Diodos - Retificadores de Ponte

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus DiodeType Technology Voltage-PeakReverse(Max) Current-AverageRectified(Io) Voltage-Forward(Vf)(Max)@If Current-ReverseLeakage@Vr OperatingTemperature MountingType VRRM(V) I(AV)(A) IFSM(A) VF@IF(V) VF@IF(A) IR(μA) Trr(ns)
KBL605G

KBL605G

BRIDGE RECT 1PHASE 600V 6A KBL

Taiwan Semiconductor Corporation
3,371 -

RFQ

KBL605G

Ficha técnica

Tray - Active Single Phase Standard 600 V 6 A 1.1 V @ 6 A 10 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, KBL
GSIB640-E3/45

GSIB640-E3/45

BRIDGE RECT 1P 400V 2.8A GSIB-5S

Vishay General Semiconductor - Diodes Division
3,039 -

RFQ

GSIB640-E3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 2.8 A 950 mV @ 3 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GSIB-5S
BU1006-M3/51

BU1006-M3/51

BRIDGE RECT 1P 600V 10A BU

Vishay General Semiconductor - Diodes Division
3,084 -

RFQ

BU1006-M3/51

Ficha técnica

Tray - Active Single Phase Standard 600 V 10 A 1.05 V @ 5 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1008-M3/51

BU1008-M3/51

BRIDGE RECT 1P 800V 10A BU

Vishay General Semiconductor - Diodes Division
2,305 -

RFQ

BU1008-M3/51

Ficha técnica

Tray - Active Single Phase Standard 800 V 10 A 1.05 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
BU1010-M3/51

BU1010-M3/51

BRIDGE RECT 1P 1KV 10A BU

Vishay General Semiconductor - Diodes Division
2,270 -

RFQ

BU1010-M3/51

Ficha técnica

Tray - Active Single Phase Standard 1 kV 10 A 1.05 V @ 5 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GBU6A-M3/45

GBU6A-M3/45

BRIDGE RECT 1PHASE 50V 3.8A GBU

Vishay General Semiconductor - Diodes Division
2,436 -

RFQ

GBU6A-M3/45

Ficha técnica

Tube - Active Single Phase Standard 50 V 3.8 A 1 V @ 6 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8A-M3/45

GBU8A-M3/45

BRIDGE RECT 1PHASE 50V 3.9A GBU

Vishay General Semiconductor - Diodes Division
3,372 -

RFQ

GBU8A-M3/45

Ficha técnica

Tube - Active Single Phase Standard 50 V 3.9 A 1 V @ 8 A 5 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6B-M3/45

GBU6B-M3/45

BRIDGE RECT 1PHASE 100V 6A GBU

Vishay General Semiconductor - Diodes Division
3,550 -

RFQ

GBU6B-M3/45

Ficha técnica

Tube - Active Single Phase Standard 100 V 6 A 1 V @ 6 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6D-M3/45

GBU6D-M3/45

BRIDGE RECT 1PHASE 200V 6A GBU

Vishay General Semiconductor - Diodes Division
3,633 -

RFQ

GBU6D-M3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 6 A 1 V @ 3 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6G-M3/45

GBU6G-M3/45

BRIDGE RECT 1PHASE 400V 6A GBU

Vishay General Semiconductor - Diodes Division
3,516 -

RFQ

GBU6G-M3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 6 A 1 V @ 6 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6J-M3/45

GBU6J-M3/45

BRIDGE RECT 1PHASE 600V 6A GBU

Vishay General Semiconductor - Diodes Division
2,682 -

RFQ

GBU6J-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 6 A 1 V @ 6 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6K-M3/45

GBU6K-M3/45

BRIDGE RECT 1PHASE 800V 6A GBU

Vishay General Semiconductor - Diodes Division
2,863 -

RFQ

GBU6K-M3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 6 A 1 V @ 6 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU6M-M3/45

GBU6M-M3/45

BRIDGE RECT 1PHASE 1KV 6A GBU

Vishay General Semiconductor - Diodes Division
2,267 -

RFQ

GBU6M-M3/45

Ficha técnica

Tube - Active Single Phase Standard 1 kV 6 A 1 V @ 6 A 5 µA @ 1000 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8B-M3/45

GBU8B-M3/45

BRIDGE RECT 1PHASE 100V 8A GBU

Vishay General Semiconductor - Diodes Division
2,746 -

RFQ

GBU8B-M3/45

Ficha técnica

Tube - Active Single Phase Standard 100 V 8 A 1 V @ 8 A 5 µA @ 100 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8D-M3/45

GBU8D-M3/45

BRIDGE RECT 1PHASE 200V 8A GBU

Vishay General Semiconductor - Diodes Division
2,930 -

RFQ

GBU8D-M3/45

Ficha técnica

Tube - Active Single Phase Standard 200 V 8 A 1 V @ 8 A 5 µA @ 200 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8G-M3/45

GBU8G-M3/45

BRIDGE RECT 1PHASE 400V 8A GBU

Vishay General Semiconductor - Diodes Division
2,410 -

RFQ

GBU8G-M3/45

Ficha técnica

Tube - Active Single Phase Standard 400 V 8 A 1 V @ 8 A 5 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU8J-M3/45

GBU8J-M3/45

BRIDGE RECT 1PHASE 600V 8A GBU

Vishay General Semiconductor - Diodes Division
3,260 -

RFQ

GBU8J-M3/45

Ficha técnica

Tube - Active Single Phase Standard 600 V 8 A 1 V @ 8 A 5 µA @ 600 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
BU1008-E3/45

BU1008-E3/45

BRIDGE RECT 1P 800V 3.2A BU

Vishay General Semiconductor - Diodes Division
3,071 -

RFQ

BU1008-E3/45

Ficha técnica

Tube - Active Single Phase Standard 800 V 3.2 A 1.05 V @ 5 A 5 µA @ 800 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, BU
GBU25005-G

GBU25005-G

BRIDGE RECT 1PHASE 50V 25A GBU

Comchip Technology
3,574 -

RFQ

GBU25005-G

Ficha técnica

Tube - Active Single Phase Standard 50 V 25 A 1 V @ 12.5 A 10 µA @ 50 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
GBU2504-G

GBU2504-G

BRIDGE RECT 1PHASE 400V 25A GBU

Comchip Technology
2,656 -

RFQ

GBU2504-G

Ficha técnica

Tube - Active Single Phase Standard 400 V 25 A 1 V @ 12.5 A 10 µA @ 400 V -55°C ~ 150°C (TJ) Through Hole 4-SIP, GBU
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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