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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
JAN1N6642/TR SIGNAL/COMPUTER DIODE Microchip Technology	2,930	-	RFQ		Tape & Reel (TR)	Military, MIL-PRF-19500/578	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	5pF @ 0V, 1MHz	5 ns	500 nA @ 75 V	75 V	300mA	-65°C ~ 175°C	1.2 V @ 100 mA
SBT1090 SCHOTTKY TO-220AC 90V 10A Diotec Semiconductor	1,000	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	300 µA @ 90 V	90 V	10A	-50°C ~ 150°C	850 mV @ 10 A
STTH30R06PI DIODE GEN PURP 600V 30A DOP3I STMicroelectronics	2,872	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	70 ns	25 µA @ 600 V	600 V	30A	175°C (Max)	1.85 V @ 30 A
SBT1050 SCHOTTKY TO-220AC 50V 10A Diotec Semiconductor	1,000	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	300 µA @ 50 V	50 V	10A	-50°C ~ 150°C	700 mV @ 10 A
FFSH1065B-F085 650V 10A SIC SBD GEN1.5 onsemi	3,817	-	RFQ	Ficha técnica	Tube	Automotive, AEC-Q101	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	421pF @ 1V, 100kHz	0 ns	40 µA @ 650 V	650 V	11.5A (DC)	-55°C ~ 175°C	-
SBT1060 SCHOTTKY TO-220AC 60V 10A Diotec Semiconductor	1,000	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	300 µA @ 60 V	60 V	10A	-50°C ~ 150°C	700 mV @ 10 A
DSA1-18D DIODE AVALANCHE 1.8KV 2.3A IXYS	3,975	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	-	700 µA @ 1800 V	1800 V	2.3A	-40°C ~ 150°C	1.34 V @ 7 A
UF5400 R-50V 3A ULTRA FAST NTE Electronics, Inc	368	-	RFQ	Ficha técnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	45pF @ 4V, 1MHz	50 ns	10 µA @ 50 V	50 V	3A	-	1 V @ 3 A
STTH3010PI DIODE GEN PURP 1KV 30A DOP3I STMicroelectronics	2,378	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	100 ns	15 µA @ 1000 V	1000 V	30A	175°C (Max)	2 V @ 30 A
SBT1020 SCHOTTKY DIODE, TO-220AC, 20V, 1 Diotec Semiconductor	1,000	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	300 µA @ 20 V	20 V	10A	-50°C ~ 150°C	550 mV @ 10 A
SCS320AJTLL DIODES SILICON CARBIDE Rohm Semiconductor	3,260	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	1000pF @ 1V, 1MHz	0 ns	100 µA @ 650 V	650 V	20A (DC)	175°C (Max)	1.5 V @ 20 A
SBT1040 SCHOTTKY DIODE, TO-220AC, 40V, 1 Diotec Semiconductor	1,000	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	300 µA @ 40 V	40 V	10A	-50°C ~ 150°C	550 mV @ 10 A
RURG8060 DIODE GEN PURP 600V 80A TO247-2 Rochester Electronics, LLC	2,375	-	RFQ	Ficha técnica	Bulk,Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	85 ns	250 µA @ 600 V	600 V	80A	-65°C ~ 175°C	1.6 V @ 80 A
SBT1030 SCHOTTKY DIODE, TO-220AC, 30V, 1 Diotec Semiconductor	1,000	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	-	-	300 µA @ 30 V	30 V	10A	-50°C ~ 150°C	550 mV @ 10 A
IDH10G65C6XKSA1 DIODE SCHOTTKY 650V 24A TO220-2 Infineon Technologies	2,095	-	RFQ	Ficha técnica	Tube		RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	495pF @ 1V, 1MHz	0 ns	33 µA @ 420 V	650 V	24A (DC)	-55°C ~ 175°C	1.35 V @ 10 A
RURP820 8A, 200V ULTRAFAST DIODE Rochester Electronics, LLC	900	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Avalanche	Active	Through Hole	-	30 ns	100 µA @ 200 V	200 V	8A	-65°C ~ 175°C	975 mV @ 8 A
APT60D100BG DIODE GEN PURP 1KV 60A TO247 Microchip Technology	3,348	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	280 ns	250 µA @ 1000 V	1000 V	60A	-55°C ~ 175°C	2.5 V @ 60 A
UF5401 R-100V 3A ULTRA FAST NTE Electronics, Inc	592	-	RFQ	Ficha técnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	45pF @ 4V, 1MHz	50 ns	10 µA @ 100 V	100 V	3A	-	1 V @ 3 A
IDH10G65C5XKSA2 DIODE SCHOTKY 650V 10A TO220-2-1 Infineon Technologies	2,456	-	RFQ	Ficha técnica	Tube	CoolSiC™+	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Through Hole	300pF @ 1V, 1MHz	0 ns	180 µA @ 650 V	650 V	10A (DC)	-55°C ~ 175°C	1.7 V @ 10 A
1N5820 R-SCHOTTKY 20V 3A NTE Electronics, Inc	366	-	RFQ	Ficha técnica	Bag		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Through Hole	190pF @ 4V, 1MHz	-	500 µA @ 20 V	20 V	3A	-65°C ~ 125°C	475 mV @ 3 A