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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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MBRF760HE3/45DIODE SCHOTTKY 60V 7.5A ITO220AC Vishay General Semiconductor - Diodes Division |
2,662 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 60 V | 60 V | 7.5A | -65°C ~ 150°C | 750 mV @ 7.5 A | |
|
BYS10-45HE3_A/HDIODE SCHOTTKY 45V 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,388 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q100 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 45 V | 45 V | 1.5A | -65°C ~ 150°C | 500 mV @ 1 A |
|
SB040-E3/100DIODE SCHOTTKY .6A 40V AXIAL Vishay General Semiconductor - Diodes Division |
3,621 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 40 V | 40 V | 600mA | -65°C ~ 125°C | 550 mV @ 600 mA | |
|
FGP10D-M3/73DIODE GEN PURP 200V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,552 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 25pF @ 4V, 1MHz | 35 ns | 2 µA @ 200 V | 200 V | 1A | -65°C ~ 175°C | 950 mV @ 1 A | |
|
|
MBRF7H35-E3/45DIODE SCHOTTKY 35V 7.5A ITO220AC Vishay General Semiconductor - Diodes Division |
2,897 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 50 µA @ 35 V | 35 V | 7.5A | -65°C ~ 150°C | 630 mV @ 7.5 A | |
|
ESH2D-E3/5BTDIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
347 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 2 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 930 mV @ 2 A | |
|
|
ES1AHE3_A/HDIODE GEN PURP 50V 1A DO214AC Vishay General Semiconductor - Diodes Division |
405 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 25 ns | 5 µA @ 50 V | 50 V | 1A | -55°C ~ 150°C | 920 mV @ 1 A |
|
|
US1M-M3/61TDIODE GEN PURP 1KV 1A DO214AC Vishay General Semiconductor - Diodes Division |
2,262 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 75 ns | 10 µA @ 1000 V | 1000 V | 1A | -55°C ~ 150°C | 1.7 V @ 1 A | |
|
LS4148-GS18DIODE GEN PURP 75V 150MA SOD80 Vishay General Semiconductor - Diodes Division |
2,057 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Small Signal =< 200mA (Io), Any Speed | Standard | Active | Surface Mount | 4pF @ 0V, 1MHz | 8 ns | 5 µA @ 75 V | 75 V | 150mA | 175°C (Max) | 1 V @ 50 mA |
|
SD103AWS-HE3-08DIODE SCHOTTKY 350MA 40V SOD323 Vishay General Semiconductor - Diodes Division |
3,778 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101 | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 50pF @ 0V, 1MHz | 10 ns | 5 µA @ 30 V | 40 V | 350mA (DC) | -55°C ~ 150°C | 600 mV @ 200 mA |
|
|
SB040-E3/53DIODE SCHOTTKY .6A 40V AXIAL Vishay General Semiconductor - Diodes Division |
2,545 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 500 µA @ 40 V | 40 V | 600mA | -65°C ~ 125°C | 550 mV @ 600 mA | |
|
SB340-E3/54DIODE SCHOTTKY 40V 3A DO201AD Vishay General Semiconductor - Diodes Division |
133 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Through Hole | - | - | 500 µA @ 40 V | 40 V | 3A | -65°C ~ 125°C | 490 mV @ 3 A | |
|
|
GP02-20-E3/53DIODE GEN PURP 2KV 250MA DO204 Vishay General Semiconductor - Diodes Division |
2,382 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | 3pF @ 4V, 1MHz | 2 µs | 5 µA @ 2000 V | 2000 V | 250mA | -65°C ~ 175°C | 3 V @ 1 A | |
|
|
MBRF7H35HE3/45DIODE SCHOTTKY 35V 7.5A ITO220AC Vishay General Semiconductor - Diodes Division |
2,274 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 50 µA @ 35 V | 35 V | 7.5A | -65°C ~ 150°C | 630 mV @ 7.5 A | |
|
|
SBYV26CHM3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,283 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 45pF @ 4V, 1MHz | 30 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 2.5 V @ 1 A |
|
|
GP02-20HE3/53DIODE GEN PURP 2KV 250MA DO204 Vishay General Semiconductor - Diodes Division |
3,899 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 3pF @ 4V, 1MHz | 2 µs | 5 µA @ 2000 V | 2000 V | 250mA | -65°C ~ 175°C | 3 V @ 1 A |
|
|
MBRF7H45-E3/45DIODE SCHOTTKY 45V 7.5A ITO220AC Vishay General Semiconductor - Diodes Division |
3,646 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 50 µA @ 45 V | 45 V | 7.5A | -65°C ~ 150°C | 630 mV @ 7.5 A | |
|
|
SBYV26C-M3/73DIODE GEN PURP 600V 1A DO204AL Vishay General Semiconductor - Diodes Division |
3,987 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | SUPERECTIFIER® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 45pF @ 4V, 1MHz | 30 ns | 5 µA @ 600 V | 600 V | 1A | -65°C ~ 175°C | 2.5 V @ 1 A |
|
|
GP02-20HM3/73DIODE GEN PURP 2KV 250MA DO204 Vishay General Semiconductor - Diodes Division |
2,837 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | Automotive, AEC-Q101 | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 3pF @ 4V, 1MHz | 2 µs | 5 µA @ 2000 V | 2000 V | 250mA | -65°C ~ 175°C | 3 V @ 1 A |
|
|
MBRF7H45HE3/45DIODE SCHOTTKY 45V 7.5A ITO220AC Vishay General Semiconductor - Diodes Division |
2,223 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 50 µA @ 45 V | 45 V | 7.5A | -65°C ~ 150°C | 630 mV @ 7.5 A |
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