Diodos - Retificadores - Matrizes

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus DiodeConfiguration DiodeType Voltage-DCReverse(Vr)(Max) Current-AverageRectified(Io)(perDiode) Voltage-Forward(Vf)(Max)@If Speed ReverseRecoveryTime(trr) Current-ReverseLeakage@Vr OperatingTemperature-Junction MountingType
MBR2X050A200

MBR2X050A200

DIODE SCHOTTKY 200V 100A SOT227

GeneSiC Semiconductor
2,568 -

RFQ

MBR2X050A200

Ficha técnica

Bulk - Active 2 Independent Schottky 200 V 100A 920 mV @ 50 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -40°C ~ 150°C Chassis Mount
MBR2X050A045

MBR2X050A045

DIODE SCHOTTKY 45V 50A SOT227

GeneSiC Semiconductor
2,178 -

RFQ

MBR2X050A045

Ficha técnica

Bulk - Active 2 Independent Schottky 45 V 50A 700 mV @ 50 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 45 V -40°C ~ 150°C Chassis Mount
MBR2X050A060

MBR2X050A060

DIODE SCHOTTKY 60V 50A SOT227

GeneSiC Semiconductor
3,187 -

RFQ

MBR2X050A060

Ficha técnica

Bulk - Active 2 Independent Schottky 60 V 50A 750 mV @ 50 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 60 V -40°C ~ 150°C Chassis Mount
MBR2X050A080

MBR2X050A080

DIODE SCHOTTKY 80V 50A SOT227

GeneSiC Semiconductor
3,400 -

RFQ

MBR2X050A080

Ficha técnica

Bulk - Active 2 Independent Schottky 80 V 50A 840 mV @ 50 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 80 V -40°C ~ 150°C Chassis Mount
MBR2X050A100

MBR2X050A100

DIODE SCHOTTKY 100V 50A SOT227

GeneSiC Semiconductor
3,440 -

RFQ

MBR2X050A100

Ficha técnica

Bulk - Active 2 Independent Schottky 100 V 50A 840 mV @ 50 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 100 V -40°C ~ 150°C Chassis Mount
MBR2X050A120

MBR2X050A120

DIODE SCHOTTKY 120V 50A SOT227

GeneSiC Semiconductor
2,998 -

RFQ

MBR2X050A120

Ficha técnica

Bulk - Active 2 Independent Schottky 120 V 50A 880 mV @ 50 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 120 V -40°C ~ 150°C Chassis Mount
MBR2X050A150

MBR2X050A150

DIODE SCHOTTKY 150V 50A SOT227

GeneSiC Semiconductor
2,671 -

RFQ

MBR2X050A150

Ficha técnica

Bulk - Active 2 Independent Schottky 150 V 50A 880 mV @ 50 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -40°C ~ 150°C Chassis Mount
MBR2X050A180

MBR2X050A180

DIODE SCHOTTKY 180V 50A SOT227

GeneSiC Semiconductor
2,361 -

RFQ

MBR2X050A180

Ficha técnica

Bulk - Active 2 Independent Schottky 180 V 50A 920 mV @ 50 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 180 V -40°C ~ 150°C Chassis Mount
MBR2X060A060

MBR2X060A060

DIODE SCHOTTKY 60V 60A SOT227

GeneSiC Semiconductor
2,412 -

RFQ

MBR2X060A060

Ficha técnica

Bulk - Active 2 Independent Schottky 60 V 60A 750 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 60 V -40°C ~ 150°C Chassis Mount
MBR2X060A080

MBR2X060A080

DIODE SCHOTTKY 80V 60A SOT227

GeneSiC Semiconductor
3,571 -

RFQ

MBR2X060A080

Ficha técnica

Bulk - Active 2 Independent Schottky 80 V 60A 840 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 80 V -40°C ~ 150°C Chassis Mount
MBR2X060A100

MBR2X060A100

DIODE SCHOTTKY 100V 60A SOT227

GeneSiC Semiconductor
2,620 -

RFQ

MBR2X060A100

Ficha técnica

Bulk - Active 2 Independent Schottky 100 V 60A 840 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 100 V -40°C ~ 150°C Chassis Mount
MBR2X060A120

MBR2X060A120

DIODE SCHOTTKY 120V 60A SOT227

GeneSiC Semiconductor
2,388 -

RFQ

MBR2X060A120

Ficha técnica

Bulk - Active 2 Independent Schottky 120 V 60A 880 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 120 V -40°C ~ 150°C Chassis Mount
MBR2X060A150

MBR2X060A150

DIODE SCHOTTKY 150V 60A SOT227

GeneSiC Semiconductor
2,077 -

RFQ

MBR2X060A150

Ficha técnica

Bulk - Active 2 Independent Schottky 150 V 60A 880 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -40°C ~ 150°C Chassis Mount
MBR2X060A180

MBR2X060A180

DIODE SCHOTTKY 180V 60A SOT227

GeneSiC Semiconductor
3,221 -

RFQ

MBR2X060A180

Ficha técnica

Bulk - Active 2 Independent Schottky 180 V 60A 920 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 180 V -40°C ~ 150°C Chassis Mount
MBR2X060A200

MBR2X060A200

DIODE SCHOTTKY 200V 60A SOT227

GeneSiC Semiconductor
3,875 -

RFQ

MBR2X060A200

Ficha técnica

Bulk - Active 2 Independent Schottky 200 V 60A 920 mV @ 60 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -40°C ~ 150°C Chassis Mount
MUR2X060A10

MUR2X060A10

DIODE GEN PURP 1KV 60A SOT227

GeneSiC Semiconductor
3,713 -

RFQ

MUR2X060A10

Ficha técnica

Bulk - Active 2 Independent Standard 1000 V 60A 2.35 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1000 V -55°C ~ 175°C Chassis Mount
MUR2X060A12

MUR2X060A12

DIODE GEN PURP 1.2KV 60A SOT227

GeneSiC Semiconductor
2,939 -

RFQ

MUR2X060A12

Ficha técnica

Bulk - Active 2 Independent Standard 1200 V 60A 2.35 V @ 60 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1200 V -55°C ~ 175°C Chassis Mount
MUR2X100A06

MUR2X100A06

DIODE GEN PURP 600V 100A SOT227

GeneSiC Semiconductor
3,555 -

RFQ

MUR2X100A06

Ficha técnica

Bulk - Active 2 Independent Standard 600 V 100A 1.5 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 600 V -55°C ~ 175°C Chassis Mount
MBR2X080A060

MBR2X080A060

DIODE SCHOTTKY 60V 80A SOT227

GeneSiC Semiconductor
3,654 -

RFQ

MBR2X080A060

Ficha técnica

Bulk - Active 2 Independent Schottky 60 V 80A 750 mV @ 80 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 60 V -40°C ~ 150°C Chassis Mount
MBR2X080A080

MBR2X080A080

DIODE SCHOTTKY 80V 80A SOT227

GeneSiC Semiconductor
2,429 -

RFQ

MBR2X080A080

Ficha técnica

Bulk - Active 2 Independent Schottky 80 V 80A 840 mV @ 80 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 80 V -40°C ~ 150°C Chassis Mount
Total 920 Record«Prev1... 2223242526272829...46Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário