Diodos - Retificadores - Matrizes

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus DiodeConfiguration DiodeType Voltage-DCReverse(Vr)(Max) Current-AverageRectified(Io)(perDiode) Voltage-Forward(Vf)(Max)@If Speed ReverseRecoveryTime(trr) Current-ReverseLeakage@Vr OperatingTemperature-Junction MountingType
MSRT20060A

MSRT20060A

DIODE MODULE 600V 200A 3TOWER

GeneSiC Semiconductor
3,508 -

RFQ

MSRT20060A

Ficha técnica

Bulk - Active 1 Pair Common Cathode Standard 600 V 200A (DC) 1.2 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V -40°C ~ 175°C Chassis Mount
MBR2X120A060

MBR2X120A060

DIODE SCHOTTKY 60V 120A SOT227

GeneSiC Semiconductor
3,216 -

RFQ

MBR2X120A060

Ficha técnica

Bulk - Active 2 Independent Schottky 60 V 120A 750 mV @ 120 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 60 V -40°C ~ 150°C Chassis Mount
MBR2X120A080

MBR2X120A080

DIODE SCHOTTKY 80V 120A SOT227

GeneSiC Semiconductor
3,035 -

RFQ

MBR2X120A080

Ficha técnica

Bulk - Active 2 Independent Schottky 80 V 120A 840 mV @ 120 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 80 V -40°C ~ 150°C Chassis Mount
MBR2X120A100

MBR2X120A100

DIODE SCHOTTKY 100V 120A SOT227

GeneSiC Semiconductor
3,529 -

RFQ

MBR2X120A100

Ficha técnica

Bulk - Active 2 Independent Schottky 100 V 120A 840 mV @ 120 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 100 V -40°C ~ 150°C Chassis Mount
MBR2X120A120

MBR2X120A120

DIODE SCHOTTKY 120V 120A SOT227

GeneSiC Semiconductor
2,541 -

RFQ

MBR2X120A120

Ficha técnica

Bulk - Active 2 Independent Schottky 120 V 120A 880 mV @ 120 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 120 V -40°C ~ 150°C Chassis Mount
MBR2X120A150

MBR2X120A150

DIODE SCHOTTKY 150V 120A SOT227

GeneSiC Semiconductor
2,115 -

RFQ

MBR2X120A150

Ficha técnica

Bulk - Active 2 Independent Schottky 150 V 120A 880 mV @ 120 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -40°C ~ 150°C Chassis Mount
MBR2X120A180

MBR2X120A180

DIODE SCHOTTKY 180V 120A SOT227

GeneSiC Semiconductor
2,955 -

RFQ

MBR2X120A180

Ficha técnica

Bulk - Active 2 Independent Schottky 180 V 120A 920 mV @ 120 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 180 V -40°C ~ 150°C Chassis Mount
MBR2X120A200

MBR2X120A200

DIODE SCHOTTKY 200V 120A SOT227

GeneSiC Semiconductor
2,429 -

RFQ

MBR2X120A200

Ficha técnica

Bulk - Active 2 Independent Schottky 200 V 120A 920 mV @ 120 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -40°C ~ 150°C Chassis Mount
MUR2X120A10

MUR2X120A10

DIODE GEN PURP 1KV 120A SOT227

GeneSiC Semiconductor
3,282 -

RFQ

MUR2X120A10

Ficha técnica

Bulk - Active 2 Independent Standard 1000 V 120A 2.35 V @ 120 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1000 V -55°C ~ 175°C Chassis Mount
MUR2X120A12

MUR2X120A12

DIODE GEN PURP 1.2KV 120A SOT227

GeneSiC Semiconductor
3,120 -

RFQ

MUR2X120A12

Ficha técnica

Bulk - Active 2 Independent Standard 1200 V 120A 2.35 V @ 120 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1200 V -55°C ~ 175°C Chassis Mount
GC2X50MPS06-227

GC2X50MPS06-227

DIODE MOD SCHOT 650V 104A SOT227

GeneSiC Semiconductor
2,817 -

RFQ

GC2X50MPS06-227

Ficha técnica

Tube SiC Schottky MPS™ Active 2 Independent Silicon Carbide Schottky 650 V 104A (DC) 1.8 V @ 50 A No Recovery Time > 500mA (Io) 0 ns 10 µA @ 650 V -55°C ~ 175°C Chassis Mount
MSRT150100AD

MSRT150100AD

DIODE GEN 1KV 150A 3 TOWER

GeneSiC Semiconductor
3,910 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 1000 V 150A 1.1 V @ 150 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V -55°C ~ 150°C Chassis Mount
MSRT100100AD

MSRT100100AD

DIODE GEN 1KV 100A 3 TOWER

GeneSiC Semiconductor
3,437 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 1000 V 100A 1.1 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1000 V -55°C ~ 150°C Chassis Mount
MSRT100120AD

MSRT100120AD

DIODE GEN 1.2KV 100A 3 TOWER

GeneSiC Semiconductor
2,881 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 1200 V 100A 1.1 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1200 V -55°C ~ 150°C Chassis Mount
MSRT100140AD

MSRT100140AD

DIODE GEN 1.4KV 100A 3 TOWER

GeneSiC Semiconductor
2,094 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 1400 V 100A 1.1 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1400 V -55°C ~ 150°C Chassis Mount
MSRT100160AD

MSRT100160AD

DIODE GEN 1.6KV 100A 3 TOWER

GeneSiC Semiconductor
3,827 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 1600 V 100A 1.1 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 1600 V -55°C ~ 150°C Chassis Mount
MSRT10060AD

MSRT10060AD

DIODE GEN PURP 600V 100A 3 TOWER

GeneSiC Semiconductor
2,851 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 600 V 100A 1.1 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V -55°C ~ 150°C Chassis Mount
MSRT10080AD

MSRT10080AD

DIODE GEN PURP 800V 100A 3 TOWER

GeneSiC Semiconductor
2,776 -

RFQ

Bulk - Active 1 Pair Series Connection Standard 800 V 100A 1.1 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 800 V -55°C ~ 150°C Chassis Mount
MSRT250100A

MSRT250100A

DIODE MODULE 1KV 250A 3TOWER

GeneSiC Semiconductor
2,295 -

RFQ

Bulk - Active 1 Pair Common Cathode Standard 1000 V 250A (DC) 1.2 V @ 250 A Standard Recovery >500ns, > 200mA (Io) - 15 µA @ 600 V -55°C ~ 150°C Chassis Mount
MSRT250120A

MSRT250120A

DIODE MODULE 1.2KV 250A 3TOWER

GeneSiC Semiconductor
3,500 -

RFQ

Bulk - Active 1 Pair Common Cathode Standard 1200 V 250A (DC) 1.2 V @ 250 A Standard Recovery >500ns, > 200mA (Io) - 15 µA @ 600 V -55°C ~ 150°C Chassis Mount
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1800+ Fabricantes em todo o mundo
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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