Diodos - Retificadores - Matrizes

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series ProductStatus DiodeConfiguration DiodeType Voltage-DCReverse(Vr)(Max) Current-AverageRectified(Io)(perDiode) Voltage-Forward(Vf)(Max)@If Speed ReverseRecoveryTime(trr) Current-ReverseLeakage@Vr OperatingTemperature-Junction MountingType
MBR2X080A120

MBR2X080A120

DIODE SCHOTTKY 120V 80A SOT227

GeneSiC Semiconductor
3,183 -

RFQ

MBR2X080A120

Ficha técnica

Bulk - Active 2 Independent Schottky 120 V 80A 880 mV @ 80 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 120 V -40°C ~ 150°C Chassis Mount
MBR2X080A150

MBR2X080A150

DIODE SCHOTTKY 150V 80A SOT227

GeneSiC Semiconductor
2,628 -

RFQ

MBR2X080A150

Ficha técnica

Bulk - Active 2 Independent Schottky 150 V 80A 880 mV @ 80 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -40°C ~ 150°C Chassis Mount
MBR2X080A180

MBR2X080A180

DIODE SCHOTTKY 180V 80A SOT227

GeneSiC Semiconductor
3,592 -

RFQ

MBR2X080A180

Ficha técnica

Bulk - Active 2 Independent Schottky 180 V 80A 920 mV @ 80 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 180 V -40°C ~ 150°C Chassis Mount
MBR2X080A200

MBR2X080A200

DIODE SCHOTTKY 200V 80A SOT227

GeneSiC Semiconductor
2,073 -

RFQ

MBR2X080A200

Ficha técnica

Bulk - Active 2 Independent Schottky 200 V 80A 920 mV @ 80 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -40°C ~ 150°C Chassis Mount
MUR2X100A10

MUR2X100A10

DIODE GEN PURP 1KV 100A SOT227

GeneSiC Semiconductor
3,590 -

RFQ

MUR2X100A10

Ficha técnica

Bulk - Active 2 Independent Standard 1000 V 100A 2.35 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1000 V -55°C ~ 175°C Chassis Mount
MUR2X100A12

MUR2X100A12

DIODE GEN PURP 1.2KV 100A SOT227

GeneSiC Semiconductor
3,733 -

RFQ

MUR2X100A12

Ficha técnica

Bulk - Active 2 Independent Standard 1200 V 100A 2.35 V @ 100 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 1200 V -55°C ~ 175°C Chassis Mount
MBR2X100A045

MBR2X100A045

DIODE SCHOTTKY 45V 100A SOT227

GeneSiC Semiconductor
3,481 -

RFQ

MBR2X100A045

Ficha técnica

Bulk - Active 2 Independent Schottky 45 V 100A 700 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 45 V -40°C ~ 150°C Chassis Mount
MBR2X100A060

MBR2X100A060

DIODE SCHOTTKY 60V 100A SOT227

GeneSiC Semiconductor
2,435 -

RFQ

MBR2X100A060

Ficha técnica

Bulk - Active 2 Independent Schottky 60 V 100A 750 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 60 V -40°C ~ 150°C Chassis Mount
MBR2X100A080

MBR2X100A080

DIODE SCHOTTKY 80V 100A SOT227

GeneSiC Semiconductor
3,731 -

RFQ

MBR2X100A080

Ficha técnica

Bulk - Active 2 Independent Schottky 80 V 100A 840 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 80 V -40°C ~ 150°C Chassis Mount
MBR2X100A100

MBR2X100A100

DIODE SCHOTTKY 100V 100A SOT227

GeneSiC Semiconductor
3,349 -

RFQ

MBR2X100A100

Ficha técnica

Bulk - Active 2 Independent Schottky 100 V 100A 840 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 1 mA @ 100 V -40°C ~ 150°C Chassis Mount
MBR2X100A120

MBR2X100A120

DIODE SCHOTTKY 120V 100A SOT227

GeneSiC Semiconductor
3,553 -

RFQ

MBR2X100A120

Ficha técnica

Bulk - Active 2 Independent Schottky 120 V 100A 880 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 120 V -40°C ~ 150°C Chassis Mount
MBR2X100A150

MBR2X100A150

DIODE SCHOTTKY 150V 100A SOT227

GeneSiC Semiconductor
3,720 -

RFQ

MBR2X100A150

Ficha técnica

Bulk - Active 2 Independent Schottky 150 V 100A 880 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 150 V -40°C ~ 150°C Chassis Mount
MBR2X100A200

MBR2X100A200

DIODE SCHOTTKY 200V 100A SOT227

GeneSiC Semiconductor
3,941 -

RFQ

MBR2X100A200

Ficha técnica

Bulk - Active 2 Independent Schottky 200 V 100A 920 mV @ 100 A Fast Recovery =< 500ns, > 200mA (Io) - 3 mA @ 200 V -40°C ~ 150°C Chassis Mount
MUR2X120A02

MUR2X120A02

DIODE GEN PURP 200V 120A SOT227

GeneSiC Semiconductor
2,544 -

RFQ

MUR2X120A02

Ficha técnica

Bulk - Active 2 Independent Standard 200 V 120A 1 V @ 120 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 200 V -55°C ~ 175°C Chassis Mount
MUR2X120A04

MUR2X120A04

DIODE GEN PURP 400V 120A SOT227

GeneSiC Semiconductor
2,897 -

RFQ

MUR2X120A04

Ficha técnica

Bulk - Active 2 Independent Standard 400 V 120A 1.3 V @ 120 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 400 V -55°C ~ 175°C Chassis Mount
MUR2X120A06

MUR2X120A06

DIODE GEN PURP 600V 120A SOT227

GeneSiC Semiconductor
2,854 -

RFQ

MUR2X120A06

Ficha técnica

Bulk - Active 2 Independent Standard 600 V 120A 1.3 V @ 120 A Standard Recovery >500ns, > 200mA (Io) - 25 µA @ 600 V -55°C ~ 175°C Chassis Mount
MSRT200100A

MSRT200100A

DIODE MODULE 1KV 200A 3TOWER

GeneSiC Semiconductor
3,577 -

RFQ

MSRT200100A

Ficha técnica

Bulk - Active 1 Pair Common Cathode Standard 1000 V 200A (DC) 1.2 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V -40°C ~ 175°C Chassis Mount
MSRT200120A

MSRT200120A

DIODE MODULE 1.2KV 200A 3TOWER

GeneSiC Semiconductor
3,912 -

RFQ

Bulk - Active 1 Pair Common Cathode Standard 1200 V 200A (DC) 1.2 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V -40°C ~ 175°C Chassis Mount
MSRT200140A

MSRT200140A

DIODE MODULE 1.4KV 200A 3TOWER

GeneSiC Semiconductor
2,826 -

RFQ

Bulk - Active 1 Pair Common Cathode Standard 1400 V 200A (DC) 1.2 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V -40°C ~ 175°C Chassis Mount
MSRT200160A

MSRT200160A

DIODE MODULE 1.6KV 200A 3TOWER

GeneSiC Semiconductor
2,397 -

RFQ

Bulk - Active 1 Pair Common Cathode Standard 1600 V 200A (DC) 1.2 V @ 200 A Standard Recovery >500ns, > 200mA (Io) - 10 µA @ 600 V -40°C ~ 175°C Chassis Mount
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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