Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
1N5627GP-E3/73

1N5627GP-E3/73

DIODE GEN PURP 800V 3A DO201AD

Vishay General Semiconductor - Diodes Division
3,731 -

RFQ

1N5627GP-E3/73

Ficha técnica

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 40pF @ 4V, 1MHz 3 µs 200 µA @ 800 V 800 V 3A -65°C ~ 175°C 1 V @ 3 A
UGF12HT-E3/45

UGF12HT-E3/45

DIODE GEN PURP 500V 12A ITO220AC

Vishay General Semiconductor - Diodes Division
2,912 -

RFQ

UGF12HT-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 50 ns 30 µA @ 500 V 500 V 12A -55°C ~ 150°C 1.75 V @ 12 A
MBRB745HE3/45

MBRB745HE3/45

DIODE SCHOTTKY 45V 7.5A TO263AB

Vishay General Semiconductor - Diodes Division
3,369 -

RFQ

MBRB745HE3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 100 µA @ 45 V 45 V 7.5A -65°C ~ 150°C 840 mV @ 15 A
BAT54WS-HE3-08

BAT54WS-HE3-08

DIODE SCHOTTKY 30V 200MA SOD323

Vishay General Semiconductor - Diodes Division
2,566 -

RFQ

BAT54WS-HE3-08

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 10pF @ 1V, 1MHz 5 ns 2 µA @ 25 V 30 V 200mA (DC) 125°C (Max) 800 mV @ 100 mA
SS13-E3/61T

SS13-E3/61T

DIODE SCHOTTKY 30V 1A DO214AC

Vishay General Semiconductor - Diodes Division
2,545 -

RFQ

SS13-E3/61T

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 200 µA @ 30 V 30 V 1A -65°C ~ 125°C 500 mV @ 1 A
VS-MBR1045-M3

VS-MBR1045-M3

DIODE SCHOTTKY 45V 10A TO220AC

Vishay General Semiconductor - Diodes Division
830 -

RFQ

VS-MBR1045-M3

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole 600pF @ 5V, 1MHz - 100 µA @ 45 V 45 V 10A -65°C ~ 150°C 840 mV @ 20 A
GP10D-M3/54

GP10D-M3/54

DIODE GEN PURP 200V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,863 -

RFQ

GP10D-M3/54

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 3 µs 5 µA @ 200 V 200 V 1A -65°C ~ 175°C 1.1 V @ 1 A
BA158-E3/53

BA158-E3/53

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,003 -

RFQ

BA158-E3/53

Ficha técnica

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 250 ns 5 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.3 V @ 1 A
UGF12HTHE3/45

UGF12HTHE3/45

DIODE GEN PURP 500V 12A ITO220AC

Vishay General Semiconductor - Diodes Division
2,423 -

RFQ

UGF12HTHE3/45

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 50 ns 30 µA @ 500 V 500 V 12A -55°C ~ 150°C 1.75 V @ 12 A
MBRB750-E3/45

MBRB750-E3/45

DIODE SCHOTTKY 50V 7.5A TO263AB

Vishay General Semiconductor - Diodes Division
2,106 -

RFQ

MBRB750-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 500 µA @ 50 V 50 V 7.5A -65°C ~ 150°C 750 mV @ 7.5 A
GP10GE-M3/54

GP10GE-M3/54

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,130 -

RFQ

GP10GE-M3/54

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 3 µs 5 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.1 V @ 1 A
BA159GPE-E3/53

BA159GPE-E3/53

DIODE GEN PURP 800V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,704 -

RFQ

BA159GPE-E3/53

Ficha técnica

Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 500 ns 5 µA @ 800 V 800 V 1A -65°C ~ 175°C 1.3 V @ 1 A
UGF12JT-E3/45

UGF12JT-E3/45

DIODE GEN PURP 600V 12A ITO220AC

Vishay General Semiconductor - Diodes Division
3,131 -

RFQ

UGF12JT-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 50 ns 30 µA @ 600 V 600 V 12A -55°C ~ 150°C 1.75 V @ 12 A
MBRB750HE3/45

MBRB750HE3/45

DIODE SCHOTTKY 50V 7.5A TO263AB

Vishay General Semiconductor - Diodes Division
3,540 -

RFQ

MBRB750HE3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 50 V 50 V 7.5A -65°C ~ 150°C 750 mV @ 7.5 A
VS-8ETH03S-M3

VS-8ETH03S-M3

DIODE ULTRA FAST 300V 8A D2PAK

Vishay General Semiconductor - Diodes Division
657 -

RFQ

VS-8ETH03S-M3

Ficha técnica

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 35 ns 20 µA @ 300 V 300 V 8A -65°C ~ 175°C 1.25 V @ 8 A
VS-80APF12-M3

VS-80APF12-M3

DIODE GEN PURP 1.2KV 80A TO247AC

Vishay General Semiconductor - Diodes Division
2,442 -

RFQ

VS-80APF12-M3

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 480 ns 100 µA @ 1200 V 1200 V 80A -40°C ~ 150°C 1.35 V @ 80 A
VS-15ETH03-1-M3

VS-15ETH03-1-M3

DIODE GEN PURP 300V 15A TO262

Vishay General Semiconductor - Diodes Division
465 -

RFQ

VS-15ETH03-1-M3

Ficha técnica

Tube FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 40 ns 40 µA @ 300 V 300 V 15A -65°C ~ 175°C 1.25 V @ 15 A
BYS10-45-E3/TR3

BYS10-45-E3/TR3

DIODE SCHOTTKY 45V 1.5A DO214AC

Vishay General Semiconductor - Diodes Division
2,495 -

RFQ

BYS10-45-E3/TR3

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 45 V 45 V 1.5A -65°C ~ 150°C 500 mV @ 1 A
GP10GHM3/54

GP10GHM3/54

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,729 -

RFQ

GP10GHM3/54

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 3 µs 5 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.1 V @ 1 A
BA159GPEHE3/53

BA159GPEHE3/53

DIODE GEN PURP 800V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,848 -

RFQ

BA159GPEHE3/53

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz 500 ns 5 µA @ 800 V 800 V 1A -65°C ~ 175°C 1.3 V @ 1 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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