-M3/51

BRIDGE RECT 1PHASE 1KV 4A GBL

Vishay General Semiconductor - Diodes Division
2,851 -

RFQ

GBL10-M3/51

Ficha técnica

Tray - Active Single Phase Standard 1 kV 4 A 1.1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL01-M3/45

GBL01-M3/45

BRIDGE RECT 1PHASE 100V 4A GBL

Vishay General Semiconductor - Diodes Division
2,943 -

RFQ

GBL01-M3/45

Ficha técnica

Tube - Active Single Phase Standard 100 V 4 A 1.1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL02-M3/45

GBL02-M3/45

BRIDGE RECT 1PHASE 200V 4A GBL

Vishay General Semiconductor - Diodes Division
2,162 -

RFQ

GBL02-M3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 4 A 1.1 V @ 4 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL06-M3/45

GBL06-M3/45

BRIDGE RECT 1PHASE 600V 4A GBL

Vishay General Semiconductor - Diodes Division
3,980 -

RFQ

GBL06-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 4 A 1.1 V @ 4 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL08-M3/45

GBL08-M3/45

BRIDGE RECT 1PHASE 800V 4A GBL

Vishay General Semiconductor - Diodes Division
3,414 -

RFQ

GBL08-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 4 A 1 V @ 2 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
GBL10-M3/45

GBL10-M3/45

BRIDGE RECT 1PHASE 1KV 4A GBL

Vishay General Semiconductor - Diodes Division
3,132 -

RFQ

GBL10-M3/45

Ficha técnica

Tube - Active Single Phase Standard 1 kV 4 A 1.1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBL
BR805

BR805

BRIDGE RECT 1PHASE 50V 8A BR-8

GeneSiC Semiconductor
3,417 -

RFQ

BR805

Ficha técnica

Bulk - Active Single Phase Standard 50 V 8 A 1.1 V @ 4 A 10 µA @ 50 V -65°C ~ 125°C (TJ) Through Hole 4-Square, BR-8
BR810

BR810

BRIDGE RECT 1PHASE 1KV 8A BR-8

GeneSiC Semiconductor
3,691 -

RFQ

BR810

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 8 A 1.1 V @ 4 A 10 µA @ 1000 V -65°C ~ 125°C (TJ) Through Hole 4-Square, BR-8
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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