Diodos - Retificadores de Ponte

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
G5SBA20-M3/51

G5SBA20-M3/51

BRIDGE RECT 1PHASE 200V 2.8A GBU

Vishay General Semiconductor - Diodes Division
3,147 -

RFQ

G5SBA20-M3/51

Ficha técnica

Tray - Active Single Phase Standard 200 V 2.8 A 1.05 V @ 3 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G5SBA60-M3/51

G5SBA60-M3/51

BRIDGE RECT 1PHASE 600V 2.8A GBU

Vishay General Semiconductor - Diodes Division
3,469 -

RFQ

G5SBA60-M3/51

Ficha técnica

Tray - Active Single Phase Standard 600 V 2.8 A 1.05 V @ 3 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G5SBA80-M3/51

G5SBA80-M3/51

BRIDGE RECT 1PHASE 800V 2.8A GBU

Vishay General Semiconductor - Diodes Division
3,905 -

RFQ

G5SBA80-M3/51

Ficha técnica

Tray - Active Single Phase Standard 800 V 2.8 A 1.05 V @ 3 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU1006A-E3/51

BU1006A-E3/51

BRIDGE RECT 1P 600V 3A BU

Vishay General Semiconductor - Diodes Division
3,116 -

RFQ

BU1006A-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 600 V 3 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1008A-E3/51

BU1008A-E3/51

BRIDGE RECT 1P 800V 3A BU

Vishay General Semiconductor - Diodes Division
3,867 -

RFQ

BU1008A-E3/51

Ficha técnica

Tray - Active Single Phase Standard 800 V 3 A 1.1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
KBJ601G

KBJ601G

BRIDGE RECT 1PHASE 100V 6A KBJ

Diodes Incorporated
3,988 -

RFQ

KBJ601G

Ficha técnica

Tube - Active Single Phase Standard 100 V 6 A 1 V @ 3 A 5 µA @ 100 V -65°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBU4B-E3/45

GBU4B-E3/45

BRIDGE RECT 1PHASE 100V 3A GBU

Vishay General Semiconductor - Diodes Division
2,336 -

RFQ

GBU4B-E3/45

Ficha técnica

Tube - Active Single Phase Standard 100 V 3 A 1 V @ 4 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU4M-E3/45

GBU4M-E3/45

BRIDGE RECT 1PHASE 1KV 3A GBU

Vishay General Semiconductor - Diodes Division
3,717 -

RFQ

GBU4M-E3/45

Ficha técnica

Tube - Active Single Phase Standard 1 kV 3 A 1 V @ 4 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8005-G

GBU8005-G

BRIDGE RECT 1PHASE 50V 8A GBU

Comchip Technology
3,575 -

RFQ

GBU8005-G

Ficha técnica

Bulk - Active Single Phase Standard 50 V 8 A 1 V @ 4 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU802-G

GBU802-G

BRIDGE RECT 1PHASE 200V 8A GBU

Comchip Technology
2,727 -

RFQ

GBU802-G

Ficha técnica

Bulk - Active Single Phase Standard 200 V 8 A 1 V @ 4 A 10 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU804-G

GBU804-G

BRIDGE RECT 1PHASE 400V 8A GBU

Comchip Technology
2,909 -

RFQ

GBU804-G

Ficha técnica

Bulk - Active Single Phase Standard 400 V 8 A 1 V @ 4 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU806-G

GBU806-G

BRIDGE RECT 1PHASE 600V 8A GBU

Comchip Technology
2,363 -

RFQ

GBU806-G

Ficha técnica

Bulk - Active Single Phase Standard 600 V 8 A 1 V @ 4 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU808-G

GBU808-G

BRIDGE RECT 1PHASE 800V 8A GBU

Comchip Technology
3,089 -

RFQ

GBU808-G

Ficha técnica

Bulk - Active Single Phase Standard 800 V 8 A 1 V @ 4 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU810-G

GBU810-G

BRIDGE RECT 1PHASE 1KV 8A GBU

Comchip Technology
2,357 -

RFQ

GBU810-G

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 8 A 1 V @ 4 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
DF10S

DF10S

BRIDGE RECT 1PHASE 1V 1A DFS

Diodes Incorporated
2,516 -

RFQ

DF10S

Ficha técnica

Tube - Active Single Phase Standard 1 kV 1 A 1.1 V @ 1 A 10 µA @ 1000 V -65°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
KBL404G

KBL404G

BRIDGE RECT 1PHASE 400V 4A KBL

Taiwan Semiconductor Corporation
3,510 -

RFQ

KBL404G

Ficha técnica

Tray - Active Single Phase Standard 400 V 4 A 1.1 V @ 4 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
BU1010-E3/51

BU1010-E3/51

BRIDGE RECT 1P 1KV 3.2A BU

Vishay General Semiconductor - Diodes Division
2,001 -

RFQ

BU1010-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 3.2 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
TS8P05G

TS8P05G

BRIDGE RECT 1PHASE 600V 8A TS-6P

Taiwan Semiconductor Corporation
3,475 -

RFQ

TS8P05G

Ficha técnica

Tube - Active Single Phase Standard 600 V 8 A 1.1 V @ 8 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS8P06G

TS8P06G

BRIDGE RECT 1PHASE 800V 8A TS-6P

Taiwan Semiconductor Corporation
3,373 -

RFQ

TS8P06G

Ficha técnica

Tube - Active Single Phase Standard 800 V 8 A 1.1 V @ 8 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
GBU2508-HF

GBU2508-HF

RECTIFIER BRIDGE GPP 800V 25A GB

Comchip Technology
2,442 -

RFQ

GBU2508-HF

Ficha técnica

Tube - Active Single Phase Standard 800 V 25 A 1 V @ 12.5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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