+86 075582561136
Carregar BOM
Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
SS23S-E3/61TDIODE SCHOTTKY 30V 2A DO214AA Vishay General Semiconductor - Diodes Division |
2,363 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 200 µA @ 30 V | 30 V | 2A | -55°C ~ 150°C | 550 mV @ 2 A | |
|
|
VS-10BQ060-M3/5BTDIODE SCHOTTKY 60V 1A SMB Vishay General Semiconductor - Diodes Division |
2,979 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 5V, 1MHz | - | 100 µA @ 60 V | 60 V | 1A | -55°C ~ 150°C | 490 mV @ 1 A | |
|
US1GHE3_A/IDIODE GEN PURP 400V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,822 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 15pF @ 4V, 1MHz | 50 ns | 10 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1 V @ 1 A |
|
|
US1MHE3_A/IDIODE GEN PURP 1KV 1A DO214AC Vishay General Semiconductor - Diodes Division |
3,559 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A |
|
SL04-E3-18DIODE SCHOTTKY 40V 1.1A DO219AB Vishay General Semiconductor - Diodes Division |
3,330 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 65pF @ 4V, 1MHz | 10 ns | 20 µA @ 40 V | 40 V | 1.1A | 175°C (Max) | 540 mV @ 1.1 A |
|
BYV98-50-TRDIODE AVALANCHE 50V 4A SOD64 Vishay General Semiconductor - Diodes Division |
3,465 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 35 ns | 10 µA @ 50 V | 50 V | 4A | -55°C ~ 175°C | 1.1 V @ 5 A | |
|
VF20100SG-E3/4WDIODE SCHOTTKY 100V 20A ITO220AB Vishay General Semiconductor - Diodes Division |
3,961 | - |
RFQ |
Ficha técnica |
Tube | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 350 µA @ 100 V | 100 V | 20A | -40°C ~ 150°C | 1.07 V @ 20 A |
|
|
BYW172D-TRDIODE AVALANCHE 200V 3A SOD64 Vishay General Semiconductor - Diodes Division |
3,679 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 100 ns | 1 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 1.5 V @ 9 A | |
|
|
BYW76TRDIODE AVALANCHE 600V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,835 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 600 V | 600 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
VS-20ETF04STRL-M3DIODE GEN PURP 400V 20A TO263AB Vishay General Semiconductor - Diodes Division |
3,431 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 160 ns | 100 µA @ 400 V | 400 V | 20A | -40°C ~ 150°C | 1.3 V @ 20 A | |
|
|
SF5402-TAPDIODE GEN PURP 200V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,326 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
|
SF5402-TRDIODE GEN PURP 200V 3A SOD64 Vishay General Semiconductor - Diodes Division |
2,980 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 50 ns | 5 µA @ 200 V | 200 V | 3A | -55°C ~ 175°C | 1.1 V @ 3 A | |
|
VS-10TQ035-M3DIODE SCHOTTKY 35V 10A TO-220AC Vishay General Semiconductor - Diodes Division |
3,358 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 900pF @ 5V, 1MHz | - | 2 mA @ 35 V | 35 V | 10A | -55°C ~ 175°C | 670 mV @ 20 A | |
~~2.jpg)
|
SS2P6-M3/84ADIODE SCHOTTKY 60V 2A DO220AA Vishay General Semiconductor - Diodes Division |
3,971 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 80pF @ 4V, 1MHz | - | 100 µA @ 60 V | 60 V | 2A | -55°C ~ 150°C | 700 mV @ 2 A |
|
|
V2P22LHM3/HSCHOTTKY RECTIFIER 2A 200V SMP Vishay General Semiconductor - Diodes Division |
2,133 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 90pF @ 4V, 1MHz | - | 40 µA @ 200 V | 200 V | 1.6A | -40°C ~ 175°C | 760 mV @ 1 A |
|
|
US1J-E3/61TDIODE GEN PURP 600V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,960 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 10 µA @ 600 V | 600 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
|
US1K-E3/61TDIODE GEN PURP 800V 1A DO214AC Vishay General Semiconductor - Diodes Division |
1,714 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 10 µA @ 800 V | 800 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
V20120SG-M3/4WDIODE SCHOTTKY 20A 120V TO-220AB Vishay General Semiconductor - Diodes Division |
3,610 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 250 µA @ 120 V | 120 V | 20A | -40°C ~ 150°C | 1.33 V @ 20 A | |
|
|
VS-10TQ040-M3DIODE SCHOTTKY 40V 10A TO-220AC Vishay General Semiconductor - Diodes Division |
2,363 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | 900pF @ 5V, 1MHz | - | 2 mA @ 40 V | 40 V | 10A | -55°C ~ 175°C | 670 mV @ 20 A | |
|
|
VB10150S-E3/8WDIODE SCHOTTKY 150V 10A TO263AB Vishay General Semiconductor - Diodes Division |
3,939 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 150 µA @ 150 V | 150 V | 10A | -55°C ~ 150°C | 1.2 V @ 10 A |
- 1500+ Média diária de RFQ
- 20,000.000 Unidade padrão do produto
- 1800+ Fabricantes em todo o mundo
- 15,000+ Armazém em estoque
