Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
1N6622/TR

1N6622/TR

RECTIFIER UFR,FRR

Microchip Technology
2,989 -

RFQ

1N6622/TR

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 45 ns 500 nA @ 600 V 600 V 1.2A -65°C ~ 150°C 1.4 V @ 1.2 A
129SPC135A

129SPC135A

DIODE SCHOTTKY 135V 120A SPD-3A

SMC Diode Solutions
3,028 -

RFQ

129SPC135A

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 3000pF @ 5V, 1MHz - 3 mA @ 135 V 135 V 120A -55°C ~ 175°C 870 mV @ 120 A
1N6539/TR

1N6539/TR

RECTIFIER UFR,FRR

Microchip Technology
2,174 -

RFQ

Tape & Reel (TR) RoHS - - Active - - - - - - - -
VS-20ETF04STRR-M3

VS-20ETF04STRR-M3

DIODE GEN PURP 400V 20A TO263AB

Vishay General Semiconductor - Diodes Division
3,783 -

RFQ

VS-20ETF04STRR-M3

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 160 ns 100 µA @ 400 V 400 V 20A -40°C ~ 150°C 1.3 V @ 20 A
1N5297UR-1/TR

1N5297UR-1/TR

CURRENT REGULATOR

Microchip Technology
2,396 -

RFQ

1N5297UR-1/TR

Ficha técnica

Tape & Reel (TR) RoHS - - Active Surface Mount - - - - - - -
DHG10I600PM

DHG10I600PM

DIODE GEN PURP 600V 10A TO220FP

IXYS
3,179 -

RFQ

DHG10I600PM

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 35 ns 15 µA @ 600 V 600 V 10A -55°C ~ 150°C 2.35 V @ 10 A
PMEG100T080ELPEZ

PMEG100T080ELPEZ

DIODE SCHOTTKY 100V 8A CFP15B

Nexperia USA Inc.
2,357 -

RFQ

PMEG100T080ELPEZ

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 680pF @ 1V, 1MHz 19 ns 4 µA @ 100 V 100 V 8A 175°C 810 mV @ 8 A
IDK06G65C5XTMA2

IDK06G65C5XTMA2

DIODE SCHOTTKY 650V 6A TO263-2

Infineon Technologies
3,484 -

RFQ

IDK06G65C5XTMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 190pF @ 1V, 1MHz 0 ns 1.1 mA @ 650 V 650 V 6A (DC) -55°C ~ 175°C 1.8 V @ 6 A
SS24HE3_A/H

SS24HE3_A/H

DIODE SCHOTTKY 40V 2A DO214AA

Vishay General Semiconductor - Diodes Division
2,346 -

RFQ

SS24HE3_A/H

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101 RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 400 µA @ 40 V 40 V 2A -65°C ~ 150°C 500 mV @ 2 A
IDH06S60C

IDH06S60C

RECTIFIER DIODE, SCHOTTKY

Rochester Electronics, LLC
3,281 -

RFQ

IDH06S60C

Ficha técnica

Bulk CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 280pF @ 1V, 1MHz 0 ns 80 µA @ 600 V 600 V 6A (DC) -55°C ~ 175°C 1.7 V @ 6 A
SS8P3L-M3/86A

SS8P3L-M3/86A

DIODE SCHOTTKY 30V 8A TO277A

Vishay General Semiconductor - Diodes Division
3,367 -

RFQ

SS8P3L-M3/86A

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) eSMP® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 330pF @ 4V, 1MHz - 200 µA @ 30 V 30 V 8A -55°C ~ 150°C 570 mV @ 8 A
RURD15100

RURD15100

RECTIFIER, 15A, 100V V(RRM)

Rochester Electronics, LLC
2,992 -

RFQ

Bulk RoHS - - Active - - - - - - - -
BYW56-TR

BYW56-TR

DIODE AVALANCHE 1000V 2A SOD57

Vishay General Semiconductor - Diodes Division
2,859 -

RFQ

BYW56-TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole - 4 µs 1 µA @ 1000 V 1000 V 2A -55°C ~ 175°C 1 V @ 1 A
RURD1580

RURD1580

RECTIFIER DIODE

Rochester Electronics, LLC
3,321 -

RFQ

Bulk RoHS - - Active - - - - - - - -
BYV38-TR

BYV38-TR

DIODE AVALANCHE 1KV 2A SOD57

Vishay General Semiconductor - Diodes Division
2,025 -

RFQ

BYV38-TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Avalanche Active Through Hole 15pF @ 4V, 1MHz 300 ns 5 µA @ 1000 V 1000 V 2A -55°C ~ 175°C 1.1 V @ 1 A
DPF30I300PA

DPF30I300PA

DIODE GEN PURP 300V 30A TO220AC

IXYS
3,240 -

RFQ

DPF30I300PA

Ficha técnica

Tube HiPerFRED²™ RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 42pF @ 150V, 1MHz 55 ns 5 µA @ 300 V 300 V 30A -55°C ~ 175°C 1.17 V @ 30 A
BYW56-TAP

BYW56-TAP

DIODE AVALANCHE 1KV 2A SOD57

Vishay General Semiconductor - Diodes Division
2,162 -

RFQ

BYW56-TAP

Ficha técnica

Cut Tape (CT),Tape & Box (TB) RoHS Standard Recovery >500ns, > 200mA (Io) Avalanche Active Through Hole - 4 µs 1 µA @ 1000 V 1000 V 2A -55°C ~ 175°C 1 V @ 1 A
1N3595JTXV

1N3595JTXV

RECTIFIER DIODE

Rochester Electronics, LLC
2,737 -

RFQ

Bulk RoHS - - Active - - - - - - - -
BY268TR

BY268TR

DIODE GEN PURP 1.4KV 800MA SOD57

Vishay General Semiconductor - Diodes Division
3,198 -

RFQ

BY268TR

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 400 ns 2 µA @ 1400 V 1400 V 800mA -55°C ~ 150°C 1.25 V @ 400 mA
IDD05SG60CXTMA2

IDD05SG60CXTMA2

DIODE SCHOTTKY 600V 5A TO252-3

Infineon Technologies
3,781 -

RFQ

IDD05SG60CXTMA2

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) CoolSiC™+ RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Surface Mount 110pF @ 1V, 1MHz 0 ns 30 µA @ 600 V 600 V 5A (DC) -55°C ~ 175°C 2.3 V @ 5 A
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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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Fudong Communication (Shenzhen) Grupo Co., Ltd.

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