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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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VS-40HFR140DIODE GEN PURP 1.4KV 40A DO203AB Vishay General Semiconductor - Diodes Division |
3,816 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Chassis, Stud Mount | - | - | 4.5 mA @ 1400 V | 1400 V | 40A | -65°C ~ 160°C | 1.5 V @ 125 A | |
|
VS-12EWH06FNTRR-M3DIODE GEN PURPOSE 600V 12A DPAK Vishay General Semiconductor - Diodes Division |
3,026 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | FRED Pt® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 26 ns | 10 µA @ 600 V | 600 V | 12A | -65°C ~ 175°C | 2.5 V @ 12 A |
|
VS-80PF160WDIODE GEN PURP 1.6KV 80A DO203AB Vishay General Semiconductor - Diodes Division |
3,449 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | - | 1600 V | 80A | -55°C ~ 150°C | 1.46 V @ 220 A | |
|
|
VS-80PF40WDIODE GEN PURP 400V 80A DO203AB Vishay General Semiconductor - Diodes Division |
3,359 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | - | 400 V | 80A | -55°C ~ 180°C | 1.4 V @ 220 A | |
|
VS-10ETS12FP-M3DIODE GEN PURP 1.2KV 10A TO220FP Vishay General Semiconductor - Diodes Division |
3,289 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 50 µA @ 1200 V | 1200 V | 10A | -40°C ~ 150°C | 1.1 V @ 10 A | |
|
VS-HFA16TB120-M3DIODE FRED 1.2KV 16A TO220AC Vishay General Semiconductor - Diodes Division |
3,307 | - |
RFQ |
Ficha técnica |
Tube | HEXFRED® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 135 ns | 20 µA @ 1200 V | 1200 V | 16A (DC) | -55°C ~ 150°C | 3.93 V @ 32 A |
|
VS-20ETS16THM3RECTIFIER DIODE 20A 1600V TO-220 Vishay General Semiconductor - Diodes Division |
2,232 | - |
RFQ |
Ficha técnica |
Tube | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 1600 V | 1600 V | 20A | -40°C ~ 150°C | 1.1 V @ 20 A |
|
VI20150SG-M3/4WDIODE SCHOTTKY 20A 150V TO-262AA Vishay General Semiconductor - Diodes Division |
2,452 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 200 µA @ 150 V | 150 V | 20A | -55°C ~ 150°C | 1.6 V @ 20 A | |
|
|
VS-20ETS08-M3DIODE GEN PURP 800V 20A TO220AC Vishay General Semiconductor - Diodes Division |
3,491 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 800 V | 800 V | 20A | -40°C ~ 150°C | 1.1 V @ 20 A | |
|
|
MBRF10100-M3/4WDIODE SCHOTTKY 100V 10A ITO220AC Vishay General Semiconductor - Diodes Division |
3,547 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 100 V | 100 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A | |
|
|
VS-20ETS12-M3DIODE GEN PURP 1.2KV 20A TO220AC Vishay General Semiconductor - Diodes Division |
2,433 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 100 µA @ 1200 V | 1200 V | 20A | -40°C ~ 150°C | 1 V @ 10 A | |
|
|
VS-80PFR40WDIODE GEN PURP 400V 80A DO203AB Vishay General Semiconductor - Diodes Division |
3,055 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | - | 400 V | 80A | -55°C ~ 180°C | 1.4 V @ 220 A | |
|
|
MBRF1090-M3/4WDIODE SCHOTTKY 90V 10A ITO220AC Vishay General Semiconductor - Diodes Division |
2,618 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 100 µA @ 90 V | 90 V | 10A | -65°C ~ 150°C | 800 mV @ 10 A | |
|
|
VS-8EWS08S-M3DIODE GEN PURP 800V 8A TO252AA Vishay General Semiconductor - Diodes Division |
3,818 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 800 V | 800 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
|
VS-8EWS12S-M3DIODE GEN PURP 1.2KV 8A TO252AA Vishay General Semiconductor - Diodes Division |
2,080 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | - | 50 µA @ 1200 V | 1200 V | 8A | -55°C ~ 150°C | 1.1 V @ 8 A | |
|
|
VI20120SG-M3/4WDIODE SCHOTTKY 20A 120V TO-262AA Vishay General Semiconductor - Diodes Division |
3,225 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 250 µA @ 120 V | 120 V | 20A | -40°C ~ 150°C | 1.33 V @ 20 A | |
|
|
VS-50PF120WDIODE GEN PURP 1.2KV 50A DO203AB Vishay General Semiconductor - Diodes Division |
3,774 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Stud Mount | - | - | - | 1200 V | 50A | -55°C ~ 180°C | 1.4 V @ 125 A | |
|
SE20DBHM3/IDIODE GEN PURP 100V 3.9A TO263AC Vishay General Semiconductor - Diodes Division |
2,231 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 150pF @ 4V, 1MHz | 3 µs | 25 µA @ 100 V | 100 V | 3.9A | -55°C ~ 175°C | 1.2 V @ 20 A |
|
|
VS-50PFR120WDIODE GEN PURP 1.2KV 50A DO203AB Vishay General Semiconductor - Diodes Division |
2,327 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard, Reverse Polarity | Active | Stud Mount | - | - | - | 1200 V | 50A | -55°C ~ 180°C | 1.4 V @ 125 A | |
|
|
SE20DDHM3/IDIODE GEN PURP 200V 3.9A TO263AC Vishay General Semiconductor - Diodes Division |
3,527 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 150pF @ 4V, 1MHz | 3 µs | 25 µA @ 200 V | 200 V | 3.9A | -55°C ~ 175°C | 1.2 V @ 20 A |
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