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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
1N5817 R-SCHOTTKY 20V 1A NTE Electronics, Inc	220	-	RFQ	Ficha técnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	110pF @ 4V, 1MHz	-	500 µA @ 20 V	20 V	1A	-65°C ~ 125°C	450 mV @ 1 A
SDUR6060W DIODE GEN PURP 600V 60A TO247AC SMC Diode Solutions	2,240	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	50 ns	100 µA @ 600 V	600 V	60A	-55°C ~ 150°C	2 V @ 60 A
UF4007 R-1000V 1A ULTRA FAST NTE Electronics, Inc	160	-	RFQ	Ficha técnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	17pF @ 4V, 1MHz	75 ns	10 µA @ 1000 V	1000 V	1A	-65°C ~ 150°C	1.7 V @ 1 A
C3D04060A DIODE SCHOTTKY 600V 4A TO220-2 Wolfspeed, Inc.	3,973	-	RFQ	Ficha técnica	Tube	Z-Rec®	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Not For New Designs	Through Hole	251pF @ 0V, 1MHz	0 ns	50 µA @ 600 V	600 V	13.5A (DC)	-55°C ~ 175°C	1.8 V @ 4 A
RGP15G R-400V 1.5A FAST SW NTE Electronics, Inc	500	-	RFQ	Ficha técnica	Bag	RGP15	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	25pF @ 4V, 1MHz	150 ns	5 µA @ 400 V	400 V	1.5A	-	1.3 V @ 1.5 A
C3D04060F DIODE SCHOTTKY 600V 4A TO220-F2 Wolfspeed, Inc.	3,144	-	RFQ	Ficha técnica	Tube	Z-Rec®	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	251pF @ 0V, 1MHz	0 ns	50 µA @ 600 V	600 V	6A (DC)	-55°C ~ 175°C	1.7 V @ 4 A
RGP15D R-200V 1.5A FAST SW NTE Electronics, Inc	183	-	RFQ	Ficha técnica	Bag	RGP15	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	25pF @ 4V, 1MHz	150 ns	5 µA @ 200 V	200 V	1.5A	-	1.3 V @ 1.5 A
DNA30E2200PZ-TRL DIODE GEN PURP 2.2KV 30A TO263 IXYS	3,799	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	7pF @ 700V, 1MHz	-	40 µA @ 2200 V	2200 V	30A	-55°C ~ 150°C	1.26 V @ 30 A
P600S DIODE STD D8X7.5 1200V 6A Diotec Semiconductor	1,000	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	1.5 µs	10 µA @ 1200 V	1200 V	6A	-50°C ~ 175°C	1.1 V @ 6 A
DNA30EM2200PZ-TRL DIODE GEN PURP 2.2KV 30A TO263 IXYS	3,566	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	7pF @ 700V, 1MHz	-	40 µA @ 2200 V	2200 V	30A	-55°C ~ 150°C	1.26 V @ 30 A
NTE620 D-400V .5AMP SURFACE MNT NTE Electronics, Inc	754	-	RFQ	Ficha técnica	Bag		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	7pF @ 4V, 1MHz	-	5 µA @ 400 V	400 V	500mA	-65°C ~ 175°C	1.2 V @ 500 mA
VS-20ETS12-M3 DIODE GEN PURP 1.2KV 20A TO220AC Vishay General Semiconductor - Diodes Division	2,433	-	RFQ	Ficha técnica	Tube		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	100 µA @ 1200 V	1200 V	20A	-40°C ~ 150°C	1 V @ 10 A
GI851/MR851 R- 100 PRV 3A NTE Electronics, Inc	933	-	RFQ	Ficha técnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	28pF @ 4V, 1MHz	200 ns	10 µA @ 100 V	100 V	3A	-50°C ~ 150°C	1.25 V @ 3 A
APT60D40BG DIODE GEN PURP 400V 60A TO247 Microchip Technology	3,466	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	37 ns	250 µA @ 400 V	400 V	60A	-55°C ~ 175°C	1.5 V @ 60 A
GI852/MR852 R-200 PRV 3A NTE Electronics, Inc	188	-	RFQ	Ficha técnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	28pF @ 4V, 1MHz	200 ns	10 µA @ 200 V	200 V	3A	-50°C ~ 150°C	1.25 V @ 3 A
C4D02120E DIODE SCHOTTKY 1.2KV 2A TO252-2 Wolfspeed, Inc.	2,031	-	RFQ	Ficha técnica	Tube	Z-Rec®	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	167pF @ 0V, 1MHz	0 ns	50 µA @ 1200 V	1200 V	10A (DC)	-55°C ~ 175°C	1.8 V @ 2 A
GI854/MR854 R-400 PRV 3A NTE Electronics, Inc	104	-	RFQ	Ficha técnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	28pF @ 4V, 1MHz	200 ns	10 µA @ 400 V	400 V	3A	-50°C ~ 150°C	1.25 V @ 3 A
LSIC2SD065C20A SIC SCHOTTKY DIOD 650V 20A TO252 Littelfuse Inc.	3,327	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	Gen2	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	960pF @ 1V, 1MHz	0 ns	50 µA @ 650 V	650 V	45A (DC)	-55°C ~ 175°C	1.8 V @ 20 A
VS-80PFR40W DIODE GEN PURP 400V 80A DO203AB Vishay General Semiconductor - Diodes Division	3,055	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Stud Mount	-	-	-	400 V	80A	-55°C ~ 180°C	1.4 V @ 220 A
SD125SC150A.T2 PIV 150V IO 15A CHIP SIZE 125MIL SMC Diode Solutions	3,293	-	RFQ	Ficha técnica	Tray		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	500pF @ 5V, 1MHz	-	500 µA @ 150 V	150 V	15A	-55°C ~ 200°C	890 mV @ 15 A