Diodos - Retificadores de Ponte

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
TS8P05GH

TS8P05GH

BRIDGE RECT 1PHASE 600V 8A TS-6P

Taiwan Semiconductor Corporation
2,143 -

RFQ

TS8P05GH

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 600 V 8 A 1.1 V @ 8 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
TS8P06GH

TS8P06GH

BRIDGE RECT 1PHASE 800V 8A TS-6P

Taiwan Semiconductor Corporation
2,886 -

RFQ

TS8P06GH

Ficha técnica

Tube Automotive, AEC-Q101 Active Single Phase Standard 800 V 8 A 1.1 V @ 8 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, TS-6P
PB610-BP

PB610-BP

BRIDGE RECT 1PHASE 1KV 6A PB-6

Micro Commercial Co
3,631 -

RFQ

PB610-BP

Ficha técnica

Bulk - Active Single Phase Standard 1 kV 6 A 1.1 V @ 3 A 10 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-Square, PB-6
KBJ610G-BP

KBJ610G-BP

BRIDGE RECT 1PHASE 1KV 6A KBJ

Micro Commercial Co
3,683 -

RFQ

KBJ610G-BP

Ficha técnica

Tube - Active Single Phase Standard 1 kV 6 A 1 V @ 3 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBJ
GBU6G-E3/51

GBU6G-E3/51

BRIDGE RECT 1PHASE 400V 3.8A GBU

Vishay General Semiconductor - Diodes Division
3,999 -

RFQ

GBU6G-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 400 V 3.8 A 1 V @ 6 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8K-M3/51

GBU8K-M3/51

BRIDGE RECT 1PHASE 800V 8A GBU

Vishay General Semiconductor - Diodes Division
3,336 -

RFQ

GBU8K-M3/51

Ficha técnica

Tray - Active Single Phase Standard 800 V 8 A 1 V @ 8 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8M-M3/51

GBU8M-M3/51

BRIDGE RECT 1PHASE 1KV 8A GBU

Vishay General Semiconductor - Diodes Division
2,685 -

RFQ

GBU8M-M3/51

Ficha técnica

Tray - Active Single Phase Standard 1 kV 8 A 1 V @ 8 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU2508-G

GBU2508-G

BRIDGE RECT 1PHASE 800V 4.2A GBU

Comchip Technology
3,418 -

RFQ

GBU2508-G

Ficha técnica

Bulk - Active Single Phase Standard 800 V 4.2 A 1 V @ 12.5 A 10 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G5SBA20-M3/45

G5SBA20-M3/45

BRIDGE RECT 1PHASE 200V 2.8A GBU

Vishay General Semiconductor - Diodes Division
3,033 -

RFQ

G5SBA20-M3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 2.8 A 1.05 V @ 3 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G5SBA60-M3/45

G5SBA60-M3/45

BRIDGE RECT 1PHASE 600V 2.8A GBU

Vishay General Semiconductor - Diodes Division
2,911 -

RFQ

G5SBA60-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 2.8 A 1.05 V @ 3 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
G5SBA80-M3/45

G5SBA80-M3/45

BRIDGE RECT 1PHASE 800V 2.8A GBU

Vishay General Semiconductor - Diodes Division
3,455 -

RFQ

G5SBA80-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 2.8 A 1.05 V @ 3 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU1006A-E3/45

BU1006A-E3/45

BRIDGE RECT 1P 600V 3A BU

Vishay General Semiconductor - Diodes Division
2,542 -

RFQ

BU1006A-E3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 3 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1008A-E3/45

BU1008A-E3/45

BRIDGE RECT 1P 800V 3A BU

Vishay General Semiconductor - Diodes Division
2,348 -

RFQ

BU1008A-E3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 3 A 1.1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1010A-E3/45

BU1010A-E3/45

BRIDGE RECT 1P 1KV 3A BU

Vishay General Semiconductor - Diodes Division
2,111 -

RFQ

BU1010A-E3/45

Ficha técnica

Tube - Active Single Phase Standard 1 kV 3 A 1.1 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1206-E3/51

BU1206-E3/51

BRIDGE RECT 1P 600V 3.4A BU

Vishay General Semiconductor - Diodes Division
3,514 -

RFQ

BU1206-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 600 V 3.4 A 1.05 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1208-E3/51

BU1208-E3/51

BRIDGE RECT 1P 800V 3.4A BU

Vishay General Semiconductor - Diodes Division
3,235 -

RFQ

BU1208-E3/51

Ficha técnica

Bulk - Active Single Phase Standard 800 V 3.4 A 1.05 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
DF1508S

DF1508S

BRIDGE RECT 1P 800V 1.5A DF-S

Diodes Incorporated
3,634 -

RFQ

DF1508S

Ficha técnica

Tube - Active Single Phase Standard 800 V 1.5 A 1.1 V @ 1.5 A 10 µA @ 800 V -65°C ~ 150°C (TJ) Surface Mount 4-SMD, Gull Wing
BU1006A-M3/51

BU1006A-M3/51

BRIDGE RECT 1P 600V 10A BU

Vishay General Semiconductor - Diodes Division
2,463 -

RFQ

BU1006A-M3/51

Ficha técnica

Tray - Active Single Phase Standard 600 V 10 A 1.1 V @ 5 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1008A-M3/51

BU1008A-M3/51

BRIDGE RECT 1P 800V 10A BU

Vishay General Semiconductor - Diodes Division
3,416 -

RFQ

BU1008A-M3/51

Ficha técnica

Tray - Active Single Phase Standard 800 V 10 A 1.1 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1010A-M3/51

BU1010A-M3/51

BRIDGE RECT 1P 1KV 10A BU

Vishay General Semiconductor - Diodes Division
3,688 -

RFQ

BU1010A-M3/51

Ficha técnica

Tray - Active Single Phase Standard 1 kV 10 A 1.1 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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