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Diodos - Retificadores - Matrizes

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	ProductStatus	DiodeConfiguration	DiodeType	Voltage-DCReverse(Vr)(Max)	Current-AverageRectified(Io)(perDiode)	Voltage-Forward(Vf)(Max)@If	Speed	ReverseRecoveryTime(trr)	Current-ReverseLeakage@Vr	OperatingTemperature-Junction	MountingType
MBR400100CTR DIODE MODULE 100V 200A 2TOWER GeneSiC Semiconductor	2,656	-	RFQ	Ficha técnica	Bulk	-	Active	1 Pair Common Anode	Schottky, Reverse Polarity	100 V	200A	840 mV @ 200 A	Fast Recovery =< 500ns, > 200mA (Io)	-	5 mA @ 20 V	-55°C ~ 150°C	Chassis Mount
MBR2X120A045 DIODE SCHOTTKY 45V 120A SOT227 GeneSiC Semiconductor	3,660	-	RFQ	Ficha técnica	Bulk	-	Active	2 Independent	Schottky	45 V	120A	700 mV @ 120 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 45 V	-40°C ~ 150°C	Chassis Mount
GE2X10MPS06D 650V 20A TO-247-3 SIC SCHOTTKY M GeneSiC Semiconductor	2,427	-	RFQ	Ficha técnica	Tube	SiC Schottky MPS™	Active	1 Pair Common Cathode	Silicon Carbide Schottky	650 V	23A (DC)	-	No Recovery Time > 500mA (Io)	-	-	-55°C ~ 175°C	Through Hole
GD2X60MPS06N 650V 120A SOT-227 SIC SCHOTTKY GeneSiC Semiconductor	300	-	RFQ	Ficha técnica	Tube	SiC Schottky MPS™	Active	2 Independent	Silicon Carbide Schottky	650 V	70A (DC)	1.8 V @ 60 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 650 V	-55°C ~ 175°C	Chassis Mount
GD2X25MPS17N 1700V 50A SOT-227 SIC SCHOTTKY M GeneSiC Semiconductor	2,438	-	RFQ	Ficha técnica	Tube	SiC Schottky MPS™	Active	2 Independent	Silicon Carbide Schottky	1700 V	50A (DC)	1.8 V @ 25 A	No Recovery Time > 500mA (Io)	0 ns	20 µA @ 1700 V	-55°C ~ 175°C	Chassis Mount
GD2X150MPS06N 650V 300A SOT-227 SIC SCHOTTKY M GeneSiC Semiconductor	3,321	-	RFQ	Ficha técnica	Tube	SiC Schottky MPS™	Active	2 Independent	Silicon Carbide Schottky	650 V	150A (DC)	1.8 V @ 150 A	No Recovery Time > 500mA (Io)	0 ns	10 µA @ 650 V	-55°C ~ 175°C	Chassis Mount
GC2X5MPS12-247 SIC DIODE 1200V 10A TO-247-3 GeneSiC Semiconductor	3,493	-	RFQ	Ficha técnica	Tube	SiC Schottky MPS™	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	27A (DC)	1.8 V @ 5 A	No Recovery Time > 500mA (Io)	0 ns	4 µA @ 1200 V	-55°C ~ 175°C	Through Hole
GC2X8MPS12-247 SIC DIODE 1200V 15A TO-247-3 GeneSiC Semiconductor	2,232	-	RFQ	Ficha técnica	Tube	SiC Schottky MPS™	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	40A (DC)	1.8 V @ 8 A	No Recovery Time > 500mA (Io)	0 ns	7 µA @ 1200 V	-55°C ~ 175°C	Through Hole
GC2X15MPS12-247 SIC DIODE 1200V 30A TO-247-3 GeneSiC Semiconductor	2,036	-	RFQ	Ficha técnica	Tube	SiC Schottky MPS™	Active	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	75A (DC)	1.8 V @ 15 A	No Recovery Time > 500mA (Io)	0 ns	14 µA @ 1200 V	-55°C ~ 175°C	Through Hole
GC2X20MPS12-247 SIC DIODE 1200V 40A TO-247-3 GeneSiC Semiconductor	2,738	-	RFQ	Ficha técnica	Tube	SiC Schottky MPS™	Not For New Designs	1 Pair Common Cathode	Silicon Carbide Schottky	1200 V	90A (DC)	1.8 V @ 20 A	No Recovery Time > 500mA (Io)	0 ns	18 µA @ 1200 V	-55°C ~ 175°C	Through Hole
MUR2X030A02 DIODE GEN PURP 200V 30A SOT227 GeneSiC Semiconductor	2,973	-	RFQ	Ficha técnica	Bulk	-	Active	2 Independent	Standard	200 V	30A	1 V @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	60 ns	25 µA @ 200 V	-55°C ~ 175°C	Chassis Mount
MUR2X030A04 DIODE GEN PURP 400V 30A SOT227 GeneSiC Semiconductor	2,724	-	RFQ	Ficha técnica	Bulk	-	Active	2 Independent	Standard	400 V	30A	1.3 V @ 30 A	Standard Recovery >500ns, > 200mA (Io)	-	25 µA @ 400 V	-55°C ~ 175°C	Chassis Mount
MBR2X030A060 DIODE SCHOTTKY 60V 30A SOT227 GeneSiC Semiconductor	2,233	-	RFQ	Ficha técnica	Bulk	-	Active	2 Independent	Schottky	60 V	30A	750 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 60 V	-40°C ~ 150°C	Chassis Mount
MBR2X030A080 DIODE SCHOTTKY 80V 30A SOT227 GeneSiC Semiconductor	3,711	-	RFQ	Ficha técnica	Bulk	-	Active	2 Independent	Schottky	80 V	30A	840 mV @ 30 A	Fast Recovery =< 500ns, > 200mA (Io)	-	1 mA @ 80 V	-40°C ~ 150°C	Chassis Mount
MSRT150100A DIODE MODULE 1KV 150A 3TOWER GeneSiC Semiconductor	3,765	-	RFQ		Bulk	-	Active	1 Pair Common Cathode	Standard	1000 V	150A	1.2 V @ 150 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-55°C ~ 150°C	Chassis Mount
MSRT150120A DIODE MODULE 1.2KV 150A 3TOWER GeneSiC Semiconductor	2,682	-	RFQ		Bulk	-	Active	1 Pair Common Cathode	Standard	1200 V	150A	1.2 V @ 150 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-55°C ~ 150°C	Chassis Mount
MSRT150140A DIODE MODULE 1.4KV 150A 3TOWER GeneSiC Semiconductor	2,114	-	RFQ		Bulk	-	Active	1 Pair Common Cathode	Standard	1400 V	150A	1.2 V @ 150 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-55°C ~ 150°C	Chassis Mount
MSRT150160A DIODE MODULE 1.6KV 150A 3TOWER GeneSiC Semiconductor	2,523	-	RFQ		Bulk	-	Active	1 Pair Common Cathode	Standard	1600 V	150A	1.2 V @ 150 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-55°C ~ 150°C	Chassis Mount
MSRT15060A DIODE MODULE 600V 150A 3TOWER GeneSiC Semiconductor	2,273	-	RFQ		Bulk	-	Active	1 Pair Common Cathode	Standard	600 V	150A	1.2 V @ 150 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-55°C ~ 150°C	Chassis Mount
MSRT15080A DIODE MODULE 800V 150A 3TOWER GeneSiC Semiconductor	3,797	-	RFQ		Bulk	-	Active	1 Pair Common Cathode	Standard	800 V	150A	1.2 V @ 150 A	Standard Recovery >500ns, > 200mA (Io)	-	10 µA @ 600 V	-55°C ~ 150°C	Chassis Mount