Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
DSEI60-02A

DSEI60-02A

DIODE GEN PURP 200V 69A TO247AD

IXYS
2,238 -

RFQ

DSEI60-02A

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 50 µA @ 200 V 200 V 69A -40°C ~ 150°C 1.08 V @ 60 A
SK2545YD2

SK2545YD2

SCHOTTKY D2PAK 45V 25A

Diotec Semiconductor
1,000 -

RFQ

SK2545YD2

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 200 µA @ 45 V 45 V 25A -50°C ~ 150°C 580 mV @ 25 A
STBR6008WY

STBR6008WY

AUTOMOTIVE 800 V, 60 A BRIDGE

STMicroelectronics
3,820 -

RFQ

STBR6008WY

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 5 µA @ 800 V 800 V 60A -40°C ~ 175°C 1.1 V @ 60 A
SBJ1845

SBJ1845

SCHOTTKY ITO-220AC 45V 18A

Diotec Semiconductor
1,000 -

RFQ

SBJ1845

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 45 V 45 V 18A -50°C ~ 150°C 580 V @ 18 A
DH20-18A

DH20-18A

DIODE GEN PURP 1.8KV 20A TO247

IXYS
2,385 -

RFQ

DH20-18A

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 300 ns 50 µA @ 1800 V 1800 V 20A -55°C ~ 150°C 2.24 V @ 20 A
SBJ1840

SBJ1840

SCHOTTKY ITO-220AC 40V 18A

Diotec Semiconductor
1,000 -

RFQ

SBJ1840

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 40 V 40 V 18A -50°C ~ 150°C 580 mV @ 18 A
STTH60L06W

STTH60L06W

DIODE GEN PURP 600V 60A DO247

STMicroelectronics
2,466 -

RFQ

STTH60L06W

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 105 ns 50 µA @ 600 V 600 V 60A 175°C (Max) 1.55 V @ 60 A
1N5822

1N5822

R-SCHOTTKY 40V 3A

NTE Electronics, Inc
656 -

RFQ

1N5822

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 190pF @ 4V, 1MHz - 500 µA @ 40 V 40 V 3A -65°C ~ 125°C 525 mV @ 3 A
VS-40EPS12-M3

VS-40EPS12-M3

DIODE GEN PURP 1.2KV 40A TO247AC

Vishay General Semiconductor - Diodes Division
3,177 -

RFQ

VS-40EPS12-M3

Ficha técnica

Tube RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 100 µA @ 1200 V 1200 V 40A -40°C ~ 150°C 1 V @ 20 A
NTE593

NTE593

D-SI HI SPEED SWITCH

NTE Electronics, Inc
279 -

RFQ

NTE593

Ficha técnica

Bag RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 2pF @ 0V, 1MHz 6 ns 1 µA @ 75 V 75 V 250mA 150°C 1.25 V @ 150 mA
CDLL5819

CDLL5819

DIODE SCHOTTKY 45V 1A DO213AB

Microchip Technology
2,235 -

RFQ

CDLL5819

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 70pF @ 5V, 1MHz - 50 µA @ 45 V 45 V 1A -65°C ~ 125°C 490 mV @ 1 A
NTE592

NTE592

D-SI HI VLTG GEN PURP

NTE Electronics, Inc
3,617 -

RFQ

NTE592

Ficha técnica

Bag RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount 5pF @ 0V, 1MHz 50 ns 100 nA @ 200 V 200 V 200mA (DC) 150°C 1.25 V @ 200 mA
DSEI60-10A

DSEI60-10A

DIODE GEN PURP 1KV 60A TO247AD

IXYS
2,484 -

RFQ

DSEI60-10A

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 50 ns 3 mA @ 1000 V 1000 V 60A -40°C ~ 150°C 2.3 V @ 60 A
PX1500B

PX1500B

DIODE STD D8X7.5 100V 15A

Diotec Semiconductor
1,000 -

RFQ

PX1500B

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 1.5 µs 10 µA @ 100 V 100 V 15A -50°C ~ 175°C 1 V @ 15 A
JANTX1N3614

JANTX1N3614

DIODE GEN PURP 800V 1A AXIAL

Microchip Technology
3,712 -

RFQ

JANTX1N3614

Ficha técnica

Bulk Military, MIL-PRF-19500/228 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - - 1 µA @ 800 V 800 V 1A -65°C ~ 175°C 1.1 V @ 1 A
CDLL5196

CDLL5196

DIODE GEN PURP 250V 200MA DO213

Microchip Technology
2,757 -

RFQ

CDLL5196

Ficha técnica

Bulk RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Surface Mount - - 100 µA @ 250 V 250 V 200mA -65°C ~ 175°C 1 V @ 100 mA
MBR2040FCTE3/TU

MBR2040FCTE3/TU

DIODE SCHOTTKY 20A 40V ITO220AB

Microchip Technology
2,995 -

RFQ

Tube RoHS - - Active - - - - - - - -
TSPB15U100S S2G

TSPB15U100S S2G

DIODE SCHOTTKY 100V 15A SMPC4.0

Taiwan Semiconductor Corporation
2,706 -

RFQ

TSPB15U100S S2G

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 250 µA @ 100 V 100 V 15A -55°C ~ 150°C 700 mV @ 15 A
1N5620US/TR

1N5620US/TR

STD RECTIFIER

Microchip Technology
2,544 -

RFQ

1N5620US/TR

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - 2 µs 500 nA @ 800 V 800 V 1A -65°C ~ 200°C 1.3 V @ 3 A
VS-95PF80

VS-95PF80

DIODE GEN PURP 800V 95A DO203AB

Vishay General Semiconductor - Diodes Division
2,602 -

RFQ

VS-95PF80

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 800 V 95A -55°C ~ 180°C 1.4 V @ 267 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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