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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VS-12EWH06FNTRL-M3DIODE GEN PURPOSE 600V 12A DPAK Vishay General Semiconductor - Diodes Division |
2,053 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 10 µA @ 600 V | 600 V | 12A | -40°C ~ 150°C | 2.5 V @ 12 A |
|
JAN1N5554/TRSTD RECTIFIER Microchip Technology |
3,358 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Military, MIL-PRF-19500/420 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 1 V | 1000 V | 3A | -65°C ~ 175°C | 1.3 V @ 9 A |
|
|
1N5619E3/TRSTD RECTIFIER Microchip Technology |
2,634 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 25pF @ 12V, 1MHz | - | 500 µA @ 400 V | 600 V | 1A | -65°C ~ 200°C | 1.6 V @ 3 A | |
|
VI20120S-M3/4WDIODE SCHOTTKY 20A 120V TO-262AA Vishay General Semiconductor - Diodes Division |
3,096 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 300 µA @ 120 V | 120 V | 20A | -40°C ~ 150°C | 1.12 V @ 20 A | |
|
MSC010SDA170BDIODE SCHOTTKY 1700V TO-247 Microchip Technology |
3,579 | - |
RFQ |
Ficha técnica |
Tube | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
|
VS-12EWH06FNTR-M3DIODE GEN PURPOSE 600V 12A DPAK Vishay General Semiconductor - Diodes Division |
2,606 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 10 µA @ 600 V | 600 V | 12A | -65°C ~ 175°C | 2.5 V @ 12 A |
|
1N3673ARDIODE GEN PURP REV 1KV 12A DO4 GeneSiC Semiconductor |
3,469 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 1000 V | 12A | -65°C ~ 200°C | 1.1 V @ 12 A | |
|
|
1N5811US/TRUFR,FRR Microchip Technology |
2,293 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 60pF @ 10V, 1MHz | 30 ns | 5 µA @ 150 V | 150 V | 3A | -65°C ~ 175°C | 875 mV @ 4 A | |
|
|
JAN1N5552DIODE GEN PURP 600V 3A AXIAL Microchip Technology |
3,646 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/420 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 2 µs | 1 µA @ 600 V | 600 V | 3A | -65°C ~ 175°C | 1.2 V @ 9 A |
|
NRVB1240MFST1GDIODE SCHOTTKY 40V 12A 5DFN onsemi |
3,351 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 12A | -55°C ~ 150°C | 680 mV @ 12 A | |
|
VS-40HFR140DIODE GEN PURP 1.4KV 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,816 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 4.5 mA @ 1400 V | 1400 V | 40A | -65°C ~ 160°C | 1.5 V @ 125 A | |
|
|
VS-12EWH06FNTRR-M3DIODE GEN PURPOSE 600V 12A DPAK Vishay General Semiconductor - Diodes Division |
3,026 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 26 ns | 10 µA @ 600 V | 600 V | 12A | -65°C ~ 175°C | 2.5 V @ 12 A |
|
JANTX1N6642/TRSIGNAL/COMPUTER DIODE Microchip Technology |
3,683 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/578 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 5pF @ 0V, 1MHz | 20 ns | 500 nA @ 75 V | 75 V | 300mA | -65°C ~ 175°C | 1.2 V @ 100 mA | |
|
|
1N5623E3/TRSTD RECTIFIER Microchip Technology |
3,339 | - |
RFQ |
Tape & Reel (TR) | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
1N1202ARDIODE GEN PURP REV 200V 12A DO5 GeneSiC Semiconductor |
3,646 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 10 µA @ 50 V | 200 V | 12A | -65°C ~ 200°C | 1.1 V @ 12 A | |
|
|
NRVB1240MFST3GDIODE SCHOTTKY 40V 12A 5DFN onsemi |
2,211 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 12A | -55°C ~ 150°C | 680 mV @ 12 A | |
|
60SPB045ADIODE SCHOTTKY 45V 60A SPD-2A SMC Diode Solutions |
2,119 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 2400pF @ 5V, 1MHz | - | 4.5 mA @ 45 V | 45 V | 60A | -55°C ~ 150°C | 600 mV @ 60 A | |
|
RL 4ZDIODE GEN PURP 200V 3.5A AXIAL Sanken |
2,972 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 50 ns | 150 µA @ 200 V | 200 V | 3.5A | -40°C ~ 150°C | 950 mV @ 3.5 A | |
|
|
JAN1N5623DIODE GEN PURP 1KV 1A AXIAL Microchip Technology |
3,961 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 500 ns | 500 nA @ 1000 V | 1000 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A |
|
|
VS-80PF160WDIODE GEN PURP 1.6KV 80A DO203AB Vishay General Semiconductor - Diodes Division |
3,449 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | - | 1600 V | 80A | -55°C ~ 150°C | 1.46 V @ 220 A |
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