Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
62SPB030A

62SPB030A

DIODE SCHOTTKY 30V 60A SPD-2A

SMC Diode Solutions
3,299 -

RFQ

62SPB030A

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 3300pF @ 5V, 1MHz - 6 mA @ 30 V 30 V 60A -55°C ~ 150°C 530 mV @ 60 A
MBRF1090-M3/4W

MBRF1090-M3/4W

DIODE SCHOTTKY 90V 10A ITO220AC

Vishay General Semiconductor - Diodes Division
2,618 -

RFQ

MBRF1090-M3/4W

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 90 V 90 V 10A -65°C ~ 150°C 800 mV @ 10 A
1N5620US

1N5620US

DIODE GEN PURP 800V 1A D5A

Microchip Technology
3,194 -

RFQ

1N5620US

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 2 µs 500 nA @ 800 V 800 V 1A -65°C ~ 200°C 1.3 V @ 3 A
JANTX1N5804

JANTX1N5804

DIODE GEN PURP 100V 1A AXIAL

Microchip Technology
2,113 -

RFQ

Bulk Military, MIL-PRF-19500/477 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 25pF @ 10V, 1MHz 25 ns 1 µA @ 100 V 100 V 1A -65°C ~ 175°C 875 mV @ 1 A
MBRF40250TG

MBRF40250TG

DIODE SCHOTTKY 250V 40A TO220FP

Rochester Electronics, LLC
3,687 -

RFQ

MBRF40250TG

Ficha técnica

Bulk,Tube,Tube SWITCHMODE™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 500pF @ 5V, 1MHz 35 ns 30 µA @ 250 V 250 V 40A -65°C ~ 150°C 970 mV @ 40 A
FE6A

FE6A

DIODE SFR D8X7.5 50V 6A

Diotec Semiconductor
1,000 -

RFQ

FE6A

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 5 µA @ 50 V 50 V 6A -50°C ~ 175°C 980 mV @ 5 A
STTH1512G

STTH1512G

DIODE GEN PURP 1.2KV 15A D2PAK

STMicroelectronics
3,757 -

RFQ

STTH1512G

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 105 ns 15 µA @ 1200 V 1200 V 15A 175°C (Max) 2.1 V @ 15 A
SK54BL_R1_00001

SK54BL_R1_00001

SMB, SKY

Panjit International Inc.
893 -

RFQ

SK54BL_R1_00001

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 100 µA @ 40 V 40 V 5A -55°C ~ 150°C 460 mV @ 5 A
TST40L200CW

TST40L200CW

DIODE SCHOTTKY 200V 20A TO220AB

Taiwan Semiconductor Corporation
2,691 -

RFQ

TST40L200CW

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 200 V 200 V 20A -55°C ~ 150°C 880 mV @ 20 A
UF600B

UF600B

DIODE UFR D8X7.5 100V 6A

Diotec Semiconductor
1,000 -

RFQ

UF600B

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 10 µA @ 100 V 100 V 6A -50°C ~ 175°C 1 V @ 5 A
STTH3010D

STTH3010D

DIODE GEN PURP 1KV 30A TO220AC

STMicroelectronics
2,183 -

RFQ

STTH3010D

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 100 ns 15 µA @ 1000 V 1000 V 30A 175°C (Max) 2 V @ 30 A
UF600G

UF600G

DIODE UFR D8X7.5 400V 6A

Diotec Semiconductor
1,000 -

RFQ

UF600G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 75 ns 10 µA @ 400 V 400 V 6A -50°C ~ 175°C 1.25 V @ 5 A
DSI30-16AS-TUB

DSI30-16AS-TUB

DIODE GEN PURP 1.6KV 30A TO263

IXYS
2,844 -

RFQ

DSI30-16AS-TUB

Ficha técnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 400V, 1MHz - 40 µA @ 1600 V 1600 V 30A -40°C ~ 175°C 1.29 V @ 30 A
FE6B

FE6B

DIODE SFR D8X7.5 100V 6A

Diotec Semiconductor
1,000 -

RFQ

FE6B

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 5 µA @ 100 V 100 V 6A -50°C ~ 175°C 980 mV @ 5 A
IDH06G65C5XKSA2

IDH06G65C5XKSA2

DIODE SCHOTTKY 650V 6A TO220-2-1

Infineon Technologies
3,670 -

RFQ

IDH06G65C5XKSA2

Ficha técnica

Tube CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 190pF @ 1V, 1MHz 0 ns 110 µA @ 650 V 650 V 6A (DC) -55°C ~ 175°C 1.7 V @ 6 A
1N5408RLG

1N5408RLG

1N5408 DIODE 3A/1000V RECTIFIER

TubeDepot
135 -

RFQ

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 10 µA @ 1000 V 1000 V 3A -65°C ~ 150°C 1 V @ 3 A
VS-8EWS08S-M3

VS-8EWS08S-M3

DIODE GEN PURP 800V 8A TO252AA

Vishay General Semiconductor - Diodes Division
3,818 -

RFQ

VS-8EWS08S-M3

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - - 50 µA @ 800 V 800 V 8A -55°C ~ 150°C 1.1 V @ 8 A
1N5404

1N5404

1N5404 DIODE 3A / 400V RECTIFIER

TubeDepot
109 -

RFQ

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 30pF @ 4V, 1MHz - 500 nA @ 400 V 400 V 3A -55°C ~ 150°C 980 mV @ 3 A
VS-8EWS12S-M3

VS-8EWS12S-M3

DIODE GEN PURP 1.2KV 8A TO252AA

Vishay General Semiconductor - Diodes Division
2,080 -

RFQ

VS-8EWS12S-M3

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - - 50 µA @ 1200 V 1200 V 8A -55°C ~ 150°C 1.1 V @ 8 A
1N5061

1N5061

R-600PRV 1A

NTE Electronics, Inc
277 -

RFQ

1N5061

Ficha técnica

Bag RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 40pF @ 0V, 1MHz 4 µs 1 µA @ 600 V 600 V 2A -55°C ~ 175°C 1.15 V @ 2.5 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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