Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
VS-ETH0806-M3

VS-ETH0806-M3

DIODE GEN PURP 600V 8A TO220-2

Vishay General Semiconductor - Diodes Division
829 -

RFQ

VS-ETH0806-M3

Ficha técnica

Bulk FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 21 ns 12 µA @ 600 V 600 V 8A -65°C ~ 175°C 2.65 V @ 8 A
GI1404-E3/45

GI1404-E3/45

DIODE GEN PURP 200V 8A TO220AC

Vishay General Semiconductor - Diodes Division
830 -

RFQ

GI1404-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 5 µA @ 200 V 200 V 8A -65°C ~ 150°C 975 mV @ 8 A
GP10KHM3/54

GP10KHM3/54

DIODE GEN PURP 800V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,877 -

RFQ

GP10KHM3/54

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 7pF @ 4V, 1MHz 3 µs 5 µA @ 800 V 800 V 1A -65°C ~ 175°C 1.1 V @ 1 A
EGP10BEHM3/73

EGP10BEHM3/73

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,789 -

RFQ

EGP10BEHM3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 22pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -65°C ~ 150°C 950 mV @ 1 A
MBRF1050HE3/45

MBRF1050HE3/45

DIODE SCHOTTKY 50V 10A ITO220AC

Vishay General Semiconductor - Diodes Division
3,314 -

RFQ

MBRF1050HE3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 50 V 50 V 10A -65°C ~ 150°C 800 mV @ 10 A
UGF5HT-E3/45

UGF5HT-E3/45

DIODE GEN PURP 500V 5A ITO220AC

Vishay General Semiconductor - Diodes Division
2,082 -

RFQ

UGF5HT-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 50 ns 30 µA @ 500 V 500 V 5A -55°C ~ 150°C 1.75 V @ 5 A
GP10K-M3/54

GP10K-M3/54

DIODE GEN PURP 800V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,721 -

RFQ

GP10K-M3/54

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 7pF @ 4V, 1MHz 3 µs 5 µA @ 800 V 800 V 1A -65°C ~ 175°C 1.1 V @ 1 A
EGP10BE-M3/73

EGP10BE-M3/73

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,227 -

RFQ

EGP10BE-M3/73

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 22pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -65°C ~ 150°C 950 mV @ 1 A
MBRF1060HE3/45

MBRF1060HE3/45

DIODE SCHOTTKY 60V 10A ITO220AC

Vishay General Semiconductor - Diodes Division
3,969 -

RFQ

MBRF1060HE3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 60 V 60 V 10A -65°C ~ 150°C 800 mV @ 10 A
SS3P6HM3/85A

SS3P6HM3/85A

DIODE SCHOTTKY 60V 3A DO220AA

Vishay General Semiconductor - Diodes Division
3,785 -

RFQ

SS3P6HM3/85A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 80pF @ 4V, 1MHz - 100 µA @ 60 V 60 V 3A -55°C ~ 150°C 780 mV @ 3 A
VS-ETL0806FP-M3

VS-ETL0806FP-M3

DIODE GEN PURP 600V 8A TO220-2

Vishay General Semiconductor - Diodes Division
998 -

RFQ

VS-ETL0806FP-M3

Ficha técnica

Bulk FRED Pt® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 180 ns 9 µA @ 600 V 600 V 8A -65°C ~ 175°C 1.07 V @ 8 A
MBR10100-M3/4W

MBR10100-M3/4W

DIODE SCHOTTKY 100V 10A TO220AC

Vishay General Semiconductor - Diodes Division
1,000 -

RFQ

MBR10100-M3/4W

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 100 V 100 V 10A -65°C ~ 150°C 800 mV @ 10 A
LL101C-GS08

LL101C-GS08

DIODE SCHOTTKY 40V 30MA SOD80

Vishay General Semiconductor - Diodes Division
3,364 -

RFQ

LL101C-GS08

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Small Signal =< 200mA (Io), Any Speed Schottky Active Surface Mount 2.2pF @ 0V, 1MHz 1 ns 200 nA @ 30 V 40 V 30mA (DC) 125°C (Max) 390 mV @ 1 mA
V20100S-E3/4W

V20100S-E3/4W

DIODE SCHOTTKY 100V 20A TO220AB

Vishay General Semiconductor - Diodes Division
995 -

RFQ

V20100S-E3/4W

Ficha técnica

Tube TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 500 µA @ 100 V 100 V 20A -40°C ~ 150°C 900 mV @ 20 A
UGF5HTHE3/45

UGF5HTHE3/45

DIODE GEN PURP 500V 5A ITO220AC

Vishay General Semiconductor - Diodes Division
3,922 -

RFQ

UGF5HTHE3/45

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 50 ns 30 µA @ 500 V 500 V 5A -55°C ~ 150°C 1.75 V @ 5 A
GP10MHM3/54

GP10MHM3/54

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,796 -

RFQ

GP10MHM3/54

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 7pF @ 4V, 1MHz 3 µs 5 µA @ 1000 V 1000 V 1A -65°C ~ 175°C 1.1 V @ 1 A
EGP10BHM3/73

EGP10BHM3/73

DIODE GEN PURP 100V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,644 -

RFQ

EGP10BHM3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 22pF @ 4V, 1MHz 50 ns 5 µA @ 100 V 100 V 1A -65°C ~ 150°C 950 mV @ 1 A
MBRF10H100HE3/45

MBRF10H100HE3/45

DIODE SCHOTTKY 100V 10A ITO220AC

Vishay General Semiconductor - Diodes Division
3,830 -

RFQ

MBRF10H100HE3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 4.5 µA @ 100 V 100 V 10A -65°C ~ 175°C 770 mV @ 10 A
UGF5JT-E3/45

UGF5JT-E3/45

DIODE GEN PURP 600V 5A ITO220AC

Vishay General Semiconductor - Diodes Division
3,599 -

RFQ

UGF5JT-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 50 ns 30 µA @ 600 V 600 V 5A -55°C ~ 150°C 1.75 V @ 5 A
GP10M-M3/54

GP10M-M3/54

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,914 -

RFQ

GP10M-M3/54

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 7pF @ 4V, 1MHz 3 µs 5 µA @ 1000 V 1000 V 1A -65°C ~ 175°C 1.1 V @ 1 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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