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Diodos-Retificadores-Único
| Foto: | Número da peça do fabricante | Disponibilidade | Preço | Quantidade | Ficha técnica | Packaging | Series | RoHS | Speed | Diode Type | Part Status | Mounting Type | Capacitance @ Vr, F | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Voltage - DC Reverse (Vr) (Max) | Current - Average Rectified (Io) | Operating Temperature | Voltage - Forward (Vf) (Max) @ If |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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AS3PM-M3/87ADIODE AVALANCHE 1KV 2.1A TO277 Vishay General Semiconductor - Diodes Division |
2,219 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 37pF @ 4V, 1MHz | 1.2 µs | 10 µA @ 1000 V | 1000 V | 2.1A (DC) | -55°C ~ 175°C | 920 mV @ 1.5 A |
|
MURS460-M3/I4A 600V 50NS FSMC UF RECT SMD Vishay General Semiconductor - Diodes Division |
3,227 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 75 ns | 10 µA @ 600 V | 600 V | 2.4A | -55°C ~ 175°C | 1.25 V @ 3 A | |
|
|
EGL34CHE3_A/HDIODE GEN PURP 150V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,477 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 150 V | 150 V | 500mA | -65°C ~ 175°C | 1.25 V @ 500 mA |
|
BYT51D-TAPDIODE AVALANCHE 200V 1.5A SOD57 Vishay General Semiconductor - Diodes Division |
3,705 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 4 µs | 1 µA @ 200 V | 200 V | 1.5A | -55°C ~ 175°C | 1.1 V @ 1 A | |
|
SK83C V6GDIODE SCHOTTKY 8A 30V DO-214AB Taiwan Semiconductor Corporation |
2,092 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 30 V | 30 V | 8A | -55°C ~ 125°C | - | |
|
|
ES2G M4GDIODE GEN PURP 400V 2A DO214AA Taiwan Semiconductor Corporation |
3,345 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 20pF @ 4V, 1MHz | 35 ns | 10 µA @ 400 V | 400 V | 2A | -55°C ~ 150°C | 1.3 V @ 2 A | |
|
|
AS4PD-M3/87ADIODE AVALANCHE 200V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,450 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 200 V | 200 V | 2.4A (DC) | -55°C ~ 175°C | 962 mV @ 2 A |
|
|
EG01CDIODE GEN PURP 1KV 500MA AXIAL Sanken |
2,216 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 100 ns | 50 µA @ 1000 V | 1000 V | 500mA | -40°C ~ 150°C | 3.3 V @ 500 mA | |
|
|
EGL34DHE3_A/HDIODE GEN PURP 200V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,731 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 200 V | 200 V | 500mA | -65°C ~ 175°C | 1.25 V @ 500 mA |
|
|
BYT52A-TAPDIODE AVALANCHE 50V 1.4A SOD57 Vishay General Semiconductor - Diodes Division |
2,005 | - |
RFQ |
Ficha técnica |
Tape & Box (TB) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Avalanche | Active | Through Hole | - | 200 ns | 5 µA @ 50 V | 50 V | 1.4A | -55°C ~ 175°C | 1.3 V @ 1 A | |
|
|
SK84C V6GDIODE SCHOTTKY 8A 40V DO-214AB Taiwan Semiconductor Corporation |
2,834 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Active | Surface Mount | - | - | 500 µA @ 40 V | 40 V | 8A | -55°C ~ 125°C | - | |
|
|
ESH2B M4GDIODE GEN PURP 100V 2A DO214AA Taiwan Semiconductor Corporation |
2,156 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 25pF @ 4V, 1MHz | 20 ns | 2 µA @ 100 V | 100 V | 2A | -55°C ~ 175°C | 900 mV @ 2 A | |
|
|
AS4PG-M3/87ADIODE AVALANCHE 400V 2.4A TO277A Vishay General Semiconductor - Diodes Division |
2,275 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | eSMP® | RoHS | Standard Recovery >500ns, > 200mA (Io) | Avalanche | Active | Surface Mount | 60pF @ 4V, 1MHz | 1.8 µs | 10 µA @ 400 V | 400 V | 2.4A (DC) | -55°C ~ 175°C | 962 mV @ 2 A |
|
|
EM2DIODE GEN PURP 400V 1.2A AXIAL Sanken |
2,906 | - |
RFQ |
Ficha técnica |
Bulk | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | - | 10 µA @ 400 V | 400 V | 1.2A | -40°C ~ 150°C | 920 mV @ 1.2 A | |
|
|
EGL34FHE3_A/HDIODE GEN PURP 300V 500MA DO213 Vishay General Semiconductor - Diodes Division |
3,708 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | Automotive, AEC-Q101, Superectifier® | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | 7pF @ 4V, 1MHz | 50 ns | 5 µA @ 300 V | 300 V | 500mA | -65°C ~ 175°C | 1.35 V @ 500 mA |
|
|
GFA00DN-L079-PRDDIODE GENERAL PURPOSE onsemi |
3,022 | - |
RFQ |
Bulk | RoHS | - | - | Last Time Buy | - | - | - | - | - | - | - | - | ||
|
1N5398ST Rect, 800V, 1.5A DComponents |
2,437 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Standard Recovery >500ns, > 200mA (Io) | Standard | Active | Through Hole | - | 1.5 µs | 5 µA @ 800 V | 800 V | 1.5A | -50°C ~ 175°C | 1.3 V @ 1.5 A | |
|
USL1DUF Rect, 200V, 1.00A, 50ns DComponents |
3,119 | - |
RFQ |
Ficha técnica |
Tape & Reel (TR) | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Standard | Active | Surface Mount | - | 50 ns | 1 µA @ 200 V | 200 V | 1A | -50°C ~ 150°C | 1 V @ 1 A | |
|
|
DY3064SDIODE Diodes Incorporated |
2,285 | - |
RFQ |
Bulk | RoHS | - | - | Obsolete | - | - | - | - | - | - | - | - | ||
|
|
MBR0540T1HDIODE SCHOTTKY onsemi |
2,069 | - |
RFQ |
Bulk | RoHS | Fast Recovery =< 500ns, > 200mA (Io) | Schottky | Obsolete | Surface Mount | - | - | 20 µA @ 40 V | 40 V | 500mA | -55°C ~ 150°C | 510 mV @ 500 mA |
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