+86 075582561136
Carregar BOM
Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
VI20100SG-M3/4WDIODE SCHOTTKY 20A 100V TO-262AA Vishay General Semiconductor - Diodes Division |
3,066 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 350 µA @ 100 V | 100 V | 20A | -40°C ~ 150°C | 1.07 V @ 20 A | |
|
VS-20TQ045THN3SCHOTTKY - TO-220 Vishay General Semiconductor - Diodes Division |
2,569 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 1400pF @ 5V, 1MHz | - | 2.7 mA @ 45 V | 45 V | 20A | -55°C ~ 150°C | 570 mV @ 20 A | |
|
|
VS-20TQ035THN3SCHOTTKY - TO-220 Vishay General Semiconductor - Diodes Division |
3,578 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 1400pF @ 5V, 1MHz | - | 2.7 mA @ 35 V | 35 V | 20A | -55°C ~ 150°C | 570 mV @ 20 A | |
|
VS-6TQ040S-M3DIODE SCHOTTKY 40V 6A TO263AB Vishay General Semiconductor - Diodes Division |
2,934 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 5V, 1MHz | - | 800 µA @ 40 V | 40 V | 6A | -55°C ~ 175°C | 600 mV @ 6 A | |
|
VS-15TQ060SHM3SCHOTTKY - D2PAK Vishay General Semiconductor - Diodes Division |
2,569 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 720pF @ 5V, 1MHz | - | 800 µA @ 60 V | 60 V | 15A | -55°C ~ 150°C | 620 mV @ 15 A |
|
|
VS-MBRB735-M3DIODE SCHOTTKY 35V 7.5A TO263AB Vishay General Semiconductor - Diodes Division |
3,388 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 5V, 1MHz | - | 100 µA @ 35 V | 35 V | 7.5A | -65°C ~ 150°C | 570 mV @ 7.5 A | |
|
|
VS-50PF80WDIODE GEN PURP 800V 50A DO203AB Vishay General Semiconductor - Diodes Division |
3,262 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | - | 800 V | 50A | -55°C ~ 180°C | 1.4 V @ 125 A | |
|
ES1BHE3_A/HDIODE GEN PURP 100V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,983 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 25 ns | 5 µA @ 100 V | 100 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A |
|
|
ES1CHE3_A/HDIODE GEN PURP 150V 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,721 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 25 ns | 5 µA @ 150 V | 150 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A |
|
GL41A-E3/97DIODE GEN PURP 50V 1A DO213AB Vishay General Semiconductor - Diodes Division |
2,013 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 50 V | 50 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
BYM10-100-E3/97DIODE GEN PURP 100V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,114 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 100 V | 100 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
BYM10-200-E3/97DIODE GEN PURP 200V 1A DO213AB Vishay General Semiconductor - Diodes Division |
3,534 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 8pF @ 4V, 1MHz | - | 10 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 1.1 V @ 1 A |
|
|
VS-20ETS08S-M3DIODE GEN PURP 800V 20A TO263AB Vishay General Semiconductor - Diodes Division |
2,034 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 100 µA @ 800 V | 800 V | 20A | -40°C ~ 150°C | 1.1 V @ 20 A | |
|
|
VS-20TQ040THN3SCHOTTKY - TO-220 Vishay General Semiconductor - Diodes Division |
3,454 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 1400pF @ 5V, 1MHz | - | 2.7 mA @ 40 V | 40 V | 20A | -55°C ~ 150°C | 570 mV @ 20 A | |
|
|
VS-6TQ035S-M3DIODE SCHOTTKY 35V 6A TO263AB Vishay General Semiconductor - Diodes Division |
3,065 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 400pF @ 5V, 1MHz | - | 800 µA @ 35 V | 35 V | 6A | -55°C ~ 175°C | 600 mV @ 6 A | |
|
|
VS-50PFR80WDIODE GEN PURP 800V 50A DO203AB Vishay General Semiconductor - Diodes Division |
3,152 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | - | 800 V | 50A | -55°C ~ 180°C | 1.4 V @ 125 A | |
|
V20100SG-M3/4WDIODE SCHOTTKY 20A 100V TO-220AB Vishay General Semiconductor - Diodes Division |
3,152 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 350 µA @ 100 V | 100 V | 20A | -40°C ~ 150°C | 1.07 V @ 20 A | |
|
VS-12EWH06FNTRL-M3DIODE GEN PURPOSE 600V 12A DPAK Vishay General Semiconductor - Diodes Division |
2,053 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 10 µA @ 600 V | 600 V | 12A | -40°C ~ 150°C | 2.5 V @ 12 A |
|
|
VI20120S-M3/4WDIODE SCHOTTKY 20A 120V TO-262AA Vishay General Semiconductor - Diodes Division |
3,096 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 300 µA @ 120 V | 120 V | 20A | -40°C ~ 150°C | 1.12 V @ 20 A | |
|
|
VS-12EWH06FNTR-M3DIODE GEN PURPOSE 600V 12A DPAK Vishay General Semiconductor - Diodes Division |
2,606 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 10 µA @ 600 V | 600 V | 12A | -65°C ~ 175°C | 2.5 V @ 12 A |
- 1500+ Média diária de RFQ
- 20,000.000 Unidade padrão do produto
- 1800+ Fabricantes em todo o mundo
- 15,000+ Armazém em estoque
