Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
UGF12JTHE3/45

UGF12JTHE3/45

DIODE GEN PURP 600V 12A ITO220AC

Vishay General Semiconductor - Diodes Division
2,052 -

RFQ

UGF12JTHE3/45

Ficha técnica

Tube Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 50 ns 30 µA @ 600 V 600 V 12A -55°C ~ 150°C 1.75 V @ 12 A
MBRB760HE3/45

MBRB760HE3/45

DIODE SCHOTTKY 60V 7.5A TO263AB

Vishay General Semiconductor - Diodes Division
2,716 -

RFQ

MBRB760HE3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Discontinued at Digi-Key Surface Mount - - 500 µA @ 60 V 60 V 7.5A -65°C ~ 150°C 750 mV @ 7.5 A
GP10G-M3/54

GP10G-M3/54

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,585 -

RFQ

GP10G-M3/54

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 3 µs 5 µA @ 400 V 400 V 1A -65°C ~ 175°C 1.1 V @ 1 A
BAY80-TAP

BAY80-TAP

DIODE GEN PURP 120V 250MA DO35

Vishay General Semiconductor - Diodes Division
2,011 -

RFQ

BAY80-TAP

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 5pF @ 0V, 1MHz 50 ns 100 nA @ 120 V 120 V 250mA (DC) 175°C (Max) 1.07 V @ 150 mA
UGF15HT-E3/45

UGF15HT-E3/45

DIODE GEN PURP 500V 15A ITO220AC

Vishay General Semiconductor - Diodes Division
2,300 -

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 50 ns 30 µA @ 500 V 500 V 15A -55°C ~ 150°C 1.75 V @ 15 A
MBRF1035-E3/45

MBRF1035-E3/45

DIODE SCHOTTKY 35V 10A ITO220AC

Vishay General Semiconductor - Diodes Division
3,469 -

RFQ

MBRF1035-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 35 V 35 V 10A -65°C ~ 150°C 840 mV @ 20 A
GP10JE-M3/54

GP10JE-M3/54

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,736 -

RFQ

GP10JE-M3/54

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 3 µs 5 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.1 V @ 1 A
BY251P-E3/73

BY251P-E3/73

DIODE GEN PURP 200V 3A DO201AD

Vishay General Semiconductor - Diodes Division
3,241 -

RFQ

BY251P-E3/73

Ficha técnica

Tape & Box (TB) RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 40pF @ 4V, 1MHz 3 µs 5 µA @ 200 V 200 V 3A -55°C ~ 150°C 1.1 V @ 3 A
MBRF1035HE3/45

MBRF1035HE3/45

DIODE SCHOTTKY 35V 10A ITO220AC

Vishay General Semiconductor - Diodes Division
2,994 -

RFQ

MBRF1035HE3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 35 V 35 V 10A -65°C ~ 150°C 840 mV @ 20 A
UGF15HTHE3/45

UGF15HTHE3/45

DIODE GEN PURP 500V 15A ITO220AC

Vishay General Semiconductor - Diodes Division
3,257 -

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 50 ns 30 µA @ 500 V 500 V 15A -55°C ~ 150°C 1.75 V @ 15 A
S1MHE3_A/I

S1MHE3_A/I

DIODE GEN PURP 1KV 1A DO214AC

Vishay General Semiconductor - Diodes Division
3,947 -

RFQ

S1MHE3_A/I

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q100 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount 12pF @ 4V, 1MHz 1.8 µs 5 µA @ 1000 V 1000 V 1A -55°C ~ 150°C 1.1 V @ 1 A
GP10JHM3/54

GP10JHM3/54

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,931 -

RFQ

GP10JHM3/54

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 3 µs 5 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.1 V @ 1 A
EGP10AHM3/73

EGP10AHM3/73

DIODE GEN PURP 50V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,033 -

RFQ

EGP10AHM3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 22pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -65°C ~ 150°C 950 mV @ 1 A
MBRF1045HE3/45

MBRF1045HE3/45

DIODE SCHOTTKY 45V 10A ITO220AC

Vishay General Semiconductor - Diodes Division
2,373 -

RFQ

MBRF1045HE3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Through Hole - - 100 µA @ 45 V 45 V 10A -65°C ~ 150°C 840 mV @ 20 A
UGF15JT-E3/45

UGF15JT-E3/45

DIODE GEN PURP 600V 15A ITO220AC

Vishay General Semiconductor - Diodes Division
2,713 -

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 50 ns 30 µA @ 600 V 600 V 15A -55°C ~ 150°C 1.75 V @ 15 A
GP10J-M3/54

GP10J-M3/54

DIODE GEN PURP 600V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,184 -

RFQ

GP10J-M3/54

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Obsolete Through Hole 8pF @ 4V, 1MHz 3 µs 5 µA @ 600 V 600 V 1A -65°C ~ 175°C 1.1 V @ 1 A
EGP10A-M3/73

EGP10A-M3/73

DIODE GEN PURP 50V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,127 -

RFQ

EGP10A-M3/73

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 22pF @ 4V, 1MHz 50 ns 5 µA @ 50 V 50 V 1A -65°C ~ 150°C 950 mV @ 1 A
MBRF1050-E3/45

MBRF1050-E3/45

DIODE SCHOTTKY 50V 10A ITO220AC

Vishay General Semiconductor - Diodes Division
3,083 -

RFQ

MBRF1050-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 50 V 50 V 10A -65°C ~ 150°C 800 mV @ 10 A
UG8DT-E3/45

UG8DT-E3/45

DIODE GEN PURP 200V 8A TO220AC

Vishay General Semiconductor - Diodes Division
3,676 -

RFQ

UG8DT-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 30 ns 10 µA @ 200 V 200 V 8A -55°C ~ 150°C 1 V @ 8 A
UGF15JTHE3/45

UGF15JTHE3/45

DIODE GEN PURP 600V 15A ITO220AC

Vishay General Semiconductor - Diodes Division
2,928 -

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole - 50 ns 30 µA @ 600 V 600 V 15A -55°C ~ 150°C 1.75 V @ 15 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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