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Diodos-Retificadores-Único

Número da peça do fabricante	Disponibilidade	Preço	Quantidade	Ficha técnica	Packaging	Series	RoHS	Speed	Diode Type	Part Status	Mounting Type	Capacitance @ Vr, F	Reverse Recovery Time (trr)	Current - Reverse Leakage @ Vr	Voltage - DC Reverse (Vr) (Max)	Current - Average Rectified (Io)	Operating Temperature	Voltage - Forward (Vf) (Max) @ If
JANTXV1N5809US DIODE GEN PURP 100V 3A B-MELF Microchip Technology	3,635	-	RFQ	Ficha técnica	Bulk	Military, MIL-PRF-19500/477	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	60pF @ 10V, 1MHz	30 ns	5 µA @ 100 V	100 V	3A	-65°C ~ 175°C	875 mV @ 4 A
VS-87HFR40 DIODE GEN PURP 400V 85A DO203AB Vishay General Semiconductor - Diodes Division	2,566	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard, Reverse Polarity	Active	Chassis, Stud Mount	-	-	-	400 V	85A	-65°C ~ 180°C	1.2 V @ 267 A
1N4248 DIODE GEN PURP 800V 1A AXIAL Semtech Corporation	3,926	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	2 µs	1 µA @ 800 V	800 V	1A (DC)	-	1.2 V @ 1 A
VS-35APF06L-M3 RECTIFIER DIODE 35A 600V TO-247A Vishay General Semiconductor - Diodes Division	3,932	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	160 ns	100 µA @ 600 V	600 V	35A	-40°C ~ 150°C	1.46 V @ 35 A
1N5294UR-1/TR CURRENT REGULATOR Microchip Technology	3,882	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Surface Mount	-	-	-	100 V	825mA	-65°C ~ 175°C	1.2 V @ 540 mA
VS-APU6006-N3 DIODE GEN PURP 600V 30A TO247AC Vishay General Semiconductor - Diodes Division	3,612	-	RFQ	Ficha técnica	Tube	FRED Pt®	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	45 ns	30 µA @ 600 V	600 V	30A	-40°C ~ 150°C	2 V @ 30 A
JANTXV1N5811US DIODE GEN PURP 150V 3A B-MELF Microchip Technology	2,416	-	RFQ	Ficha técnica	Bulk	Military, MIL-PRF-19500/477	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	60pF @ 10V, 1MHz	30 ns	5 µA @ 150 V	150 V	3A	-65°C ~ 175°C	875 mV @ 4 A
VS-40HFL20S02 DIODE GEN PURP 200V 40A DO203AB Vishay General Semiconductor - Diodes Division	3,242	-	RFQ	Ficha técnica	Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	200 ns	100 µA @ 200 V	200 V	40A	-40°C ~ 125°C	1.95 V @ 40 A
1N4249 DIODE GEN PURP 1KV 1A AXIAL Semtech Corporation	2,964	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	2 µs	1 µA @ 1000 V	1000 V	1A (DC)	-	1.2 V @ 1 A
VS-35EPF06L-M3 RECTIFIER DIODE 35A 600V TO-247A Vishay General Semiconductor - Diodes Division	3,092	-	RFQ	Ficha técnica	Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	160 ns	100 µA @ 600 V	600 V	35A	-40°C ~ 150°C	1.46 V @ 35 A
1N5290UR-1/TR CURRENT REGULATOR Microchip Technology	2,569	-	RFQ	Ficha técnica	Tape & Reel (TR)		RoHS	-	-	Active	Surface Mount	-	-	-	-	-	-	-
DHG10IM1800UZ-TUB SONIC-1800V-10A- DPAK-HV-TUBE IXYS	3,569	-	RFQ		Tube		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	3pF @ 200V, 1MHz	260 ns	50 µA @ 1800 V	1800 V	10A	-55°C ~ 175°C	2.27 V @ 10 A
1N6547 DIODE RECT ULT FAST REC A-PKG Microchip Technology	2,138	-	RFQ		Bulk		RoHS	-	-	Active	-	-	-	-	-	-	-	-
VS-1N1190A DIODE GEN PURP 600V 40A DO203AB Vishay General Semiconductor - Diodes Division	3,596	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Chassis, Stud Mount	-	-	2.5 mA @ 600 V	600 V	40A	-65°C ~ 200°C	1.3 V @ 126 A
STPSC10H065G2-TR 650 V, 10 A HIGH SURGE SILICON C STMicroelectronics	500	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)	ECOPACK®2	RoHS	No Recovery Time > 500mA (Io)	Silicon Carbide Schottky	Active	Surface Mount	480pF @ 0V, 1MHz	0 ns	100 µA @ 650 V	650 V	10A	-40°C ~ 175°C	1.75 V @ 10 A
FDH300A DIODE GEN PURP 125V 200MA DO35 onsemi	2,867	-	RFQ	Ficha técnica	Bulk		RoHS	Small Signal =< 200mA (Io), Any Speed	Standard	Active	Through Hole	6pF @ 0V, 1MHz	-	1 nA @ 125 V	125 V	200mA	175°C (Max)	1 V @ 200 mA
HVM16 DIODE GEN PURP 16000V 350MA HVM Rectron USA	3,201	-	RFQ	Ficha técnica	Bulk		RoHS	Standard Recovery >500ns, > 200mA (Io)	Standard	Active	Through Hole	-	-	5 µA @ 16000 V	16000 V	350mA	-20°C ~ 150°C	14 V @ 350 mA
USB260-M3/52T DIODE GEN PURP 600V 2A DO214AA Vishay General Semiconductor - Diodes Division	2,078	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT)		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Surface Mount	45pF @ 4V, 1MHz	30 ns	5 µA @ 600 V	600 V	2A	-55°C ~ 150°C	1.6 V @ 2 A
DSEP15-06B DIODE GEN PURP 600V 15A TO220AC IXYS	2,787	-	RFQ	Ficha técnica	Tube	HiPerFRED™	RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Standard	Active	Through Hole	-	30 ns	100 µA @ 600 V	600 V	15A	-55°C ~ 175°C	2.52 V @ 15 A
MBRM120ET1G DIODE SCHOTTKY 20V 1A POWERMITE onsemi	236,816	-	RFQ	Ficha técnica	Tape & Reel (TR),Cut Tape (CT),Bulk		RoHS	Fast Recovery =< 500ns, > 200mA (Io)	Schottky	Active	Surface Mount	-	-	10 µA @ 20 V	20 V	1A	-65°C ~ 150°C	530 mV @ 1 A