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Diodos - Retificadores - Matrizes

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	ProductStatus	DiodeConfiguration	DiodeType	Voltage-DCReverse(Vr)(Max)	Current-AverageRectified(Io)(perDiode)	Voltage-Forward(Vf)(Max)@If	Speed	ReverseRecoveryTime(trr)	Current-ReverseLeakage@Vr	OperatingTemperature-Junction	MountingType
GD2X100MPS06N 650V 200A SOT-227 SIC SCHOTTKY M GeneSiC Semiconductor	374	-	RFQ	Ficha técnica	Tube	SiC Schottky MPS™	Active	2 Independent	Silicon Carbide Schottky	650 V	108A (DC)	1.8 V @ 100 A	No Recovery Time > 500mA (Io)	0 ns	5 µA @ 650 V	-55°C ~ 175°C	Chassis Mount
GB2X50MPS12-227 SIC DIODE 1200V 100A SOT-227 GeneSiC Semiconductor	654	-	RFQ	Ficha técnica	Tube	SiC Schottky MPS™	Active	2 Independent	Silicon Carbide Schottky	1200 V	93A (DC)	1.8 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	40 µA @ 1200 V	-55°C ~ 175°C	Chassis Mount
GD2X100MPS12N 1200V 200A SOT-227 SIC SCHOTTKY GeneSiC Semiconductor	3,053	-	RFQ	Ficha técnica	Tube	MSP	Active	2 Independent	Silicon Carbide Schottky	1200 V	136A (DC)	1.8 V @ 100 A	No Recovery Time > 500mA (Io)	0 ns	25 µA @ 1200 V	-55°C ~ 175°C	Chassis Mount
GB2X50MPS17-227 DIODE MOD SCHOTTKY 1700V SOT227 GeneSiC Semiconductor	2,232	-	RFQ	Ficha técnica	Tube	SiC Schottky MPS™	Active	2 Independent	Silicon Carbide Schottky	1700 V	136A (DC)	1.8 V @ 50 A	No Recovery Time > 500mA (Io)	0 ns	50 µA @ 1700 V	-55°C ~ 175°C	Chassis Mount
GD2X75MPS17N 1700V 150A SOT-227 SIC SCHOTTKY GeneSiC Semiconductor	109	-	RFQ	Ficha técnica	Tube	SiC Schottky MPS™	Active	2 Independent	Silicon Carbide Schottky	1700 V	115A (DC)	-	No Recovery Time > 500mA (Io)	-	-	-55°C ~ 175°C	Chassis Mount
GB2X100MPS12-227 SIC DIODE 1200V 200A SOT-227 GeneSiC Semiconductor	218	-	RFQ	Ficha técnica	Tube	SiC Schottky MPS™	Active	2 Independent	Silicon Carbide Schottky	1200 V	185A (DC)	1.8 V @ 100 A	No Recovery Time > 500mA (Io)	0 ns	80 µA @ 1200 V	-55°C ~ 175°C	Chassis Mount
GD2X30MPS12N 1200V 60A SOT-227 SIC SCHOTTKY M GeneSiC Semiconductor	438	-	RFQ	Ficha técnica	Tube	SiC Schottky MPS™	Active	2 Independent	Silicon Carbide Schottky	1200 V	52A (DC)	-	No Recovery Time > 500mA (Io)	-	-	-55°C ~ 175°C	Chassis Mount
MBRT400100 DIODE MODULE 100V 200A 3TOWER GeneSiC Semiconductor	3,158	-	RFQ	Ficha técnica	Bulk	-	Active	1 Pair Common Cathode	Schottky	100 V	200A	880 mV @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-55°C ~ 150°C	Chassis Mount
MBRT40045 DIODE MODULE 45V 200A 3TOWER GeneSiC Semiconductor	2,374	-	RFQ	Ficha técnica	Bulk	-	Active	1 Pair Common Cathode	Schottky	45 V	200A	750 mV @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-55°C ~ 150°C	Chassis Mount
MURT40040R DIODE MODULE 400V 200A 3TOWER GeneSiC Semiconductor	3,921	-	RFQ	Ficha técnica	Bulk	-	Active	1 Pair Common Anode	Standard, Reverse Polarity	400 V	200A	1.35 V @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	180 ns	25 µA @ 50 V	-55°C ~ 150°C	Chassis Mount
GD2X30MPS06D 650V 60A TO-247-3 SIC SCHOTTKY M GeneSiC Semiconductor	3,401	-	RFQ		Tube	SiC Schottky MPS™	Active	1 Pair Common Cathode	Silicon Carbide Schottky	600 V	30A (DC)	-	No Recovery Time > 500mA (Io)	0 ns	-	175°C	Through Hole
GD2X20MPS12D 1200V 40A TO-247-3 SIC SCHOTTK GeneSiC Semiconductor	586	-	RFQ	Ficha técnica	Tube	SiC Schottky MPS™	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	39A (DC)	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 1200 V	-55°C ~ 175°C	Through Hole
GD2X30MPS12D DIODE SCHOTTKY 1200V 2X30A TO-24 GeneSiC Semiconductor	521	-	RFQ	Ficha técnica	Tube	SiC Schottky MPS™	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	55A (DC)	1.8 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	20 µA @ 1200 V	-55°C ~ 175°C	Through Hole
GD2X30MPS06N 650V 60A SOT-227 SIC SCHOTTKY MP GeneSiC Semiconductor	292	-	RFQ	Ficha técnica	Tube	SiC Schottky MPS™	Active	2 Independent	Silicon Carbide Schottky	650 V	42A (DC)	-	No Recovery Time > 500mA (Io)	-	-	-55°C ~ 175°C	Chassis Mount
MBRT20060 DIODE MODULE 60V 100A 3TOWER GeneSiC Semiconductor	2,675	-	RFQ	Ficha técnica	Bulk	-	Active	1 Pair Common Cathode	Schottky	60 V	100A	800 mV @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-55°C ~ 150°C	Chassis Mount
MBR2X030A045 DIODE SCHOTTKY 45V 60A SOT227 GeneSiC Semiconductor	2,634	-	RFQ	Ficha técnica	Bulk	-	Active	2 Independent	Schottky	45 V	60A	700 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	-40°C ~ 150°C	Chassis Mount
MUR2X100A04 DIODE GEN PURP 400V 100A SOT227 GeneSiC Semiconductor	3,119	-	RFQ	Ficha técnica	Bulk	-	Active	2 Independent	Standard	400 V	100A	1.3 V @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	90 ns	25 µA @ 400 V	-55°C ~ 175°C	Chassis Mount
FST16035 DIODE MODULE 35V 160A TO249AB GeneSiC Semiconductor	3,176	-	RFQ	Ficha técnica	Bulk	-	Active	1 Pair Common Cathode	Schottky	35 V	160A	750 mV @ 160 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-55°C ~ 150°C	Chassis Mount
MBRT20040 DIODE MODULE 40V 100A 3TOWER GeneSiC Semiconductor	3,358	-	RFQ	Ficha técnica	Bulk	-	Active	1 Pair Common Cathode	Schottky	40 V	100A	750 mV @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-55°C ~ 150°C	Chassis Mount
MBRT200100 DIODE MODULE 100V 100A 3TOWER GeneSiC Semiconductor	3,220	-	RFQ	Ficha técnica	Bulk	-	Active	1 Pair Common Cathode	Schottky	100 V	100A	880 mV @ 100 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 20 V	-55°C ~ 150°C	Chassis Mount