Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
RGP10ME-E3/91

RGP10ME-E3/91

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,587 -

RFQ

RGP10ME-E3/91

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 1000 V 1000 V 1A -65°C ~ 175°C 1.3 V @ 1 A
MBRB10H45HE3/81

MBRB10H45HE3/81

DIODE SCHOTTKY 45V 10A TO263AB

Vishay General Semiconductor - Diodes Division
3,550 -

RFQ

MBRB10H45HE3/81

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Surface Mount - - 100 µA @ 45 V 45 V 10A -65°C ~ 175°C 850 mV @ 20 A
EGP10F-M3/73

EGP10F-M3/73

DIODE GEN PURP 300V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,993 -

RFQ

EGP10F-M3/73

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 300 V 300 V 1A -65°C ~ 150°C 1.25 V @ 1 A
MBRF16H60HE3/45

MBRF16H60HE3/45

DIODE SCHOTTKY 60V 16A ITO220AC

Vishay General Semiconductor - Diodes Division
3,312 -

RFQ

MBRF16H60HE3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 60 V 60 V 16A -65°C ~ 150°C 730 mV @ 16 A
VS-10MQ100HM3/5AT

VS-10MQ100HM3/5AT

DIODE SCHOTTKY 100V 1A DO214AC

Vishay General Semiconductor - Diodes Division
2,793 -

RFQ

VS-10MQ100HM3/5AT

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 38pF @ 10V, 1MHz - 100 µA @ 100 V 100 V 1A -55°C ~ 150°C 780 mV @ 1 A
RGP10MEHE3/91

RGP10MEHE3/91

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,139 -

RFQ

RGP10MEHE3/91

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101, Superectifier® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 1000 V 1000 V 1A -65°C ~ 175°C 1.3 V @ 1 A
AS3BJHM3/52T

AS3BJHM3/52T

DIODE AVALANCHE 600V 3A DO214AA

Vishay General Semiconductor - Diodes Division
2,762 -

RFQ

AS3BJHM3/52T

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Discontinued at Digi-Key Surface Mount 40pF @ 4V, 1MHz 1.5 µs 20 µA @ 600 V 600 V 3A -55°C ~ 175°C 1.05 V @ 3 A
EGP10G-E3/53

EGP10G-E3/53

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,391 -

RFQ

EGP10G-E3/53

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -65°C ~ 150°C 1.25 V @ 1 A
MBRF735-E3/45

MBRF735-E3/45

DIODE SCHOTTKY 35V 7.5A ITO220AC

Vishay General Semiconductor - Diodes Division
3,672 -

RFQ

MBRF735-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 35 V 35 V 7.5A -65°C ~ 150°C 840 mV @ 15 A
RGP10ME-M3/73

RGP10ME-M3/73

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,041 -

RFQ

RGP10ME-M3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 1000 V 1000 V 1A -65°C ~ 175°C 1.3 V @ 1 A
BA604-GS08

BA604-GS08

DIODE GP 50V 200MA SOD80

Vishay General Semiconductor - Diodes Division
2,441 -

RFQ

BA604-GS08

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Surface Mount 4pF @ 0V, 1MHz 20 ns 50 nA @ 20 V 50 V 200mA (DC) -65°C ~ 175°C 1.1 V @ 50 mA
EGP10GEHM3/73

EGP10GEHM3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,084 -

RFQ

EGP10GEHM3/73

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -65°C ~ 150°C 1.25 V @ 1 A
MBRF735HE3/45

MBRF735HE3/45

DIODE SCHOTTKY 35V 7.5A ITO220AC

Vishay General Semiconductor - Diodes Division
2,097 -

RFQ

MBRF735HE3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 35 V 35 V 7.5A -65°C ~ 150°C 840 mV @ 15 A
RGP10MHE3/53

RGP10MHE3/53

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,696 -

RFQ

RGP10MHE3/53

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101, Superectifier® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 1000 V 1000 V 1A -65°C ~ 175°C 1.3 V @ 1 A
ES2DHE3J/52T

ES2DHE3J/52T

DIODE GEN PURP 200V 2A DO214AC

Vishay General Semiconductor - Diodes Division
2,842 -

RFQ

ES2DHE3J/52T

Ficha técnica

Tape & Reel (TR) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Discontinued at Digi-Key Surface Mount 18pF @ 4V, 1MHz 30 ns 10 µA @ 200 V 200 V 2A -55°C ~ 150°C 900 mV @ 2 A
EGP10GE-M3/73

EGP10GE-M3/73

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,120 -

RFQ

EGP10GE-M3/73

Ficha técnica

Tape & Box (TB) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -65°C ~ 150°C 1.25 V @ 1 A
MBRF745HE3/45

MBRF745HE3/45

DIODE SCHOTTKY 45V 7.5A ITO220AC

Vishay General Semiconductor - Diodes Division
3,076 -

RFQ

MBRF745HE3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Obsolete Through Hole - - 100 µA @ 45 V 45 V 7.5A -65°C ~ 150°C 840 mV @ 15 A
RGP10MHM3/73

RGP10MHM3/73

DIODE GEN PURP 1KV 1A DO204AL

Vishay General Semiconductor - Diodes Division
2,296 -

RFQ

RGP10MHM3/73

Ficha técnica

Tape & Box (TB) Automotive, AEC-Q101, Superectifier® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz 150 ns 5 µA @ 1000 V 1000 V 1A -65°C ~ 175°C 1.3 V @ 1 A
BYWE29-100-E3/45

BYWE29-100-E3/45

DIODE GEN PURP 100V 8A TO220AC

Vishay General Semiconductor - Diodes Division
2,866 -

RFQ

BYWE29-100-E3/45

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 45pF @ 4V, 1MHz 25 ns 10 µA @ 100 V 100 V 8A -65°C ~ 150°C 1.3 V @ 20 A
EGP10GHE3/53

EGP10GHE3/53

DIODE GEN PURP 400V 1A DO204AL

Vishay General Semiconductor - Diodes Division
3,442 -

RFQ

EGP10GHE3/53

Ficha técnica

Tape & Box (TB) SUPERECTIFIER® RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Obsolete Through Hole 15pF @ 4V, 1MHz 50 ns 5 µA @ 400 V 400 V 1A -65°C ~ 150°C 1.25 V @ 1 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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