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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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RGP02-12E-M3/54DIODE GP 1.2KV 500MA DO204AL Vishay General Semiconductor - Diodes Division |
2,824 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 5pF @ 4V, 1MHz | 300 ns | 5 µA @ 1200 V | 1200 V | 500mA | -65°C ~ 175°C | 1.8 V @ 100 mA | ||
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MBRF7H50-E3/45DIODE SCHOTTKY 50V 7.5A ITO220AC Vishay General Semiconductor - Diodes Division |
2,180 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 50 µA @ 50 V | 50 V | 7.5A | -65°C ~ 150°C | 730 mV @ 7.5 A | |
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RGP02-14E-M3/54DIODE GP 1.4KV 500MA DO204AL Vishay General Semiconductor - Diodes Division |
2,500 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 5pF @ 4V, 1MHz | 300 ns | 5 µA @ 1400 V | 1400 V | 500mA | -65°C ~ 175°C | 1.8 V @ 100 mA | ||
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MBRF7H50HE3/45DIODE SCHOTTKY 50V 7.5A ITO220AC Vishay General Semiconductor - Diodes Division |
2,548 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 50 µA @ 50 V | 50 V | 7.5A | -65°C ~ 150°C | 730 mV @ 7.5 A | |
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RGP02-15E-M3/54DIODE GP 1.5KV 500MA DO204AL Vishay General Semiconductor - Diodes Division |
3,598 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | 300 ns | 5 µA @ 1500 V | 1500 V | 500mA | -65°C ~ 175°C | 1.8 V @ 100 mA | ||
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MBRF7H60-E3/45DIODE SCHOTTKY 60V 7.5A ITO220AC Vishay General Semiconductor - Diodes Division |
2,834 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 50 µA @ 60 V | 60 V | 7.5A | -65°C ~ 150°C | 730 mV @ 7.5 A | |
|
|
RGP02-16E-M3/54DIODE GP 1.6KV 500MA DO204AL Vishay General Semiconductor - Diodes Division |
3,609 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 5pF @ 4V, 1MHz | 300 ns | 5 µA @ 1600 V | 1600 V | 500mA | -65°C ~ 175°C | 1.8 V @ 100 mA | ||
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MBRF7H60HE3/45DIODE SCHOTTKY 60V 7.5A ITO220AC Vishay General Semiconductor - Diodes Division |
2,805 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 50 µA @ 60 V | 60 V | 7.5A | -65°C ~ 150°C | 730 mV @ 7.5 A | |
|
ESH2D-E3/52TDIODE GEN PURP 200V 2A DO214AA Vishay General Semiconductor - Diodes Division |
205 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 35 ns | 2 µA @ 200 V | 200 V | 2A | -55°C ~ 175°C | 930 mV @ 2 A | |
|
SE20AFD-M3/6ADIODE GEN PURP 200V 2A DO221AC Vishay General Semiconductor - Diodes Division |
353 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 12pF @ 4V, 1MHz | 1.2 µs | 5 µA @ 200 V | 200 V | 2A (DC) | -55°C ~ 175°C | 1.1 V @ 2 A | |
|
GPP20J-E3/73DIODE GEN PURP 600V 2A DO204AC Vishay General Semiconductor - Diodes Division |
185 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 5 µA @ 600 V | 600 V | 2A | -55°C ~ 150°C | 1.1 V @ 2 A | |
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S1PD-M3/84ADIODE GEN PURP 200V 1A DO220AA Vishay General Semiconductor - Diodes Division |
314 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Surface Mount | 6pF @ 4V, 1MHz | 1.8 µs | 1 µA @ 200 V | 200 V | 1A | -55°C ~ 150°C | 1.1 V @ 1 A |
|
1N4150TRDIODE GEN PURP 50V 300MA DO35 Vishay General Semiconductor - Diodes Division |
2,877 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 2.5pF @ 0V, 1MHz | 4 ns | 100 nA @ 50 V | 50 V | 300mA (DC) | 175°C (Max) | 1 V @ 200 mA | |
|
BY251GP-E3/73DIODE GEN PURP 200V 3A DO201AD Vishay General Semiconductor - Diodes Division |
313 | - |
RFQ |
Ficha técnica |
Cut Tape (CT),Tape & Box (TB) | SUPERECTIFIER® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 40pF @ 4V, 1MHz | 3 µs | 5 µA @ 200 V | 200 V | 3A | -65°C ~ 175°C | 1.1 V @ 3 A |
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BAV21-TRDIODE GEN PURP 200V 250MA DO35 Vishay General Semiconductor - Diodes Division |
3,880 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | 1.5pF @ 0V, 1MHz | 50 ns | 100 nA @ 200 V | 200 V | 250mA (DC) | 175°C (Max) | 1 V @ 100 mA | |
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RS1G-E3/5ATDIODE GEN PURP 400V 1A DO214AC Vishay General Semiconductor - Diodes Division |
151 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 10pF @ 4V, 1MHz | 150 ns | 5 µA @ 400 V | 400 V | 1A | -55°C ~ 150°C | 1.3 V @ 1 A | |
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V2PM6LHM3/HSCHOTTKY RECTIFIER 2A 60V SMP Vishay General Semiconductor - Diodes Division |
970 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR),Cut Tape (CT) | Automotive, AEC-Q101, eSMP®, TMBS® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | 250pF @ 4V, 1MHz | - | 200 µA @ 60 V | 60 V | 2A (DC) | -40°C ~ 175°C | 630 mV @ 2 A |
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RGP02-17E-M3/54DIODE GP 1.7KV 500MA DO204AL Vishay General Semiconductor - Diodes Division |
2,684 | - |
RFQ |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | 5pF @ 4V, 1MHz | 300 ns | 5 µA @ 1700 V | 1700 V | 500mA | -65°C ~ 175°C | 1.8 V @ 100 mA | ||
|
VS-60EPS16PBFDIODE GEN PURP 1.6KV 60A TO247AC Vishay General Semiconductor - Diodes Division |
2,575 | - |
RFQ |
Tube | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Obsolete | Through Hole | - | - | 100 µA @ 1600 V | 1600 V | 60A | -40°C ~ 150°C | 1 V @ 30 A | ||
|
MI3035S-E3/4WDIODE SCHOTTKY 35V 30A TO220AB Vishay General Semiconductor - Diodes Division |
2,822 | - |
RFQ |
Ficha técnica |
Tube | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Through Hole | - | - | 200 µA @ 35 V | 35 V | 30A | -65°C ~ 150°C | 700 mV @ 30 A |
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