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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IDH05G120C5XKSA1DIODE SCHOTTKY 1.2KV 5A TO220-2 Infineon Technologies |
2,308 | - |
RFQ |
Ficha técnica |
Tube | CoolSiC™+ | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 301pF @ 1V, 1MHz | 0 ns | 33 µA @ 1200 V | 1200 V | 5A (DC) | -55°C ~ 175°C | 1.8 V @ 5 A |
|
P1200GDIODE STD D8X7.5 400V 12A Diotec Semiconductor |
1,000 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 400 V | 400 V | 12A | -50°C ~ 150°C | 950 mV @ 12 A | |
|
DSI45-12ADIODE GEN PURP 1.2KV 45A TO247AD IXYS |
2,792 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 18pF @ 400V, 1MHz | - | 20 µA @ 1200 V | 1200 V | 45A | -40°C ~ 175°C | 1.28 V @ 45 A | |
|
RUR880RECTIFIER DIODE, 8A, 800V Rochester Electronics, LLC |
743 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 110 ns | 25 µA @ 800 V | 800 V | 8A | -55°C ~ 175°C | 1.8 V @ 8 A | |
|
JAN1N5617DIODE GEN PURP 400V 1A AXIAL Microchip Technology |
3,034 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/429 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 150 ns | 500 nA @ 400 V | 400 V | 1A | -65°C ~ 175°C | 1.6 V @ 3 A |
|
|
RUR8100RECTIFIER DIODE, 8A, 1000V Rochester Electronics, LLC |
894 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 110 ns | 25 µA @ 1000 V | 1000 V | 8A | -55°C ~ 175°C | 1.8 V @ 8 A | |
|
STPSC20065GY-TRDIODES AND RECTIFIERS STMicroelectronics |
2,795 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, ECOPACK®2 | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Surface Mount | 1250pF @ 0V, 1MHz | 0 ns | 150 µA @ 600 V | 650 V | 20A | -40°C ~ 175°C | 1.45 V @ 20 A |
|
|
FFSH10120A-F155SIC DIODE GEN1.0 TO247-2L LL onsemi |
3,833 | - |
RFQ |
Ficha técnica |
Tray | RoHS | No Recovery Time > 500mA (Io) | Silicon Carbide Schottky | Active | Through Hole | 612pF @ 1V, 100kHz | 0 ns | 200 µA @ 1200 V | 1200 V | 17A (DC) | -55°C ~ 175°C | 1.75 V @ 10 A | |
|
|
SDT10A60VCTFPSCHOTTKY RECTIFIER ITO-220AB Diodes Incorporated |
2,917 | - |
RFQ |
Tube | RoHS | - | - | Active | - | - | - | - | - | - | - | - | ||
|
|
1N6639USDIODE GEN PURPOSE Microchip Technology |
3,085 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | - | - | Active | - | - | - | - | - | - | - | - | |
|
SF5403-TRDIODE GEN PURP 300V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,676 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 300 V | 300 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
1N6622USDIODE GEN PURP 660V 1.2A A-MELF Microchip Technology |
2,124 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 10V, 1MHz | 30 ns | 500 nA @ 660 V | 660 V | 1.2A | -65°C ~ 150°C | 1.4 V @ 1.2 A | |
|
1N5551USE3STD RECTIFIER Microchip Technology |
2,594 | - |
RFQ |
Ficha técnica |
Bulk | Military, MIL-PRF-19500/420 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 2 µs | 1 µA @ 400 V | 400 V | 3A | -65°C ~ 175°C | 1.2 V @ 9 A |
|
|
VS-80PF80WDIODE GEN PURP 800V 80A DO203AB Vishay General Semiconductor - Diodes Division |
2,597 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | - | 800 V | 80A | -55°C ~ 180°C | 1.4 V @ 220 A | |
|
VI20100S-M3/4WDIODE SCHOTTKY 20A 100V TO-262AA Vishay General Semiconductor - Diodes Division |
3,201 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 100 V | 100 V | 20A | -40°C ~ 150°C | 900 mV @ 20 A | |
|
JANTXV1N4249/TRRECTIFIER UFR,FRR Microchip Technology |
2,216 | - |
RFQ |
Tape & Reel (TR) | Military, MIL-PRF-19500/286 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 5 µs | 1 µA @ 1 V | 1000 V | 1A | -65°C ~ 175°C | 1.3 V @ 3 A | |
|
RGP25B-E3/54DIODE GEN PURP 100V 2.5A DO201AD Vishay General Semiconductor - Diodes Division |
3,476 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 60pF @ 4V, 1MHz | 150 ns | 5 µA @ 100 V | 100 V | 2.5A | -65°C ~ 175°C | 1.3 V @ 2.5 A |
|
VS-41HF100DIODE GEN PURP 1KV 40A DO203AB Vishay General Semiconductor - Diodes Division |
2,734 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Chassis, Stud Mount | - | - | 9 mA @ 1000 V | 1000 V | 40A | -65°C ~ 190°C | 1.3 V @ 125 A | |
|
APT100DL60BGDIODE GEN PURP 600V 100A TO247 Microchip Technology |
3,240 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | - | 600 V | 100A | -55°C ~ 175°C | 1.6 V @ 100 A | |
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|
VS-80PFR80WDIODE GEN PURP 800V 80A DO203AB Vishay General Semiconductor - Diodes Division |
3,998 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | - | 800 V | 80A | -55°C ~ 180°C | 1.4 V @ 220 A |
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