Diodos-Retificadores-Único

Foto: Número da peça do fabricante Disponibilidade Preço Quantidade Ficha técnica Packaging Series RoHS Speed Diode Type Part Status Mounting Type Capacitance @ Vr, F Reverse Recovery Time (trr) Current - Reverse Leakage @ Vr Voltage - DC Reverse (Vr) (Max) Current - Average Rectified (Io) Operating Temperature Voltage - Forward (Vf) (Max) @ If
V8PM15HM3/H

V8PM15HM3/H

DIODE SCHOTTKY 8A 150V SMPC

Vishay General Semiconductor - Diodes Division
3,309 -

RFQ

V8PM15HM3/H

Ficha técnica

Tape & Reel (TR),Cut Tape (CT) Automotive, AEC-Q101, eSMP®, TMBS® RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 460pF @ 4V, 1MHz - 150 µA @ 150 V 150 V 8A -40°C ~ 175°C 1.08 V @ 8 A
VS-20ETF12FP-M3

VS-20ETF12FP-M3

DIODE GEN PURP 1.2KV 20A TO220FP

Vishay General Semiconductor - Diodes Division
2,632 -

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 400 ns 100 µA @ 1200 V 1200 V 20A -40°C ~ 150°C 1.31 V @ 20 A
JAN1N6623US/TR

JAN1N6623US/TR

RECTIFIER UFR,FRR

Microchip Technology
3,969 -

RFQ

Tape & Reel (TR) Military, MIL-PRF-19500/585 RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount 10pF @ 10V, 1MHz 50 ns 500 nA @ 880 V 880 V 1A -65°C ~ 150°C 1.55 V @ 1 A
129SPC150A

129SPC150A

DIODE SCHOTTKY 150V 120A SPD-3A

SMC Diode Solutions
3,951 -

RFQ

129SPC150A

Ficha técnica

Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount 3000pF @ 5V, 1MHz - 3 mA @ 150 V 150 V 120A -55°C ~ 175°C 870 mV @ 120 A
1N4245

1N4245

DIODE GEN PURP 200V 1A AXIAL

Semtech Corporation
3,848 -

RFQ

1N4245

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 1 µA @ 200 V 200 V 1A (DC) - 1.2 V @ 1 A
VS-20ETF02STRL-M3

VS-20ETF02STRL-M3

DIODE GEN PURP 200V 20A TO263AB

Vishay General Semiconductor - Diodes Division
3,387 -

RFQ

VS-20ETF02STRL-M3

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 160 ns 100 µA @ 200 V 200 V 20A -40°C ~ 150°C 1.3 V @ 20 A
1N5314UR-1/TR

1N5314UR-1/TR

CURRENT REGULATOR

Microchip Technology
3,392 -

RFQ

1N5314UR-1/TR

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - - 100 V 5.17A -65°C ~ 175°C 2.9 V @ 3.384 A
VS-20ETF10FP-M3

VS-20ETF10FP-M3

DIODE GEN PURP 1KV 20A TO220FP

Vishay General Semiconductor - Diodes Division
2,797 -

RFQ

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 95 ns 100 µA @ 1000 V 1000 V 20A -40°C ~ 150°C 1.31 V @ 20 A
1N6621/TR

1N6621/TR

RECTIFIER UFR,FRR

Microchip Technology
3,811 -

RFQ

1N6621/TR

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 10V, 1MHz 30 ns 500 nA @ 440 V 440 V 1.2A -65°C ~ 150°C 1.4 V @ 1.2 A
1N6623

1N6623

DIODE GEN PURP 880V 1A AXIAL

WEC
203 -

RFQ

1N6623

Ficha técnica

Bulk,Bulk RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole 10pF @ 10V, 1MHz 50 ns 500 nA @ 880 V 880 V 1A -65°C ~ 150°C 1.55 V @ 1 A
1N4246

1N4246

DIODE GEN PURP 400V 1A AXIAL

Semtech Corporation
2,662 -

RFQ

1N4246

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 1 µA @ 400 V 400 V 1A (DC) - 1.2 V @ 1 A
VS-20ETF06STRR-M3

VS-20ETF06STRR-M3

DIODE GEN PURP 600V 20A TO263AB

Vishay General Semiconductor - Diodes Division
3,877 -

RFQ

VS-20ETF06STRR-M3

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Surface Mount - 160 ns 100 µA @ 600 V 600 V 20A -40°C ~ 150°C 1.3 V @ 20 A
1N5303UR-1/TR

1N5303UR-1/TR

CURRENT REGULATOR

Microchip Technology
3,401 -

RFQ

1N5303UR-1/TR

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - - 100 V 1.76A -65°C ~ 175°C 1.65 V @ 1.152 A
KCF16A40

KCF16A40

DIODE FAST RECOVERY 400V 16A TO-

KYOCERA AVX
3,372 -

RFQ

KCF16A40

Ficha técnica

Tube RoHS Fast Recovery =< 500ns, > 200mA (Io) Standard Active Through Hole - 45 ns 30 µA @ 400 V 400 V 16A -40°C ~ 150°C 1.25 V @ 8 A
FFSH4065A

FFSH4065A

650V 40A SIC SBD

onsemi
419 -

RFQ

FFSH4065A

Ficha técnica

Tube,Tube RoHS No Recovery Time > 500mA (Io) Silicon Carbide Schottky Active Through Hole 1989pF @ 1V, 100kHz 0 ns 200 µA @ 650 V 650 V 48A (DC) -55°C ~ 175°C -
VS-87HF40

VS-87HF40

DIODE GEN PURP 400V 85A DO203AB

Vishay General Semiconductor - Diodes Division
2,657 -

RFQ

VS-87HF40

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Chassis, Stud Mount - - - 400 V 85A -65°C ~ 180°C 1.2 V @ 267 A
1N4247

1N4247

DIODE GEN PURP 600V 1A AXIAL

Semtech Corporation
3,171 -

RFQ

1N4247

Ficha técnica

Bulk RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Through Hole - 2 µs 1 µA @ 600 V 600 V 1A (DC) - 1.2 V @ 1 A
JANTX1N914

JANTX1N914

DIODE GEN PURP 75V 200MA DO35

Microchip Technology
3,883 -

RFQ

JANTX1N914

Ficha técnica

Bulk Military, MIL-PRF-19500/116 RoHS Small Signal =< 200mA (Io), Any Speed Standard Active Through Hole 4pF @ 0V, 1MHz 5 ns 500 nA @ 75 V 75 V 200mA -65°C ~ 175°C 1.2 V @ 50 mA
1N5284UR-1/TR

1N5284UR-1/TR

CURRENT REGULATOR

Microchip Technology
3,904 -

RFQ

1N5284UR-1/TR

Ficha técnica

Tape & Reel (TR) RoHS Standard Recovery >500ns, > 200mA (Io) Standard Active Surface Mount - - - 100 V 264mA -65°C ~ 175°C 1 V @ 172.8 mA
HSM8100J/TR13

HSM8100J/TR13

DIODE SCHOTTKY 100V 8A DO214AB

Microchip Technology
3,869 -

RFQ

HSM8100J/TR13

Ficha técnica

Tape & Reel (TR) RoHS Fast Recovery =< 500ns, > 200mA (Io) Schottky Active Surface Mount - - 500 µA @ 100 V 100 V 8A -55°C ~ 175°C 780 mV @ 8 A
Total 50121 Record«Prev1... 191192193194195196197198...2507Next»
1500+
1500+ Média diária de RFQ
20,000.000
20,000.000 Unidade padrão do produto
1800+
1800+ Fabricantes em todo o mundo
15,000+
15,000+ Armazém em estoque
Fudong Communication (Shenzhen) Grupo Co., Ltd.

Início

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Produto

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Telefone

Fudong Communication (Shenzhen) Grupo Co., Ltd.

Usuário