Diodos - Retificadores de Ponte

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
BR82

BR82

BRIDGE RECT 1PHASE 200V 8A BR-8

GeneSiC Semiconductor
2,202 -

RFQ

BR82

Ficha técnica

Bulk - Active Single Phase Standard 200 V 8 A 1.1 V @ 4 A 10 µA @ 200 V -65°C ~ 125°C (TJ) Through Hole 4-Square, BR-8
BR84

BR84

BRIDGE RECT 1PHASE 400V 8A BR-8

GeneSiC Semiconductor
3,937 -

RFQ

BR84

Ficha técnica

Bulk - Active Single Phase Standard 400 V 8 A 1.1 V @ 1 A 10 µA @ 400 V -65°C ~ 125°C (TJ) Through Hole 4-Square, BR-8
BR86

BR86

BRIDGE RECT 1PHASE 600V 8A BR-8

GeneSiC Semiconductor
3,081 -

RFQ

BR86

Ficha técnica

Bulk - Active Single Phase Standard 600 V 8 A 1.1 V @ 4 A 10 µA @ 600 V -65°C ~ 125°C (TJ) Through Hole 4-Square, BR-8
G3SBA60-M3/45

G3SBA60-M3/45

BRIDGE RECT 1PHASE 600V 2.3A GBU

Vishay General Semiconductor - Diodes Division
3,593 -

RFQ

G3SBA60-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 2.3 A 1 V @ 2 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G3SBA60-M3/51

G3SBA60-M3/51

BRIDGE RECT 1PHASE 600V 2.3A GBU

Vishay General Semiconductor - Diodes Division
2,721 -

RFQ

G3SBA60-M3/51

Ficha técnica

Tray - Active Single Phase Standard 600 V 2.3 A 1 V @ 2 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
KBJ25005G

KBJ25005G

BRIDGE RECT 1PHASE 50V 25A KBJ

GeneSiC Semiconductor
2,826 -

RFQ

KBJ25005G

Ficha técnica

Bulk - Active Single Phase Standard 50 V 25 A 1.05 V @ 12.5 A 10 µA @ 50 V -55°C ~ 125°C (TJ) Through Hole 4-SIP, KBJ
KBJ2501G

KBJ2501G

BRIDGE RECT 1PHASE 100V 25A KBJ

GeneSiC Semiconductor
3,967 -

RFQ

KBJ2501G

Ficha técnica

Bulk - Active Single Phase Standard 100 V 25 A 1.05 V @ 12.5 A 10 µA @ 100 V -55°C ~ 125°C (TJ) Through Hole 4-SIP, KBJ
KBJ2502G

KBJ2502G

BRIDGE RECT 1PHASE 200V 25A KBJ

GeneSiC Semiconductor
3,358 -

RFQ

KBJ2502G

Ficha técnica

Bulk - Active Single Phase Standard 200 V 25 A 1.05 V @ 12.5 A 10 µA @ 200 V -55°C ~ 125°C (TJ) Through Hole 4-SIP, KBJ
KBJ2504G

KBJ2504G

BRIDGE RECT 1PHASE 400V 25A KBJ

GeneSiC Semiconductor
2,890 -

RFQ

KBJ2504G

Ficha técnica

Bulk - Active Single Phase Standard 400 V 25 A 1.05 V @ 12.5 A 10 µA @ 400 V -55°C ~ 125°C (TJ) Through Hole 4-SIP, KBJ
KBJ2506G

KBJ2506G

BRIDGE RECT 1PHASE 600V 25A KBJ

GeneSiC Semiconductor
2,374 -

RFQ

KBJ2506G

Ficha técnica

Bulk - Active Single Phase Standard 600 V 25 A 1.05 V @ 12.5 A 10 µA @ 600 V -55°C ~ 125°C (TJ) Through Hole 4-SIP, KBJ
KBJ2508G

KBJ2508G

BRIDGE RECT 1PHASE 800V 25A KBJ

GeneSiC Semiconductor
3,201 -

RFQ

KBJ2508G

Ficha técnica

Bulk - Active Single Phase Standard 800 V 25 A 1.05 V @ 12.5 A 10 µA @ 800 V -55°C ~ 125°C (TJ) Through Hole 4-SIP, KBJ
KBJ2510G

KBJ2510G

BRIDGE RECT 1PHASE 1KV 25A KBJ

GeneSiC Semiconductor
2,883 -

RFQ

KBJ2510G

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 25 A 1.05 V @ 12.5 A 10 µA @ 1000 V -55°C ~ 125°C (TJ) Through Hole 4-SIP, KBJ
GBU804H

GBU804H

BRIDGE RECT 1PHASE 400V 8A GBU

Taiwan Semiconductor Corporation
2,813 -

RFQ

GBU804H

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 400 V 8 A 1.1 V @ 8 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU805H

GBU805H

BRIDGE RECT 1PHASE 600V 8A GBU

Taiwan Semiconductor Corporation
3,415 -

RFQ

GBU805H

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 600 V 8 A 1.1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU806H

GBU806H

BRIDGE RECT 1PHASE 800V 8A GBU

Taiwan Semiconductor Corporation
2,637 -

RFQ

GBU806H

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 800 V 8 A 1.1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU807H

GBU807H

BRIDGE RECT 1PHASE 1KV 8A GBU

Taiwan Semiconductor Corporation
2,939 -

RFQ

GBU807H

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 1 kV 8 A 1.1 V @ 8 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
KBP408G-BP

KBP408G-BP

BRIDGE RECT 1PHASE 800V 4A GBP

Micro Commercial Co
2,785 -

RFQ

KBP408G-BP

Ficha técnica

Tube - Active Single Phase Standard 800 V 4 A 1.05 V @ 2 A 10 µA @ 800 V -55°C ~ 150°C Through Hole 4-SIP, GBP
TS25P05GH

TS25P05GH

BRIDGE RECT 1P 600V 25A TS-6P

Taiwan Semiconductor Corporation
3,107 -

RFQ

TS25P05GH

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 600 V 25 A 1.1 V @ 25 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS25P06GH

TS25P06GH

BRIDGE RECT 1P 800V 25A TS-6P

Taiwan Semiconductor Corporation
3,182 -

RFQ

TS25P06GH

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 800 V 25 A 1.1 V @ 25 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS25P07GH

TS25P07GH

BRIDGE RECT 1PHASE 1KV 25A TS-6P

Taiwan Semiconductor Corporation
2,586 -

RFQ

TS25P07GH

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 1 kV 25 A 1.1 V @ 25 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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